FR3127341B1 - Structure semi-conductrice pour applications optoelectroniques - Google Patents
Structure semi-conductrice pour applications optoelectroniques Download PDFInfo
- Publication number
- FR3127341B1 FR3127341B1 FR2109949A FR2109949A FR3127341B1 FR 3127341 B1 FR3127341 B1 FR 3127341B1 FR 2109949 A FR2109949 A FR 2109949A FR 2109949 A FR2109949 A FR 2109949A FR 3127341 B1 FR3127341 B1 FR 3127341B1
- Authority
- FR
- France
- Prior art keywords
- layer
- semiconductor structure
- intermediate layer
- adjacent
- optoelectronic applications
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 230000005693 optoelectronics Effects 0.000 title abstract 2
- 239000000463 material Substances 0.000 abstract 3
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0215—Bonding to the substrate
- H01S5/0216—Bonding to the substrate using an intermediate compound, e.g. a glue or solder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/1838—Reflector bonded by wafer fusion or by an intermediate compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/173—The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Abstract
L’invention concerne une structure semi-conductrice (150) pour applications optoélectroniques comprenant : - une première couche (10) en un matériau semi-conducteur cristallin, disposée sur - une couche intermédiaire (50) incluant ou adjacente à une interface de collage direct, la couche intermédiaire étant disposée sur - une deuxième couche (40) en un matériau semi-conducteur cristallin, la structure semi-conductrice (150) étant caractérisée en ce que la couche intermédiaire (50) est composée d’un matériau différent de ceux des première (10) et deuxième (40) couches et dont le coefficient d’atténuation est inférieur à 100 et l’indice de réfraction s’écarte de moins de 0,3 de l’indice de réfraction : - d’au moins une sous-couche de la première couche (10), adjacente à la couche intermédiaire (50), et - d’au moins une sous-couche de la deuxième couche (40), adjacente à la couche intermédiaire (50). Figure 2
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR2109949A FR3127341B1 (fr) | 2021-09-22 | 2021-09-22 | Structure semi-conductrice pour applications optoelectroniques |
TW111133841A TW202335385A (zh) | 2021-09-22 | 2022-09-07 | 用於光電應用之半導體結構 |
CN202280063008.5A CN117957732A (zh) | 2021-09-22 | 2022-09-08 | 用于光电应用的半导体结构 |
PCT/FR2022/051695 WO2023047037A1 (fr) | 2021-09-22 | 2022-09-08 | Structure semi-conductrice pour applications optoelectroniques |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR2109949 | 2021-09-22 | ||
FR2109949A FR3127341B1 (fr) | 2021-09-22 | 2021-09-22 | Structure semi-conductrice pour applications optoelectroniques |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3127341A1 FR3127341A1 (fr) | 2023-03-24 |
FR3127341B1 true FR3127341B1 (fr) | 2023-11-24 |
Family
ID=79019152
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR2109949A Active FR3127341B1 (fr) | 2021-09-22 | 2021-09-22 | Structure semi-conductrice pour applications optoelectroniques |
Country Status (4)
Country | Link |
---|---|
CN (1) | CN117957732A (fr) |
FR (1) | FR3127341B1 (fr) |
TW (1) | TW202335385A (fr) |
WO (1) | WO2023047037A1 (fr) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6746777B1 (en) * | 2000-05-31 | 2004-06-08 | Applied Optoelectronics, Inc. | Alternative substrates for epitaxial growth |
JP2002185080A (ja) * | 2000-12-15 | 2002-06-28 | Fujitsu Ltd | 半導体装置及びその製造方法 |
US20220416510A1 (en) | 2019-12-20 | 2022-12-29 | Sony Semiconductor Solutions Corporation | Light emitting device and method of manufacturing light emitting device |
-
2021
- 2021-09-22 FR FR2109949A patent/FR3127341B1/fr active Active
-
2022
- 2022-09-07 TW TW111133841A patent/TW202335385A/zh unknown
- 2022-09-08 WO PCT/FR2022/051695 patent/WO2023047037A1/fr active Application Filing
- 2022-09-08 CN CN202280063008.5A patent/CN117957732A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
TW202335385A (zh) | 2023-09-01 |
WO2023047037A1 (fr) | 2023-03-30 |
CN117957732A (zh) | 2024-04-30 |
FR3127341A1 (fr) | 2023-03-24 |
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Legal Events
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PLFP | Fee payment |
Year of fee payment: 2 |
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PLSC | Publication of the preliminary search report |
Effective date: 20230324 |
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PLFP | Fee payment |
Year of fee payment: 3 |