FR3117672B1 - Circuit intégré comprenant une diode à effet d'avalanche déclenché par photon individuel et procédé de fabrication correspondant - Google Patents

Circuit intégré comprenant une diode à effet d'avalanche déclenché par photon individuel et procédé de fabrication correspondant Download PDF

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Publication number
FR3117672B1
FR3117672B1 FR2012999A FR2012999A FR3117672B1 FR 3117672 B1 FR3117672 B1 FR 3117672B1 FR 2012999 A FR2012999 A FR 2012999A FR 2012999 A FR2012999 A FR 2012999A FR 3117672 B1 FR3117672 B1 FR 3117672B1
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FR
France
Prior art keywords
doped region
integrated circuit
dopant
type
avalanche diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2012999A
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English (en)
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FR3117672A1 (fr
Inventor
Denis Rideau
Dominique Golanski
Alexandre Lopez
Gabriel Mugny
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
STMicroelectronics Research and Development Ltd
Original Assignee
STMicroelectronics Crolles 2 SAS
STMicroelectronics Research and Development Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by STMicroelectronics Crolles 2 SAS, STMicroelectronics Research and Development Ltd filed Critical STMicroelectronics Crolles 2 SAS
Priority to FR2012999A priority Critical patent/FR3117672B1/fr
Priority to US17/546,503 priority patent/US11949035B2/en
Publication of FR3117672A1 publication Critical patent/FR3117672A1/fr
Application granted granted Critical
Publication of FR3117672B1 publication Critical patent/FR3117672B1/fr
Priority to US18/588,656 priority patent/US20240194815A1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Light Receiving Elements (AREA)

Abstract

Un circuit intégré comprend au moins une diode à effet d'avalanche déclenché par photon individuel « SPAD » (SPD) comportant une jonction PN, dans un caisson semiconducteur (P-) dopé avec un premier type de dopant, entre une première région dopée (PAN) avec le premier type de dopant et une deuxième région dopée (N+) avec le deuxième type de dopant opposé au premier type de dopant. La première région dopée (PAN) est façonnée de manière à incorporer des variations locales de la concentration des dopants, adaptées pour engendrer une variation monotone du potentiel électrostatique (Pot) entre la première région dopée (PAN) et le caisson semiconducteur (P-), lorsque la tension entre la deuxième région dopée (N+) et le caisson semiconducteur (P-) est supérieure ou égale au niveau de la tension de claquage (Vb) de la jonction PN. Figure de l’abrégé : figure 2A.
FR2012999A 2020-12-10 2020-12-10 Circuit intégré comprenant une diode à effet d'avalanche déclenché par photon individuel et procédé de fabrication correspondant Active FR3117672B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR2012999A FR3117672B1 (fr) 2020-12-10 2020-12-10 Circuit intégré comprenant une diode à effet d'avalanche déclenché par photon individuel et procédé de fabrication correspondant
US17/546,503 US11949035B2 (en) 2020-12-10 2021-12-09 Integrated circuit comprising a single photon avalanche diode and corresponding manufacturing method
US18/588,656 US20240194815A1 (en) 2020-12-10 2024-02-27 Integrated circuit comprising a single photon avalanche diode and corresponding manufacturing method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2012999 2020-12-10
FR2012999A FR3117672B1 (fr) 2020-12-10 2020-12-10 Circuit intégré comprenant une diode à effet d'avalanche déclenché par photon individuel et procédé de fabrication correspondant

Publications (2)

Publication Number Publication Date
FR3117672A1 FR3117672A1 (fr) 2022-06-17
FR3117672B1 true FR3117672B1 (fr) 2023-12-08

Family

ID=74554046

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2012999A Active FR3117672B1 (fr) 2020-12-10 2020-12-10 Circuit intégré comprenant une diode à effet d'avalanche déclenché par photon individuel et procédé de fabrication correspondant

Country Status (2)

Country Link
US (2) US11949035B2 (fr)
FR (1) FR3117672B1 (fr)

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8093624B1 (en) * 2006-02-15 2012-01-10 Massachusetts Institute Of Technology High fill-factor avalanche photodiode
US8259293B2 (en) * 2007-03-15 2012-09-04 Johns Hopkins University Deep submicron and nano CMOS single photon photodetector pixel with event based circuits for readout data-rate reduction communication system
DE102007037020B3 (de) * 2007-08-06 2008-08-21 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Avalanche-Photodiode
US7898001B2 (en) * 2008-12-03 2011-03-01 Stmicroelectronics (Research & Development) Limited Single photon detector and associated methods for making the same
US20100159632A1 (en) * 2008-12-23 2010-06-24 Omnivision Technologies, Inc. Technique for fabrication of backside illuminated image sensor
JP6017916B2 (ja) * 2012-10-16 2016-11-02 株式会社豊田中央研究所 光検出器
JP6090060B2 (ja) * 2013-08-23 2017-03-08 株式会社豊田中央研究所 シングルフォトンアバランシェダイオード
FR3041817B1 (fr) * 2015-09-30 2017-10-13 Commissariat Energie Atomique Photodiode de type spad
EP3477710B1 (fr) * 2017-10-26 2023-03-29 STMicroelectronics (Research & Development) Limited Photodiode à avalanche et procédé de fabrication de photodiode à avalanche
JP7242234B2 (ja) * 2018-09-28 2023-03-20 キヤノン株式会社 光検出装置、光検出システム
FR3114441B1 (fr) * 2020-09-24 2022-10-07 Commissariat Energie Atomique Photodiode de type spad
FR3121282B1 (fr) * 2021-03-25 2023-12-22 St Microelectronics Crolles 2 Sas Photodiode SPAD
KR20230032568A (ko) * 2021-08-31 2023-03-07 주식회사 디비하이텍 Spad 구조

Also Published As

Publication number Publication date
US11949035B2 (en) 2024-04-02
US20220190184A1 (en) 2022-06-16
FR3117672A1 (fr) 2022-06-17
US20240194815A1 (en) 2024-06-13

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