FR3109469B1 - Procédé de fabrication d’un dispositif émetteur de rayonnement - Google Patents
Procédé de fabrication d’un dispositif émetteur de rayonnement Download PDFInfo
- Publication number
- FR3109469B1 FR3109469B1 FR2003779A FR2003779A FR3109469B1 FR 3109469 B1 FR3109469 B1 FR 3109469B1 FR 2003779 A FR2003779 A FR 2003779A FR 2003779 A FR2003779 A FR 2003779A FR 3109469 B1 FR3109469 B1 FR 3109469B1
- Authority
- FR
- France
- Prior art keywords
- face
- manufacturing
- emitting device
- substrate
- radiation emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 230000005855 radiation Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- 238000000034 method Methods 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000002513 implantation Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
- H01L33/0012—Devices characterised by their operation having p-n or hi-lo junctions p-i-n devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR2003779A FR3109469B1 (fr) | 2020-04-15 | 2020-04-15 | Procédé de fabrication d’un dispositif émetteur de rayonnement |
EP21717112.3A EP4136681A1 (fr) | 2020-04-15 | 2021-04-13 | Procédé de fabrication d'un dispositif émetteur de rayonnement |
US17/996,240 US20230197885A1 (en) | 2020-04-15 | 2021-04-13 | Method for manufacturing a device for emitting radiation |
PCT/EP2021/059580 WO2021209460A1 (fr) | 2020-04-15 | 2021-04-13 | Procédé de fabrication d'un dispositif émetteur de rayonnement |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR2003779A FR3109469B1 (fr) | 2020-04-15 | 2020-04-15 | Procédé de fabrication d’un dispositif émetteur de rayonnement |
FR2003779 | 2020-04-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3109469A1 FR3109469A1 (fr) | 2021-10-22 |
FR3109469B1 true FR3109469B1 (fr) | 2022-04-29 |
Family
ID=72178663
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR2003779A Active FR3109469B1 (fr) | 2020-04-15 | 2020-04-15 | Procédé de fabrication d’un dispositif émetteur de rayonnement |
Country Status (4)
Country | Link |
---|---|
US (1) | US20230197885A1 (fr) |
EP (1) | EP4136681A1 (fr) |
FR (1) | FR3109469B1 (fr) |
WO (1) | WO2021209460A1 (fr) |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI442456B (zh) * | 2004-08-31 | 2014-06-21 | Sophia School Corp | 發光元件 |
DE102004062290A1 (de) * | 2004-12-23 | 2006-07-06 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterchips |
DE102005052357A1 (de) * | 2005-09-01 | 2007-03-15 | Osram Opto Semiconductors Gmbh | Verfahren zum lateralen Zertrennen eines Halbleiterwafers und optoelektronisches Bauelement |
DE102005052358A1 (de) * | 2005-09-01 | 2007-03-15 | Osram Opto Semiconductors Gmbh | Verfahren zum lateralen Zertrennen eines Halbleiterwafers und optoelektronisches Bauelement |
US8163581B1 (en) * | 2010-10-13 | 2012-04-24 | Monolith IC 3D | Semiconductor and optoelectronic devices |
US8785294B2 (en) * | 2012-07-26 | 2014-07-22 | Gtat Corporation | Silicon carbide lamina |
CN110838463A (zh) * | 2018-08-17 | 2020-02-25 | 胡兵 | 一种半导体衬底、将衬底层与其上功能层分离的方法 |
CN107706086B (zh) * | 2017-07-31 | 2020-05-01 | 朱元勋 | 一种碳化硅衬底垂直结构簿膜电子器件及其制作方法 |
-
2020
- 2020-04-15 FR FR2003779A patent/FR3109469B1/fr active Active
-
2021
- 2021-04-13 WO PCT/EP2021/059580 patent/WO2021209460A1/fr unknown
- 2021-04-13 EP EP21717112.3A patent/EP4136681A1/fr active Pending
- 2021-04-13 US US17/996,240 patent/US20230197885A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
US20230197885A1 (en) | 2023-06-22 |
EP4136681A1 (fr) | 2023-02-22 |
WO2021209460A1 (fr) | 2021-10-21 |
FR3109469A1 (fr) | 2021-10-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 2 |
|
PLSC | Publication of the preliminary search report |
Effective date: 20211022 |
|
PLFP | Fee payment |
Year of fee payment: 3 |
|
TQ | Partial transmission of property |
Owner name: UNIVERSITE GRENOBLE ALPES, FR Effective date: 20230227 Owner name: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERG, FR Effective date: 20230227 Owner name: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, FR Effective date: 20230227 |
|
PLFP | Fee payment |
Year of fee payment: 4 |
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PLFP | Fee payment |
Year of fee payment: 5 |