FR3099636B1 - Système et procédé de traitement par laser - Google Patents
Système et procédé de traitement par laser Download PDFInfo
- Publication number
- FR3099636B1 FR3099636B1 FR1908743A FR1908743A FR3099636B1 FR 3099636 B1 FR3099636 B1 FR 3099636B1 FR 1908743 A FR1908743 A FR 1908743A FR 1908743 A FR1908743 A FR 1908743A FR 3099636 B1 FR3099636 B1 FR 3099636B1
- Authority
- FR
- France
- Prior art keywords
- substrate
- region
- laser beam
- sum
- optical device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/02—Simple or compound lenses with non-spherical faces
- G02B3/04—Simple or compound lenses with non-spherical faces with continuous faces that are rotationally symmetrical but deviate from a true sphere, e.g. so called "aspheric" lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Laser Beam Processing (AREA)
Abstract
Système et procédé de traitement par laser La présente description concerne un système (10) pour le traitement d'une région (28) d'un objet (20) adjacente à un substrat (22). Le système comprend une source (20) d'un faisceau laser incident (16) fournissant un faisceau laser focalisé (18). La longueur d'onde du faisceau laser incident est supérieure à la somme de 500 nm et de la longueur d'onde associée à l'écart de bandes du matériau composant le substrat et inférieure à la somme de 2500 nm et de cette longueur d'onde. Le système comprend un dispositif optique associant une ouverture numérique supérieure à 0,3 et des moyens de correction des aberrations sphériques apparaissant lors de la traversée du substrat pour une épaisseur donnée du substrat et une distance donnée entre le substrat et le dispositif optique. Le traitement s'effectuant sur la région au travers du substrat (22), et comprenant la modification physique, chimique ou physico-chimique ou l'ablation de la région. Figure pour l'abrégé : Fig. 1
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1908743A FR3099636B1 (fr) | 2019-07-31 | 2019-07-31 | Système et procédé de traitement par laser |
US17/630,876 US20220266384A1 (en) | 2019-07-31 | 2020-07-21 | Laser treatment system and method |
EP20740344.5A EP4003635A1 (fr) | 2019-07-31 | 2020-07-21 | Systeme et procede de traitement par laser |
KR1020227005484A KR20220038408A (ko) | 2019-07-31 | 2020-07-21 | 레이저 처리 시스템 및 방법 |
PCT/EP2020/070502 WO2021018661A1 (fr) | 2019-07-31 | 2020-07-21 | Systeme et procede de traitement par laser |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1908743 | 2019-07-31 | ||
FR1908743A FR3099636B1 (fr) | 2019-07-31 | 2019-07-31 | Système et procédé de traitement par laser |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3099636A1 FR3099636A1 (fr) | 2021-02-05 |
FR3099636B1 true FR3099636B1 (fr) | 2021-08-06 |
Family
ID=68807012
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1908743A Active FR3099636B1 (fr) | 2019-07-31 | 2019-07-31 | Système et procédé de traitement par laser |
Country Status (5)
Country | Link |
---|---|
US (1) | US20220266384A1 (fr) |
EP (1) | EP4003635A1 (fr) |
KR (1) | KR20220038408A (fr) |
FR (1) | FR3099636B1 (fr) |
WO (1) | WO2021018661A1 (fr) |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5265114C1 (en) * | 1992-09-10 | 2001-08-21 | Electro Scient Ind Inc | System and method for selectively laser processing a target structure of one or more materials of a multimaterial multilayer device |
JP4754801B2 (ja) * | 2004-10-13 | 2011-08-24 | 浜松ホトニクス株式会社 | レーザ加工方法 |
ITTO20110327A1 (it) * | 2011-04-08 | 2012-10-09 | Osai A S S R L | Metodo di taglio laser intramateriale con profondita' di campo estesa |
US9895767B2 (en) * | 2011-05-10 | 2018-02-20 | The United States Of America, As Represented By The Secretary Of The Navy | Laser induced extra-planar elicitation |
TWI576190B (zh) * | 2013-08-01 | 2017-04-01 | Ibm | 使用中段波長紅外光輻射燒蝕之晶圓剝離 |
JP5941113B2 (ja) * | 2014-09-30 | 2016-06-29 | ファナック株式会社 | 集光径を拡大できるレーザ加工装置 |
US10439101B2 (en) | 2017-08-18 | 2019-10-08 | Intel Corporation | Micro light-emitting diode (LED) elements and display |
-
2019
- 2019-07-31 FR FR1908743A patent/FR3099636B1/fr active Active
-
2020
- 2020-07-21 US US17/630,876 patent/US20220266384A1/en active Pending
- 2020-07-21 EP EP20740344.5A patent/EP4003635A1/fr active Pending
- 2020-07-21 KR KR1020227005484A patent/KR20220038408A/ko active Search and Examination
- 2020-07-21 WO PCT/EP2020/070502 patent/WO2021018661A1/fr unknown
Also Published As
Publication number | Publication date |
---|---|
EP4003635A1 (fr) | 2022-06-01 |
KR20220038408A (ko) | 2022-03-28 |
FR3099636A1 (fr) | 2021-02-05 |
US20220266384A1 (en) | 2022-08-25 |
WO2021018661A1 (fr) | 2021-02-04 |
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Year of fee payment: 2 |
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