FR3075671B1 - CRUCIBLE FOR DIRECTED SOLIDIFICATION OF AN INGOT - Google Patents
CRUCIBLE FOR DIRECTED SOLIDIFICATION OF AN INGOT Download PDFInfo
- Publication number
- FR3075671B1 FR3075671B1 FR1762764A FR1762764A FR3075671B1 FR 3075671 B1 FR3075671 B1 FR 3075671B1 FR 1762764 A FR1762764 A FR 1762764A FR 1762764 A FR1762764 A FR 1762764A FR 3075671 B1 FR3075671 B1 FR 3075671B1
- Authority
- FR
- France
- Prior art keywords
- mold
- side wall
- ingot
- axial direction
- crucible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000008023 solidification Effects 0.000 title abstract 2
- 238000007711 solidification Methods 0.000 title abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D27/00—Treating the metal in the mould while it is molten or ductile ; Pressure or vacuum casting
- B22D27/04—Influencing the temperature of the metal, e.g. by heating or cooling the mould
- B22D27/045—Directionally solidified castings
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/006—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/007—Mechanisms for moving either the charge or the heater
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Creuset pour la solidification dirigée d'un lingot en un matériau de lingot choisi parmi le silicium, le germanium et leurs mélanges, comportant : - un moule comportant une paroi de fond de moule et une paroi latérale de moule s'étendant depuis la paroi de fond de moule le long d'une direction axiale, la paroi de fond de moule et la paroi latérale de moule définissant ensemble une cavité pour contenir le matériau de lingot en fusion, et - une structure de maintien thermiquement isolante et creuse s'étendant selon la direction axiale et comportant une paroi latérale de structure présentant une résistance thermique surfacique radiale supérieure à la résistance thermique surfacique radiale Rthpm de la paroi latérale de moule, la structure de maintien ceinturant la paroi latérale de moule autour de la direction axiale.Crucible for the directed solidification of an ingot made of an ingot material chosen from silicon, germanium and their mixtures, comprising: - a mold comprising a bottom wall of the mold and a side wall of the mold extending from the wall of mold bottom along an axial direction, the mold bottom wall and the mold side wall together defining a cavity for containing the molten ingot material, and - a thermally insulating and hollow holding structure extending along the axial direction and comprising a structural side wall having a radial surface thermal resistance greater than the radial surface thermal resistance Rthpm of the mold side wall, the support structure encircling the mold side wall around the axial direction.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1762764A FR3075671B1 (en) | 2017-12-21 | 2017-12-21 | CRUCIBLE FOR DIRECTED SOLIDIFICATION OF AN INGOT |
PCT/EP2018/086165 WO2019122108A1 (en) | 2017-12-21 | 2018-12-20 | Crucible for directed solidification of an ingot |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1762764A FR3075671B1 (en) | 2017-12-21 | 2017-12-21 | CRUCIBLE FOR DIRECTED SOLIDIFICATION OF AN INGOT |
FR1762764 | 2017-12-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3075671A1 FR3075671A1 (en) | 2019-06-28 |
FR3075671B1 true FR3075671B1 (en) | 2020-12-18 |
Family
ID=62528486
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1762764A Active FR3075671B1 (en) | 2017-12-21 | 2017-12-21 | CRUCIBLE FOR DIRECTED SOLIDIFICATION OF AN INGOT |
Country Status (2)
Country | Link |
---|---|
FR (1) | FR3075671B1 (en) |
WO (1) | WO2019122108A1 (en) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6824609B2 (en) * | 2001-08-28 | 2004-11-30 | Canon Kabushiki Kaisha | Liquid phase growth method and liquid phase growth apparatus |
JP5286589B2 (en) * | 2008-05-01 | 2013-09-11 | イビデン株式会社 | Crucible holding member and manufacturing method thereof |
CN102179506A (en) * | 2011-04-07 | 2011-09-14 | 西北工业大学 | Compound heat insulation baffle used for directional solidification |
WO2016089369A1 (en) * | 2014-12-02 | 2016-06-09 | Halliburton Energy Services, Inc. | Steam-blocking cooling systems that help facilitate directional solidification |
-
2017
- 2017-12-21 FR FR1762764A patent/FR3075671B1/en active Active
-
2018
- 2018-12-20 WO PCT/EP2018/086165 patent/WO2019122108A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2019122108A1 (en) | 2019-06-27 |
FR3075671A1 (en) | 2019-06-28 |
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Legal Events
Date | Code | Title | Description |
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PLFP | Fee payment |
Year of fee payment: 2 |
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PLSC | Publication of the preliminary search report |
Effective date: 20190628 |
|
PLFP | Fee payment |
Year of fee payment: 3 |
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PLFP | Fee payment |
Year of fee payment: 4 |
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PLFP | Fee payment |
Year of fee payment: 5 |
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PLFP | Fee payment |
Year of fee payment: 6 |
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PLFP | Fee payment |
Year of fee payment: 7 |