FR3072494B1 - Dispositif et procede de controle des cycles de rafraichissement de donnees dans des memoires non-volatiles reprogrammables - Google Patents
Dispositif et procede de controle des cycles de rafraichissement de donnees dans des memoires non-volatiles reprogrammables Download PDFInfo
- Publication number
- FR3072494B1 FR3072494B1 FR1759765A FR1759765A FR3072494B1 FR 3072494 B1 FR3072494 B1 FR 3072494B1 FR 1759765 A FR1759765 A FR 1759765A FR 1759765 A FR1759765 A FR 1759765A FR 3072494 B1 FR3072494 B1 FR 3072494B1
- Authority
- FR
- France
- Prior art keywords
- volatile memories
- retention
- controlling data
- page
- cooling cycles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
- G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/004—Error avoidance
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
- G06F11/1048—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using arrangements adapted for a specific error detection or correction feature
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0033—Disturbance prevention or evaluation; Refreshing of disturbed memory data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0035—Evaluating degradation, retention or wearout, e.g. by counting writing cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
- G11C16/3495—Circuits or methods to detect or delay wearout of nonvolatile EPROM or EEPROM memory devices, e.g. by counting numbers of erase or reprogram cycles, by using multiple memory areas serially or cyclically
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/52—Protection of memory contents; Detection of errors in memory contents
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/008—Reliability or availability analysis
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C2029/0409—Online test
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C2029/0411—Online error correction
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/38—Response verification devices
- G11C29/42—Response verification devices using error correcting codes [ECC] or parity check
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C29/50016—Marginal testing, e.g. race, voltage or current testing of retention
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Quality & Reliability (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Read Only Memory (AREA)
Abstract
L'invention porte sur un procédé pour contrôler le rafraichissement de données dans des mémoires non-volatiles reprogrammables, ayant pluralité de pages mémoire pour stocker des données. Le procédé opère selon les étapes consistant à : - calculer le nombre d'erreurs de rétention et d'erreurs de non-rétention dans au moins une page mémoire; - calculer l'âge de rétention de ladite au moins une page mémoire ; - estimer le temps de rétention restant pour ladite page en fonction des paramètres précédemment calculés ; et - déterminer si la page doit être rafraichie ou non en fonction de la valeur estimée du temps de rétention restant.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1759765A FR3072494B1 (fr) | 2017-10-18 | 2017-10-18 | Dispositif et procede de controle des cycles de rafraichissement de donnees dans des memoires non-volatiles reprogrammables |
EP18782028.7A EP3698364A1 (fr) | 2017-10-18 | 2018-10-01 | Dispositif et procede de controle des cycles de rafraichissement de donnees dans des memoires non-volatiles reprogrammables |
US16/756,837 US10990477B2 (en) | 2017-10-18 | 2018-10-01 | Device and method for controlling the data refresh cycles in reprogrammable non-volatile memories |
PCT/EP2018/076565 WO2019076613A1 (fr) | 2017-10-18 | 2018-10-01 | Dispositif et procede de controle des cycles de rafraichissement de donnees dans des memoires non-volatiles reprogrammables |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1759765A FR3072494B1 (fr) | 2017-10-18 | 2017-10-18 | Dispositif et procede de controle des cycles de rafraichissement de donnees dans des memoires non-volatiles reprogrammables |
FR1759765 | 2017-10-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3072494A1 FR3072494A1 (fr) | 2019-04-19 |
FR3072494B1 true FR3072494B1 (fr) | 2020-06-19 |
Family
ID=61599273
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1759765A Expired - Fee Related FR3072494B1 (fr) | 2017-10-18 | 2017-10-18 | Dispositif et procede de controle des cycles de rafraichissement de donnees dans des memoires non-volatiles reprogrammables |
Country Status (4)
Country | Link |
---|---|
US (1) | US10990477B2 (fr) |
EP (1) | EP3698364A1 (fr) |
FR (1) | FR3072494B1 (fr) |
WO (1) | WO2019076613A1 (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110689914B (zh) * | 2019-09-06 | 2021-08-10 | 苏州浪潮智能科技有限公司 | 一种固态硬盘的读纠错方法、装置、设备及存储介质 |
US11157379B2 (en) | 2019-10-30 | 2021-10-26 | International Business Machines Corporation | Managing blocks of memory based on block health using hybrid controllers |
TWI764856B (zh) * | 2021-12-13 | 2022-05-11 | 慧榮科技股份有限公司 | 記憶體控制器與資料處理方法 |
CN116469442B (zh) * | 2022-03-23 | 2024-05-03 | 武汉置富半导体技术有限公司 | 芯片数据保持时间的预测方法、装置及存储介质 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8938655B2 (en) * | 2007-12-20 | 2015-01-20 | Spansion Llc | Extending flash memory data retension via rewrite refresh |
US9330767B1 (en) * | 2009-08-26 | 2016-05-03 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Flash memory module and method for programming a page of flash memory cells |
US8661184B2 (en) * | 2010-01-27 | 2014-02-25 | Fusion-Io, Inc. | Managing non-volatile media |
CN105531768B (zh) * | 2013-08-30 | 2019-12-31 | 英派尔科技开发有限公司 | 闪存中功率消耗的减小 |
US9959059B2 (en) * | 2014-10-20 | 2018-05-01 | Sandisk Technologies Llc | Storage error management |
US9792071B2 (en) * | 2014-12-22 | 2017-10-17 | Sandisk Technologies Llc | End of life prediction to reduce retention triggered operations |
-
2017
- 2017-10-18 FR FR1759765A patent/FR3072494B1/fr not_active Expired - Fee Related
-
2018
- 2018-10-01 WO PCT/EP2018/076565 patent/WO2019076613A1/fr unknown
- 2018-10-01 US US16/756,837 patent/US10990477B2/en active Active
- 2018-10-01 EP EP18782028.7A patent/EP3698364A1/fr not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
WO2019076613A1 (fr) | 2019-04-25 |
US10990477B2 (en) | 2021-04-27 |
EP3698364A1 (fr) | 2020-08-26 |
FR3072494A1 (fr) | 2019-04-19 |
US20200264952A1 (en) | 2020-08-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLSC | Publication of the preliminary search report |
Effective date: 20190419 |
|
PLFP | Fee payment |
Year of fee payment: 3 |
|
PLFP | Fee payment |
Year of fee payment: 4 |
|
PLFP | Fee payment |
Year of fee payment: 5 |
|
ST | Notification of lapse |
Effective date: 20230606 |