FR3071492B1 - MICRO-DEVICE INCLUDING AN ELEMENT PROTECTED AGAINST HF ENGRAVING AND SHAPED AS A MATERIAL INCLUDING A SEMICONDUCTOR AND A METAL - Google Patents
MICRO-DEVICE INCLUDING AN ELEMENT PROTECTED AGAINST HF ENGRAVING AND SHAPED AS A MATERIAL INCLUDING A SEMICONDUCTOR AND A METAL Download PDFInfo
- Publication number
- FR3071492B1 FR3071492B1 FR1758848A FR1758848A FR3071492B1 FR 3071492 B1 FR3071492 B1 FR 3071492B1 FR 1758848 A FR1758848 A FR 1758848A FR 1758848 A FR1758848 A FR 1758848A FR 3071492 B1 FR3071492 B1 FR 3071492B1
- Authority
- FR
- France
- Prior art keywords
- semiconductor
- micro
- metal
- engraving
- shaped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
- B81C1/00595—Control etch selectivity
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00777—Preserve existing structures from alteration, e.g. temporary protection during manufacturing
- B81C1/00785—Avoid chemical alteration, e.g. contamination, oxidation or unwanted etching
- B81C1/00801—Avoid alteration of functional structures by etching, e.g. using a passivation layer or an etch stop layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0097—Devices comprising flexible or deformable elements not provided for in groups B81B3/0002 - B81B3/0094
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0136—Comb structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/01—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS
- B81B2207/015—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS the micromechanical device and the control or processing electronics being integrated on the same substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
- B81C1/00468—Releasing structures
- B81C1/00476—Releasing structures removing a sacrificial layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0102—Surface micromachining
- B81C2201/0105—Sacrificial layer
- B81C2201/0109—Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/013—Etching
- B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/013—Etching
- B81C2201/0133—Wet etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/013—Etching
- B81C2201/0135—Controlling etch progression
- B81C2201/014—Controlling etch progression by depositing an etch stop layer, e.g. silicon nitride, silicon oxide, metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
- B81C2201/0181—Physical Vapour Deposition [PVD], i.e. evaporation, sputtering, ion plating or plasma assisted deposition, ion cluster beam technology
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Semiconductor Integrated Circuits (AREA)
- Micromachines (AREA)
- Bipolar Transistors (AREA)
Abstract
Micro-dispositif (100) comportant au moins un premier élément (101) comprenant au moins : - une portion de matériau (106) correspondant à un composé d'au moins un semi-conducteur et d'au moins un métal, - des première et deuxième couches de protection (108, 110) recouvrant chacune une de deux faces opposées de ladite portion de matériau, telles que la première couche de protection comprenne au moins un premier matériau apte à résister à une gravure HF, que la deuxième couche de protection comprenne au moins un deuxième matériau apte à résister à la gravure HF, et qu'au moins l'un des premier et deuxième matériaux aptes à résister à la gravure HF comporte le semi-conducteur.Micro-device (100) comprising at least a first element (101) comprising at least: - a portion of material (106) corresponding to a compound of at least one semiconductor and at least one metal, - first and second protective layers (108, 110) each covering one of two opposite faces of said portion of material, such that the first protective layer comprises at least a first material capable of withstanding HF etching, than the second protective layer comprises at least one second material capable of resisting HF etching, and that at least one of the first and second materials capable of resisting HF etching comprises the semiconductor.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1758848A FR3071492B1 (en) | 2017-09-25 | 2017-09-25 | MICRO-DEVICE INCLUDING AN ELEMENT PROTECTED AGAINST HF ENGRAVING AND SHAPED AS A MATERIAL INCLUDING A SEMICONDUCTOR AND A METAL |
EP18196058.4A EP3459907B1 (en) | 2017-09-25 | 2018-09-21 | Microdevice comprising an element protected against hf etching and formed from a material comprising a semiconductor and a metal |
US16/138,061 US11027969B2 (en) | 2017-09-25 | 2018-09-21 | Micro-device having a metal-semiconductor compound layer protected against HF etching and method for making the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1758848A FR3071492B1 (en) | 2017-09-25 | 2017-09-25 | MICRO-DEVICE INCLUDING AN ELEMENT PROTECTED AGAINST HF ENGRAVING AND SHAPED AS A MATERIAL INCLUDING A SEMICONDUCTOR AND A METAL |
FR1758848 | 2017-09-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3071492A1 FR3071492A1 (en) | 2019-03-29 |
FR3071492B1 true FR3071492B1 (en) | 2021-07-09 |
Family
ID=60627795
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1758848A Expired - Fee Related FR3071492B1 (en) | 2017-09-25 | 2017-09-25 | MICRO-DEVICE INCLUDING AN ELEMENT PROTECTED AGAINST HF ENGRAVING AND SHAPED AS A MATERIAL INCLUDING A SEMICONDUCTOR AND A METAL |
Country Status (3)
Country | Link |
---|---|
US (1) | US11027969B2 (en) |
EP (1) | EP3459907B1 (en) |
FR (1) | FR3071492B1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3101726B1 (en) * | 2019-10-04 | 2021-10-01 | Commissariat Energie Atomique | manufacturing process of an electronic device |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69734280D1 (en) * | 1997-07-10 | 2006-02-09 | St Microelectronics Srl | Method for producing highly sensitive, capacitive and resonant integrated sensors, in particular accelerometers and gyros, and sensors manufactured therewith |
US6020272A (en) * | 1998-10-08 | 2000-02-01 | Sandia Corporation | Method for forming suspended micromechanical structures |
DE10152254A1 (en) * | 2001-10-20 | 2003-04-30 | Bosch Gmbh Robert | Micromechanical component and corresponding manufacturing method |
JP4724488B2 (en) * | 2005-02-25 | 2011-07-13 | 日立オートモティブシステムズ株式会社 | Integrated microelectromechanical system |
US7538401B2 (en) * | 2005-05-03 | 2009-05-26 | Rosemount Aerospace Inc. | Transducer for use in harsh environments |
US7816166B1 (en) * | 2007-03-09 | 2010-10-19 | Silicon Labs Sc, Inc. | Method to form a MEMS structure having a suspended portion |
US8318606B2 (en) * | 2009-08-25 | 2012-11-27 | Lsi Corporation | Dielectric etching |
US9586811B2 (en) * | 2011-06-10 | 2017-03-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor devices with moving members and methods for making the same |
US8440523B1 (en) * | 2011-12-07 | 2013-05-14 | International Business Machines Corporation | Micromechanical device and methods to fabricate same using hard mask resistant to structure release etch |
US9340412B2 (en) * | 2014-07-28 | 2016-05-17 | Ams International Ag | Suspended membrane for capacitive pressure sensor |
-
2017
- 2017-09-25 FR FR1758848A patent/FR3071492B1/en not_active Expired - Fee Related
-
2018
- 2018-09-21 EP EP18196058.4A patent/EP3459907B1/en active Active
- 2018-09-21 US US16/138,061 patent/US11027969B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20190092632A1 (en) | 2019-03-28 |
EP3459907A1 (en) | 2019-03-27 |
US11027969B2 (en) | 2021-06-08 |
FR3071492A1 (en) | 2019-03-29 |
EP3459907B1 (en) | 2020-08-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLSC | Publication of the preliminary search report |
Effective date: 20190329 |
|
PLFP | Fee payment |
Year of fee payment: 3 |
|
PLFP | Fee payment |
Year of fee payment: 4 |
|
ST | Notification of lapse |
Effective date: 20220505 |