FR3049766B1 - Dispositif de protection contre des decharges electrostatiques a seuil de declenchement ajustable - Google Patents
Dispositif de protection contre des decharges electrostatiques a seuil de declenchement ajustable Download PDFInfo
- Publication number
- FR3049766B1 FR3049766B1 FR1652712A FR1652712A FR3049766B1 FR 3049766 B1 FR3049766 B1 FR 3049766B1 FR 1652712 A FR1652712 A FR 1652712A FR 1652712 A FR1652712 A FR 1652712A FR 3049766 B1 FR3049766 B1 FR 3049766B1
- Authority
- FR
- France
- Prior art keywords
- protection against
- against electrostatic
- electrostatic discharges
- trigger threshold
- adjustable trigger
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000003990 capacitor Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0676—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type comprising combinations of diodes, or capacitors or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Emergency Protection Circuit Devices (AREA)
Abstract
L'invention concerne un dispositif (210) de protection contre des décharges électrostatiques, comportant : des première (211) et deuxième (212) diodes montées en série entre des première (N1) et deuxième (N2) bornes de connexion du dispositif ; une troisième borne (N3) de connexion reliée au point milieu entre les première (211) et deuxième (212) diodes ; et un condensateur (213) monté en parallèle des première (211) et deuxième (212) diodes, entre les première (N1) et deuxième (N2) bornes.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1652712A FR3049766B1 (fr) | 2016-03-30 | 2016-03-30 | Dispositif de protection contre des decharges electrostatiques a seuil de declenchement ajustable |
US15/252,964 US9793257B1 (en) | 2016-03-30 | 2016-08-31 | Electrostatic discharge protection device having an adjustable triggering threshold |
CN201621089402.4U CN206516631U (zh) | 2016-03-30 | 2016-09-21 | 防止静电放电的保护装置以及电子*** |
CN201610860938.XA CN107293539B (zh) | 2016-03-30 | 2016-09-21 | 具有可调节的触发阈值的静电放电保护装置 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1652712A FR3049766B1 (fr) | 2016-03-30 | 2016-03-30 | Dispositif de protection contre des decharges electrostatiques a seuil de declenchement ajustable |
FR1652712 | 2016-03-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3049766A1 FR3049766A1 (fr) | 2017-10-06 |
FR3049766B1 true FR3049766B1 (fr) | 2018-11-16 |
Family
ID=55953296
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1652712A Expired - Fee Related FR3049766B1 (fr) | 2016-03-30 | 2016-03-30 | Dispositif de protection contre des decharges electrostatiques a seuil de declenchement ajustable |
Country Status (3)
Country | Link |
---|---|
US (1) | US9793257B1 (fr) |
CN (2) | CN107293539B (fr) |
FR (1) | FR3049766B1 (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI655818B (zh) * | 2018-07-27 | 2019-04-01 | 智原科技股份有限公司 | 積體電路的靜電放電防護裝置 |
US11801168B2 (en) | 2019-11-15 | 2023-10-31 | The Procter And Gamble Company | Tape-type absorbent article with belt structure |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5189588A (en) * | 1989-03-15 | 1993-02-23 | Matsushita Electric Industrial Co., Ltd. | Surge protection apparatus |
US20020180552A1 (en) * | 2001-05-29 | 2002-12-05 | Bennett Jeffrey H. | Input power limiter for a microwave receiver |
US8183593B2 (en) * | 2009-10-16 | 2012-05-22 | Oracle America, Inc. | Semiconductor die with integrated electro-static discharge device |
US20130050884A1 (en) * | 2011-08-23 | 2013-02-28 | Himax Technologies Limited | Electrostatic discharge (esd) protection element and esd circuit thereof |
FR2994335A1 (fr) * | 2012-08-01 | 2014-02-07 | St Microelectronics Tours Sas | Dispositif de protection d'un circuit integre contre des surtensions |
-
2016
- 2016-03-30 FR FR1652712A patent/FR3049766B1/fr not_active Expired - Fee Related
- 2016-08-31 US US15/252,964 patent/US9793257B1/en active Active
- 2016-09-21 CN CN201610860938.XA patent/CN107293539B/zh active Active
- 2016-09-21 CN CN201621089402.4U patent/CN206516631U/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN206516631U (zh) | 2017-09-22 |
CN107293539A (zh) | 2017-10-24 |
FR3049766A1 (fr) | 2017-10-06 |
US20170287893A1 (en) | 2017-10-05 |
CN107293539B (zh) | 2019-03-19 |
US9793257B1 (en) | 2017-10-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 2 |
|
PLSC | Publication of the preliminary search report |
Effective date: 20171006 |
|
PLFP | Fee payment |
Year of fee payment: 3 |
|
PLFP | Fee payment |
Year of fee payment: 5 |
|
ST | Notification of lapse |
Effective date: 20211105 |