FR3049766B1 - Dispositif de protection contre des decharges electrostatiques a seuil de declenchement ajustable - Google Patents

Dispositif de protection contre des decharges electrostatiques a seuil de declenchement ajustable Download PDF

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Publication number
FR3049766B1
FR3049766B1 FR1652712A FR1652712A FR3049766B1 FR 3049766 B1 FR3049766 B1 FR 3049766B1 FR 1652712 A FR1652712 A FR 1652712A FR 1652712 A FR1652712 A FR 1652712A FR 3049766 B1 FR3049766 B1 FR 3049766B1
Authority
FR
France
Prior art keywords
protection against
against electrostatic
electrostatic discharges
trigger threshold
adjustable trigger
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1652712A
Other languages
English (en)
Other versions
FR3049766A1 (fr
Inventor
Mathieu Rouviere
Arnaud Florence
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Tours SAS
Original Assignee
STMicroelectronics Tours SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Tours SAS filed Critical STMicroelectronics Tours SAS
Priority to FR1652712A priority Critical patent/FR3049766B1/fr
Priority to US15/252,964 priority patent/US9793257B1/en
Priority to CN201621089402.4U priority patent/CN206516631U/zh
Priority to CN201610860938.XA priority patent/CN107293539B/zh
Publication of FR3049766A1 publication Critical patent/FR3049766A1/fr
Application granted granted Critical
Publication of FR3049766B1 publication Critical patent/FR3049766B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0676—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type comprising combinations of diodes, or capacitors or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/866—Zener diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)

Abstract

L'invention concerne un dispositif (210) de protection contre des décharges électrostatiques, comportant : des première (211) et deuxième (212) diodes montées en série entre des première (N1) et deuxième (N2) bornes de connexion du dispositif ; une troisième borne (N3) de connexion reliée au point milieu entre les première (211) et deuxième (212) diodes ; et un condensateur (213) monté en parallèle des première (211) et deuxième (212) diodes, entre les première (N1) et deuxième (N2) bornes.
FR1652712A 2016-03-30 2016-03-30 Dispositif de protection contre des decharges electrostatiques a seuil de declenchement ajustable Expired - Fee Related FR3049766B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1652712A FR3049766B1 (fr) 2016-03-30 2016-03-30 Dispositif de protection contre des decharges electrostatiques a seuil de declenchement ajustable
US15/252,964 US9793257B1 (en) 2016-03-30 2016-08-31 Electrostatic discharge protection device having an adjustable triggering threshold
CN201621089402.4U CN206516631U (zh) 2016-03-30 2016-09-21 防止静电放电的保护装置以及电子***
CN201610860938.XA CN107293539B (zh) 2016-03-30 2016-09-21 具有可调节的触发阈值的静电放电保护装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1652712A FR3049766B1 (fr) 2016-03-30 2016-03-30 Dispositif de protection contre des decharges electrostatiques a seuil de declenchement ajustable
FR1652712 2016-03-30

Publications (2)

Publication Number Publication Date
FR3049766A1 FR3049766A1 (fr) 2017-10-06
FR3049766B1 true FR3049766B1 (fr) 2018-11-16

Family

ID=55953296

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1652712A Expired - Fee Related FR3049766B1 (fr) 2016-03-30 2016-03-30 Dispositif de protection contre des decharges electrostatiques a seuil de declenchement ajustable

Country Status (3)

Country Link
US (1) US9793257B1 (fr)
CN (2) CN107293539B (fr)
FR (1) FR3049766B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI655818B (zh) * 2018-07-27 2019-04-01 智原科技股份有限公司 積體電路的靜電放電防護裝置
US11801168B2 (en) 2019-11-15 2023-10-31 The Procter And Gamble Company Tape-type absorbent article with belt structure

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5189588A (en) * 1989-03-15 1993-02-23 Matsushita Electric Industrial Co., Ltd. Surge protection apparatus
US20020180552A1 (en) * 2001-05-29 2002-12-05 Bennett Jeffrey H. Input power limiter for a microwave receiver
US8183593B2 (en) * 2009-10-16 2012-05-22 Oracle America, Inc. Semiconductor die with integrated electro-static discharge device
US20130050884A1 (en) * 2011-08-23 2013-02-28 Himax Technologies Limited Electrostatic discharge (esd) protection element and esd circuit thereof
FR2994335A1 (fr) * 2012-08-01 2014-02-07 St Microelectronics Tours Sas Dispositif de protection d'un circuit integre contre des surtensions

Also Published As

Publication number Publication date
CN206516631U (zh) 2017-09-22
CN107293539A (zh) 2017-10-24
FR3049766A1 (fr) 2017-10-06
US20170287893A1 (en) 2017-10-05
CN107293539B (zh) 2019-03-19
US9793257B1 (en) 2017-10-17

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