FR3038131B1 - Dispositif de protection ameliore contre les decharges electrostatiques. - Google Patents

Dispositif de protection ameliore contre les decharges electrostatiques. Download PDF

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Publication number
FR3038131B1
FR3038131B1 FR1555921A FR1555921A FR3038131B1 FR 3038131 B1 FR3038131 B1 FR 3038131B1 FR 1555921 A FR1555921 A FR 1555921A FR 1555921 A FR1555921 A FR 1555921A FR 3038131 B1 FR3038131 B1 FR 3038131B1
Authority
FR
France
Prior art keywords
protection device
electrostatic discharge
device against
improved protection
against electrostatic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1555921A
Other languages
English (en)
Other versions
FR3038131A1 (fr
Inventor
Johan Bourgeat
Boris Heitz
Jean Jimenez
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR1555921A priority Critical patent/FR3038131B1/fr
Priority to US14/964,704 priority patent/US9997907B2/en
Publication of FR3038131A1 publication Critical patent/FR3038131A1/fr
Application granted granted Critical
Publication of FR3038131B1 publication Critical patent/FR3038131B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
    • H01L27/0262—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
    • H01L27/0285—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements bias arrangements for gate electrode of field effect transistors, e.g. RC networks, voltage partitioning circuits
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
FR1555921A 2015-06-26 2015-06-26 Dispositif de protection ameliore contre les decharges electrostatiques. Expired - Fee Related FR3038131B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1555921A FR3038131B1 (fr) 2015-06-26 2015-06-26 Dispositif de protection ameliore contre les decharges electrostatiques.
US14/964,704 US9997907B2 (en) 2015-06-26 2015-12-10 Device for protection against electrostatic discharges

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1555921 2015-06-26
FR1555921A FR3038131B1 (fr) 2015-06-26 2015-06-26 Dispositif de protection ameliore contre les decharges electrostatiques.

Publications (2)

Publication Number Publication Date
FR3038131A1 FR3038131A1 (fr) 2016-12-30
FR3038131B1 true FR3038131B1 (fr) 2018-03-23

Family

ID=54329687

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1555921A Expired - Fee Related FR3038131B1 (fr) 2015-06-26 2015-06-26 Dispositif de protection ameliore contre les decharges electrostatiques.

Country Status (2)

Country Link
US (1) US9997907B2 (fr)
FR (1) FR3038131B1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018133503A (ja) * 2017-02-16 2018-08-23 東芝メモリ株式会社 半導体記憶装置
FR3064383B1 (fr) * 2017-03-23 2019-11-15 Stmicroelectronics Sa Dispositif integre de neurone artificiel
US20200243512A1 (en) * 2019-01-28 2020-07-30 Stmicroelectronics International N.V. Nmos transistor with bulk dynamically coupled to drain
CN116565820B (zh) * 2023-07-10 2023-10-31 荣耀终端有限公司 一种防静电保护电路及电子设备

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9019666B2 (en) 2010-01-22 2015-04-28 Stmicroelectronics S.A. Electronic device, in particular for protection against electrostatic discharges, and method for protecting a component against electrostatic discharges
US8649134B2 (en) * 2010-03-11 2014-02-11 Silicon Laboratories Inc. Electrostatic discharge protection rail clamp with discharge interruption circuitry
US8817433B2 (en) * 2011-07-28 2014-08-26 Arm Limited Electrostatic discharge protection device having an intermediate voltage supply for limiting voltage stress on components
US8737028B2 (en) * 2011-12-06 2014-05-27 International Business Machines Corporation RC-triggered ESD clamp device with feedback for time constant adjustment
US9438030B2 (en) * 2012-11-20 2016-09-06 Freescale Semiconductor, Inc. Trigger circuit and method for improved transient immunity
JP2014132717A (ja) * 2013-01-07 2014-07-17 Seiko Epson Corp 静電気放電保護回路及び半導体回路装置

Also Published As

Publication number Publication date
FR3038131A1 (fr) 2016-12-30
US20160380427A1 (en) 2016-12-29
US9997907B2 (en) 2018-06-12

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