FR3038131B1 - Dispositif de protection ameliore contre les decharges electrostatiques. - Google Patents
Dispositif de protection ameliore contre les decharges electrostatiques. Download PDFInfo
- Publication number
- FR3038131B1 FR3038131B1 FR1555921A FR1555921A FR3038131B1 FR 3038131 B1 FR3038131 B1 FR 3038131B1 FR 1555921 A FR1555921 A FR 1555921A FR 1555921 A FR1555921 A FR 1555921A FR 3038131 B1 FR3038131 B1 FR 3038131B1
- Authority
- FR
- France
- Prior art keywords
- protection device
- electrostatic discharge
- device against
- improved protection
- against electrostatic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
- H01L27/0262—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
- H01L27/0285—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements bias arrangements for gate electrode of field effect transistors, e.g. RC networks, voltage partitioning circuits
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
- H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1555921A FR3038131B1 (fr) | 2015-06-26 | 2015-06-26 | Dispositif de protection ameliore contre les decharges electrostatiques. |
US14/964,704 US9997907B2 (en) | 2015-06-26 | 2015-12-10 | Device for protection against electrostatic discharges |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1555921 | 2015-06-26 | ||
FR1555921A FR3038131B1 (fr) | 2015-06-26 | 2015-06-26 | Dispositif de protection ameliore contre les decharges electrostatiques. |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3038131A1 FR3038131A1 (fr) | 2016-12-30 |
FR3038131B1 true FR3038131B1 (fr) | 2018-03-23 |
Family
ID=54329687
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1555921A Expired - Fee Related FR3038131B1 (fr) | 2015-06-26 | 2015-06-26 | Dispositif de protection ameliore contre les decharges electrostatiques. |
Country Status (2)
Country | Link |
---|---|
US (1) | US9997907B2 (fr) |
FR (1) | FR3038131B1 (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018133503A (ja) * | 2017-02-16 | 2018-08-23 | 東芝メモリ株式会社 | 半導体記憶装置 |
FR3064383B1 (fr) * | 2017-03-23 | 2019-11-15 | Stmicroelectronics Sa | Dispositif integre de neurone artificiel |
US20200243512A1 (en) * | 2019-01-28 | 2020-07-30 | Stmicroelectronics International N.V. | Nmos transistor with bulk dynamically coupled to drain |
CN116565820B (zh) * | 2023-07-10 | 2023-10-31 | 荣耀终端有限公司 | 一种防静电保护电路及电子设备 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9019666B2 (en) | 2010-01-22 | 2015-04-28 | Stmicroelectronics S.A. | Electronic device, in particular for protection against electrostatic discharges, and method for protecting a component against electrostatic discharges |
US8649134B2 (en) * | 2010-03-11 | 2014-02-11 | Silicon Laboratories Inc. | Electrostatic discharge protection rail clamp with discharge interruption circuitry |
US8817433B2 (en) * | 2011-07-28 | 2014-08-26 | Arm Limited | Electrostatic discharge protection device having an intermediate voltage supply for limiting voltage stress on components |
US8737028B2 (en) * | 2011-12-06 | 2014-05-27 | International Business Machines Corporation | RC-triggered ESD clamp device with feedback for time constant adjustment |
US9438030B2 (en) * | 2012-11-20 | 2016-09-06 | Freescale Semiconductor, Inc. | Trigger circuit and method for improved transient immunity |
JP2014132717A (ja) * | 2013-01-07 | 2014-07-17 | Seiko Epson Corp | 静電気放電保護回路及び半導体回路装置 |
-
2015
- 2015-06-26 FR FR1555921A patent/FR3038131B1/fr not_active Expired - Fee Related
- 2015-12-10 US US14/964,704 patent/US9997907B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
FR3038131A1 (fr) | 2016-12-30 |
US20160380427A1 (en) | 2016-12-29 |
US9997907B2 (en) | 2018-06-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 2 |
|
PLSC | Publication of the preliminary search report |
Effective date: 20161230 |
|
PLFP | Fee payment |
Year of fee payment: 3 |
|
PLFP | Fee payment |
Year of fee payment: 4 |
|
PLFP | Fee payment |
Year of fee payment: 5 |
|
PLFP | Fee payment |
Year of fee payment: 6 |
|
ST | Notification of lapse |
Effective date: 20220205 |