FR3033643B1 - Dispositif et procede pour detecter des defauts dans des zones de liaison entre des echantillons tels que des wafers - Google Patents

Dispositif et procede pour detecter des defauts dans des zones de liaison entre des echantillons tels que des wafers Download PDF

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Publication number
FR3033643B1
FR3033643B1 FR1552076A FR1552076A FR3033643B1 FR 3033643 B1 FR3033643 B1 FR 3033643B1 FR 1552076 A FR1552076 A FR 1552076A FR 1552076 A FR1552076 A FR 1552076A FR 3033643 B1 FR3033643 B1 FR 3033643B1
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France
Prior art keywords
optical
samples
arm
area
wafers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1552076A
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English (en)
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FR3033643A1 (fr
Inventor
Sylvain Perrot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Unity Semiconductor SAS
Original Assignee
Fogale Nanotech SA
Unity Semiconductor SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fogale Nanotech SA, Unity Semiconductor SAS filed Critical Fogale Nanotech SA
Priority to FR1552076A priority Critical patent/FR3033643B1/fr
Priority to US15/556,988 priority patent/US20180059032A1/en
Priority to EP16713297.6A priority patent/EP3268728A1/fr
Priority to PCT/EP2016/055071 priority patent/WO2016146460A1/fr
Publication of FR3033643A1 publication Critical patent/FR3033643A1/fr
Application granted granted Critical
Publication of FR3033643B1 publication Critical patent/FR3033643B1/fr
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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/02001—Interferometers characterised by controlling or generating intrinsic radiation properties
    • G01B9/0201—Interferometers characterised by controlling or generating intrinsic radiation properties using temporal phase variation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/02055—Reduction or prevention of errors; Testing; Calibration
    • G01B9/02075—Reduction or prevention of errors; Testing; Calibration of particular errors
    • G01B9/02078—Caused by ambiguity
    • G01B9/02079—Quadrature detection, i.e. detecting relatively phase-shifted signals
    • G01B9/02081—Quadrature detection, i.e. detecting relatively phase-shifted signals simultaneous quadrature detection, e.g. by spatial phase shifting
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/0209—Low-coherence interferometers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/8422—Investigating thin films, e.g. matrix isolation method
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

La présente invention concerne un dispositif de mesure pour contrôler une zone de liaison (18) entre des échantillons (16, 17), comprenant (i) un interféromètre à faible cohérence illuminé par une source de lumière polychromatique avec un bras de mesure traversant ladite zone de liaison (18) et un bras de référence, (ii) au moins un détecteur optique (10) et des moyens de conditionnement optiques et/ou mécaniques (15) agencés pour permettre l'acquisition d'au moins deux mesures d'interférences avec des conditions de phase différentes entre un faisceau optique de mesure (21) issu du bras de mesure et un faisceau optique de référence (20) issu du bras de référence ; et (iii) des moyens de calcul (25) agencés pour calculer une information de contraste desdites interférences, et rechercher sur la base de ladite information de contraste des défauts (19) dans ladite zone de liaison (18).
FR1552076A 2015-03-13 2015-03-13 Dispositif et procede pour detecter des defauts dans des zones de liaison entre des echantillons tels que des wafers Active FR3033643B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1552076A FR3033643B1 (fr) 2015-03-13 2015-03-13 Dispositif et procede pour detecter des defauts dans des zones de liaison entre des echantillons tels que des wafers
US15/556,988 US20180059032A1 (en) 2015-03-13 2016-03-10 Device and method for detecting defects in bonding zones between samples such as wafers
EP16713297.6A EP3268728A1 (fr) 2015-03-13 2016-03-10 Dispositif et procede pour detecter des defauts dans des zones de liaison entre des echantillons tels que des wafers
PCT/EP2016/055071 WO2016146460A1 (fr) 2015-03-13 2016-03-10 Dispositif et procede pour detecter des defauts dans des zones de liaison entre des echantillons tels que des wafers

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1552076A FR3033643B1 (fr) 2015-03-13 2015-03-13 Dispositif et procede pour detecter des defauts dans des zones de liaison entre des echantillons tels que des wafers
FR1552076 2015-03-13

Publications (2)

Publication Number Publication Date
FR3033643A1 FR3033643A1 (fr) 2016-09-16
FR3033643B1 true FR3033643B1 (fr) 2020-07-17

Family

ID=53776703

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1552076A Active FR3033643B1 (fr) 2015-03-13 2015-03-13 Dispositif et procede pour detecter des defauts dans des zones de liaison entre des echantillons tels que des wafers

Country Status (4)

Country Link
US (1) US20180059032A1 (fr)
EP (1) EP3268728A1 (fr)
FR (1) FR3033643B1 (fr)
WO (1) WO2016146460A1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10872873B2 (en) * 2017-11-14 2020-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method for bonding wafers and bonding tool
JP7312278B2 (ja) * 2019-06-07 2023-07-20 フォーガル ナノテック 光学素子の界面を測定するための装置および方法
CN112595720A (zh) * 2020-12-21 2021-04-02 藤仓烽火光电材料科技有限公司 一种基于激光干涉成像检测疏松体的***
CN113504249B (zh) * 2021-06-26 2023-01-24 长江存储科技有限责任公司 键合晶圆的空洞检测方法及键合晶圆的空洞检测装置
US20240035810A1 (en) * 2022-08-01 2024-02-01 Kla Corporation 3d profilometry with a linnik interferometer
EP4382895A1 (fr) * 2022-12-08 2024-06-12 Unity Semiconductor Procédé d'inspection pour détecter une interface de liaison défectueuse dans un substrat d'échantillon et système de mesure mettant en oeuvre le procédé

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002100660A (ja) * 2000-07-18 2002-04-05 Hitachi Ltd 欠陥検出方法と欠陥観察方法及び欠陥検出装置
US7016048B2 (en) * 2002-04-09 2006-03-21 The Regents Of The University Of California Phase-resolved functional optical coherence tomography: simultaneous imaging of the stokes vectors, structure, blood flow velocity, standard deviation and birefringence in biological samples
US7209239B2 (en) * 2002-10-02 2007-04-24 Kla-Tencor Technologies Corporation System and method for coherent optical inspection
US7271918B2 (en) * 2003-03-06 2007-09-18 Zygo Corporation Profiling complex surface structures using scanning interferometry
JP4381847B2 (ja) * 2004-02-26 2009-12-09 株式会社トプコン 光画像計測装置
JP4566685B2 (ja) * 2004-10-13 2010-10-20 株式会社トプコン 光画像計測装置及び光画像計測方法
US7986412B2 (en) * 2008-06-03 2011-07-26 Jzw Llc Interferometric defect detection and classification
US9355919B2 (en) * 2010-08-24 2016-05-31 Nanda Technologies Gmbh Methods and systems for inspecting bonded wafers
DE102011051146B3 (de) * 2011-06-17 2012-10-04 Precitec Optronik Gmbh Prüfverfahren zum Prüfen einer Verbindungsschicht zwischen waferförmigen Proben
JP5787255B2 (ja) * 2011-07-12 2015-09-30 国立大学法人 筑波大学 Ｐｓ−ｏｃｔの計測データを補正するプログラム及び該プログラムを搭載したｐｓ−ｏｃｔシステム
JP5984351B2 (ja) * 2011-09-14 2016-09-06 キヤノン株式会社 計測装置
FR2994734B1 (fr) * 2012-08-21 2017-08-25 Fogale Nanotech Dispositif et procede pour faire des mesures dimensionnelles sur des objets multi-couches tels que des wafers.
US20140333936A1 (en) * 2013-05-10 2014-11-13 Industrial Technology Research Institute Thickness measuring system and method for a bonding layer
US9389064B2 (en) * 2014-03-28 2016-07-12 Intel Corporation Inline inspection of the contact between conductive traces and substrate for hidden defects using white light interferometer with tilted objective lens

Also Published As

Publication number Publication date
WO2016146460A1 (fr) 2016-09-22
EP3268728A1 (fr) 2018-01-17
FR3033643A1 (fr) 2016-09-16
US20180059032A1 (en) 2018-03-01

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