FR3032064B1 - Dispositif optoelectronique et son procede de fabrication - Google Patents

Dispositif optoelectronique et son procede de fabrication Download PDF

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Publication number
FR3032064B1
FR3032064B1 FR1550511A FR1550511A FR3032064B1 FR 3032064 B1 FR3032064 B1 FR 3032064B1 FR 1550511 A FR1550511 A FR 1550511A FR 1550511 A FR1550511 A FR 1550511A FR 3032064 B1 FR3032064 B1 FR 3032064B1
Authority
FR
France
Prior art keywords
manufacturing
same
optoelectronic device
optoelectronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1550511A
Other languages
English (en)
Other versions
FR3032064A1 (fr
Inventor
Benoit Amstatt
Sylvia SCARINGELLA
Jesus ZUNIGA-PEREZ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Aledia
Original Assignee
Centre National de la Recherche Scientifique CNRS
Aledia
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, Aledia filed Critical Centre National de la Recherche Scientifique CNRS
Priority to FR1550511A priority Critical patent/FR3032064B1/fr
Priority to PCT/FR2016/050111 priority patent/WO2016116703A1/fr
Priority to US15/541,682 priority patent/US10424692B2/en
Priority to EP16703590.6A priority patent/EP3248227B1/fr
Priority to EP19160785.2A priority patent/EP3514841B1/fr
Publication of FR3032064A1 publication Critical patent/FR3032064A1/fr
Application granted granted Critical
Publication of FR3032064B1 publication Critical patent/FR3032064B1/fr
Priority to US16/538,437 priority patent/US10651341B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Led Devices (AREA)
FR1550511A 2015-01-22 2015-01-22 Dispositif optoelectronique et son procede de fabrication Expired - Fee Related FR3032064B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR1550511A FR3032064B1 (fr) 2015-01-22 2015-01-22 Dispositif optoelectronique et son procede de fabrication
PCT/FR2016/050111 WO2016116703A1 (fr) 2015-01-22 2016-01-20 Dispositif optoelectronique et son procede de fabrication
US15/541,682 US10424692B2 (en) 2015-01-22 2016-01-20 Optoelectronic device comprising three-dimensional electroluminescent diodes emitting at different wavelengths
EP16703590.6A EP3248227B1 (fr) 2015-01-22 2016-01-20 Dispositif optoelectronique et son procede de fabrication
EP19160785.2A EP3514841B1 (fr) 2015-01-22 2016-01-20 Dispositif optoélectronique et son procédé de fabrication
US16/538,437 US10651341B2 (en) 2015-01-22 2019-08-12 Optoelectronic device and method for manufacturing same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1550511 2015-01-22
FR1550511A FR3032064B1 (fr) 2015-01-22 2015-01-22 Dispositif optoelectronique et son procede de fabrication

Publications (2)

Publication Number Publication Date
FR3032064A1 FR3032064A1 (fr) 2016-07-29
FR3032064B1 true FR3032064B1 (fr) 2018-03-09

Family

ID=54065938

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1550511A Expired - Fee Related FR3032064B1 (fr) 2015-01-22 2015-01-22 Dispositif optoelectronique et son procede de fabrication

Country Status (4)

Country Link
US (2) US10424692B2 (fr)
EP (2) EP3248227B1 (fr)
FR (1) FR3032064B1 (fr)
WO (1) WO2016116703A1 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3032064B1 (fr) 2015-01-22 2018-03-09 Aledia Dispositif optoelectronique et son procede de fabrication
FR3053054B1 (fr) 2016-06-28 2021-04-02 Commissariat Energie Atomique Structure de nucleation adaptee a la croissance epitaxiale d’elements semiconducteurs tridimensionnels
FR3068515B1 (fr) * 2017-06-30 2019-10-25 Aledia Dispositif optoélectronique comprenant des diodes électroluminescentes
FR3076080B1 (fr) * 2017-12-27 2019-11-29 Aledia Pseudo-substrat pour dispositif optoelectronique et son procede de fabrication
FR3076399B1 (fr) * 2017-12-28 2020-01-24 Aledia Dispositif optoelectronique comprenant des diodes electroluminescentes tridimensionnelles
JP7351546B2 (ja) * 2018-10-31 2023-11-13 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア エピタキシャル側方過成長を用いて滑らかな表面を取得する方法
KR102649029B1 (ko) * 2019-04-10 2024-03-20 삼성전자주식회사 Led 소자, led 소자의 제조 방법 및 led 소자를 포함하는 디스플레이 장치
US11094846B1 (en) 2020-08-31 2021-08-17 4233999 Canada Inc. Monolithic nanocolumn structures
US11799054B1 (en) 2023-02-08 2023-10-24 4233999 Canada Inc. Monochromatic emitters on coalesced selective area growth nanocolumns

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1665468B1 (de) 1967-02-14 1971-04-22 Rohde & Schwarz Koaxiale miniatur stirnkontakt kupplungshaelfte
TWI222756B (en) * 2002-11-12 2004-10-21 Epitech Corp Ltd Lateral current blocking light emitting diode and method of making the same
EP1885918B1 (fr) * 2005-05-11 2017-01-25 North Carolina State University Procedes de preparation de films au nitrure de groupe iii de polarite regulee
US7952109B2 (en) * 2006-07-10 2011-05-31 Alcatel-Lucent Usa Inc. Light-emitting crystal structures
KR20110131801A (ko) * 2010-05-31 2011-12-07 삼성전자주식회사 발광 소자 및 다중 파장의 광을 만드는 방법
FR2995729B1 (fr) * 2012-09-18 2016-01-01 Aledia Dispositif opto-electrique a microfils ou nanofils semiconducteurs et son procede de fabrication
JP6227128B2 (ja) * 2013-06-07 2017-11-08 グロ アーベーＧｌｏ Ａｂ マルチカラーｌｅｄ及びその製造方法
FR3032064B1 (fr) 2015-01-22 2018-03-09 Aledia Dispositif optoelectronique et son procede de fabrication

Also Published As

Publication number Publication date
EP3514841A1 (fr) 2019-07-24
EP3248227A1 (fr) 2017-11-29
US10651341B2 (en) 2020-05-12
FR3032064A1 (fr) 2016-07-29
US20180277717A1 (en) 2018-09-27
US10424692B2 (en) 2019-09-24
US20190363219A1 (en) 2019-11-28
EP3248227B1 (fr) 2019-03-06
EP3514841B1 (fr) 2020-12-30
WO2016116703A1 (fr) 2016-07-28

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