FR3014266B1 - Procede et dispositif de commande d'un echantillonneur bloqueur. - Google Patents
Procede et dispositif de commande d'un echantillonneur bloqueur.Info
- Publication number
- FR3014266B1 FR3014266B1 FR1362000A FR1362000A FR3014266B1 FR 3014266 B1 FR3014266 B1 FR 3014266B1 FR 1362000 A FR1362000 A FR 1362000A FR 1362000 A FR1362000 A FR 1362000A FR 3014266 B1 FR3014266 B1 FR 3014266B1
- Authority
- FR
- France
- Prior art keywords
- controlling
- blocker
- sample
- blocker sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
- G11C27/02—Sample-and-hold arrangements
- G11C27/024—Sample-and-hold arrangements using a capacitive memory element
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/023—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in clock generator or timing circuitry
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C29/50016—Marginal testing, e.g. race, voltage or current testing of retention
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/023—Generators characterised by the type of circuit or by the means used for producing pulses by the use of differential amplifiers or comparators, with internal or external positive feedback
- H03K3/0231—Astable circuits
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1362000A FR3014266B1 (fr) | 2013-12-03 | 2013-12-03 | Procede et dispositif de commande d'un echantillonneur bloqueur. |
| FR1455591A FR3014267B1 (fr) | 2013-12-03 | 2014-06-18 | Procede de caracterisation d'un procede de fabrication de transistors mos |
| US14/549,291 US9460808B2 (en) | 2013-12-03 | 2014-11-20 | Method and device for controlling a sample and hold circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1362000A FR3014266B1 (fr) | 2013-12-03 | 2013-12-03 | Procede et dispositif de commande d'un echantillonneur bloqueur. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR3014266A1 FR3014266A1 (fr) | 2015-06-05 |
| FR3014266B1 true FR3014266B1 (fr) | 2017-07-21 |
Family
ID=50828977
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR1362000A Expired - Fee Related FR3014266B1 (fr) | 2013-12-03 | 2013-12-03 | Procede et dispositif de commande d'un echantillonneur bloqueur. |
| FR1455591A Expired - Fee Related FR3014267B1 (fr) | 2013-12-03 | 2014-06-18 | Procede de caracterisation d'un procede de fabrication de transistors mos |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR1455591A Expired - Fee Related FR3014267B1 (fr) | 2013-12-03 | 2014-06-18 | Procede de caracterisation d'un procede de fabrication de transistors mos |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US9460808B2 (fr) |
| FR (2) | FR3014266B1 (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB201622029D0 (en) * | 2016-12-22 | 2017-02-08 | Nederlands Inst Voor Ecologie (Nioo-Knaw) See Scientia Terrae Vzw Nordic Semiconductor Asa | Voltage sampling circuits |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100198617B1 (ko) * | 1995-12-27 | 1999-06-15 | 구본준 | 모오스 캐패시터의 누설전압감지회로 |
| JPH10178108A (ja) | 1996-12-19 | 1998-06-30 | Mitsubishi Electric Corp | 半導体記憶装置 |
| US6882172B1 (en) * | 2002-04-16 | 2005-04-19 | Transmeta Corporation | System and method for measuring transistor leakage current with a ring oscillator |
| ATE335206T1 (de) * | 2002-09-20 | 2006-08-15 | Koninkl Philips Electronics Nv | Verfahren und einrichtung zur ruhestrombestimmung |
| US7035131B2 (en) * | 2004-05-06 | 2006-04-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dynamic random access memory cell leakage current detector |
| US7177220B2 (en) * | 2004-05-07 | 2007-02-13 | Taiwan Semiconductor Manufacturing Co., Ltd | Refresh counter with dynamic tracking of process, voltage and temperature variation for semiconductor memory |
| US7235997B2 (en) * | 2004-07-14 | 2007-06-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | CMOS leakage current meter |
| JP2007172766A (ja) * | 2005-12-22 | 2007-07-05 | Matsushita Electric Ind Co Ltd | 半導体リーク電流検出器とリーク電流測定方法および電圧トリミング機能付半導体リーク電流検出器とリファレンス電圧トリミング方法およびこれらの半導体集積回路 |
| US8044676B2 (en) * | 2008-06-11 | 2011-10-25 | Infineon Technologies Ag | IDDQ testing |
| US7746119B2 (en) * | 2008-09-18 | 2010-06-29 | Power Integrations, Inc. | Leakage compensation for sample and hold devices |
| US7816951B1 (en) * | 2008-10-10 | 2010-10-19 | National Semiconductor Corporation | Locally boosted top plate sampling for a sampling capacitor |
| EP2634774B1 (fr) * | 2012-02-28 | 2019-09-18 | Nxp B.V. | Circuit à échantillonnage et maintien et procédé |
| FR3013920A1 (fr) * | 2013-11-25 | 2015-05-29 | St Microelectronics Rousset | Dispositif electronique de commutation avec reduction des courants de fuite et procede de commande correspondant |
-
2013
- 2013-12-03 FR FR1362000A patent/FR3014266B1/fr not_active Expired - Fee Related
-
2014
- 2014-06-18 FR FR1455591A patent/FR3014267B1/fr not_active Expired - Fee Related
- 2014-11-20 US US14/549,291 patent/US9460808B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| FR3014267B1 (fr) | 2015-11-13 |
| US9460808B2 (en) | 2016-10-04 |
| FR3014266A1 (fr) | 2015-06-05 |
| FR3014267A1 (fr) | 2015-06-05 |
| US20150155053A1 (en) | 2015-06-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PLFP | Fee payment |
Year of fee payment: 3 |
|
| PLFP | Fee payment |
Year of fee payment: 4 |
|
| PLFP | Fee payment |
Year of fee payment: 5 |
|
| PLFP | Fee payment |
Year of fee payment: 7 |
|
| ST | Notification of lapse |
Effective date: 20210805 |