FR3005203B1 - Circuit integre sur soi comprenant un transistor de protection contre des decharges electrostatiques - Google Patents

Circuit integre sur soi comprenant un transistor de protection contre des decharges electrostatiques

Info

Publication number
FR3005203B1
FR3005203B1 FR1353811A FR1353811A FR3005203B1 FR 3005203 B1 FR3005203 B1 FR 3005203B1 FR 1353811 A FR1353811 A FR 1353811A FR 1353811 A FR1353811 A FR 1353811A FR 3005203 B1 FR3005203 B1 FR 3005203B1
Authority
FR
France
Prior art keywords
single circuit
protection transistor
against electrostatic
integrated single
electrostatic discharges
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1353811A
Other languages
English (en)
Other versions
FR3005203A1 (fr
Inventor
Claire Fenouillet-Beranger
Pascal Fonteneau
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
STMicroelectronics SA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, STMicroelectronics SA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1353811A priority Critical patent/FR3005203B1/fr
Priority to US14/261,757 priority patent/US9391057B2/en
Publication of FR3005203A1 publication Critical patent/FR3005203A1/fr
Application granted granted Critical
Publication of FR3005203B1 publication Critical patent/FR3005203B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0296—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices involving a specific disposition of the protective devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H01L27/1207—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR1353811A 2013-04-26 2013-04-26 Circuit integre sur soi comprenant un transistor de protection contre des decharges electrostatiques Active FR3005203B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1353811A FR3005203B1 (fr) 2013-04-26 2013-04-26 Circuit integre sur soi comprenant un transistor de protection contre des decharges electrostatiques
US14/261,757 US9391057B2 (en) 2013-04-26 2014-04-25 Integrated circuit on SOI comprising a transistor protecting from electrostatic discharges

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1353811A FR3005203B1 (fr) 2013-04-26 2013-04-26 Circuit integre sur soi comprenant un transistor de protection contre des decharges electrostatiques

Publications (2)

Publication Number Publication Date
FR3005203A1 FR3005203A1 (fr) 2014-10-31
FR3005203B1 true FR3005203B1 (fr) 2017-01-06

Family

ID=48746001

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1353811A Active FR3005203B1 (fr) 2013-04-26 2013-04-26 Circuit integre sur soi comprenant un transistor de protection contre des decharges electrostatiques

Country Status (2)

Country Link
US (1) US9391057B2 (fr)
FR (1) FR3005203B1 (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9287257B2 (en) 2014-05-30 2016-03-15 Taiwan Semiconductor Manufacturing Company, Ltd. Power gating for three dimensional integrated circuits (3DIC)
US9583616B2 (en) 2015-03-10 2017-02-28 Globalfoundries Inc. Semiconductor structure including backgate regions and method for the formation thereof
US10147717B2 (en) * 2015-09-03 2018-12-04 Novatek Microelectronics Corp. Electrostatic discharge protection circuit
DE102016110588B4 (de) * 2016-06-08 2020-08-13 Infineon Technologies Ag Halbleiterbauelement mit Isoliergraben und einer vergrabenen lateralen isolierenden Festkörperstruktur und ein Verfahren zu dessen Herstellung
US10115738B2 (en) * 2016-11-17 2018-10-30 Globalfoundries Inc. Self-aligned back-plane and well contacts for fully depleted silicon on insulator device
US9941301B1 (en) * 2016-12-22 2018-04-10 Globalfoundries Inc. Fully depleted silicon-on-insulator (FDSOI) transistor device and self-aligned active area in FDSOI bulk exposed regions
US10096602B1 (en) * 2017-03-15 2018-10-09 Globalfoundries Singapore Pte. Ltd. MTP memory for SOI process
KR102324168B1 (ko) 2017-06-21 2021-11-08 삼성전자주식회사 반도체 장치 및 그 제조 방법
US10090227B1 (en) * 2017-07-13 2018-10-02 Globalfoundries Inc. Back biasing in SOI FET technology
CN109326594A (zh) * 2018-08-20 2019-02-12 矽力杰半导体技术(杭州)有限公司 一种半导体晶片
FR3087047B1 (fr) * 2018-10-08 2021-10-22 St Microelectronics Sa Transistor bipolaire
FR3087048B1 (fr) 2018-10-08 2021-11-12 St Microelectronics Sa Transistor bipolaire
FR3095891B1 (fr) * 2019-05-09 2023-01-13 St Microelectronics Sa Circuit électronique

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1256802A (fr) 1960-05-06 1961-03-24 Robinet prolongateur de canalisation avec noix sphérique à passage intégral au quart de tour
TW594969B (en) * 2003-07-02 2004-06-21 Realtek Semiconductor Corp ESD clamp circuit
US7566914B2 (en) * 2005-07-07 2009-07-28 Intersil Americas Inc. Devices with adjustable dual-polarity trigger- and holding-voltage/current for high level of electrostatic discharge protection in sub-micron mixed signal CMOS/BiCMOS integrated circuits
US7081662B1 (en) * 2005-08-09 2006-07-25 Taiwan Semiconductor Manufacturing Company, Ltd. ESD protection device for high voltage
US8015518B2 (en) * 2007-12-18 2011-09-06 International Business Machines Corporation Structures for electrostatic discharge protection for bipolar semiconductor circuitry
FR2980640B1 (fr) * 2011-09-26 2014-05-02 Commissariat Energie Atomique Circuit integre en technologie fdsoi avec partage de caisson et moyens de polarisation des plans de masse de dopage opposes presents dans un meme caisson
FR2993404B1 (fr) * 2012-07-13 2014-08-22 Commissariat Energie Atomique Circuit integre sur soi comprenant un thyristor (scr) de protection contre des decharges electrostatiques

Also Published As

Publication number Publication date
FR3005203A1 (fr) 2014-10-31
US9391057B2 (en) 2016-07-12
US20140319648A1 (en) 2014-10-30

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