FR3001333B1 - Grille arriere dans transistor de selection pour dram embarquee - Google Patents
Grille arriere dans transistor de selection pour dram embarqueeInfo
- Publication number
- FR3001333B1 FR3001333B1 FR1350547A FR1350547A FR3001333B1 FR 3001333 B1 FR3001333 B1 FR 3001333B1 FR 1350547 A FR1350547 A FR 1350547A FR 1350547 A FR1350547 A FR 1350547A FR 3001333 B1 FR3001333 B1 FR 3001333B1
- Authority
- FR
- France
- Prior art keywords
- selection transistor
- embedded dram
- rear grid
- grid
- dram
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1350547A FR3001333B1 (fr) | 2013-01-22 | 2013-01-22 | Grille arriere dans transistor de selection pour dram embarquee |
CN201380070597.0A CN104995729B (zh) | 2013-01-22 | 2013-12-12 | 用于eDRAM的选择晶体管中的背栅 |
SG11201505244YA SG11201505244YA (en) | 2013-01-22 | 2013-12-12 | Back gate in select transistor for edram |
KR1020157018580A KR102148914B1 (ko) | 2013-01-22 | 2013-12-12 | eDRAM 용 선택 트랜지스터 내의 백 게이트 |
US14/761,471 US9472469B2 (en) | 2013-01-22 | 2013-12-12 | Back gate in select transistor for eDRAM |
PCT/EP2013/076414 WO2014114406A1 (fr) | 2013-01-22 | 2013-12-12 | Grille arrière dans un transistor de sélection pour edram |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1350547A FR3001333B1 (fr) | 2013-01-22 | 2013-01-22 | Grille arriere dans transistor de selection pour dram embarquee |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3001333A1 FR3001333A1 (fr) | 2014-07-25 |
FR3001333B1 true FR3001333B1 (fr) | 2016-05-06 |
Family
ID=48613740
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1350547A Active FR3001333B1 (fr) | 2013-01-22 | 2013-01-22 | Grille arriere dans transistor de selection pour dram embarquee |
Country Status (6)
Country | Link |
---|---|
US (1) | US9472469B2 (fr) |
KR (1) | KR102148914B1 (fr) |
CN (1) | CN104995729B (fr) |
FR (1) | FR3001333B1 (fr) |
SG (1) | SG11201505244YA (fr) |
WO (1) | WO2014114406A1 (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11031072B2 (en) * | 2017-09-28 | 2021-06-08 | Intel Corporation | Dynamic random access memory including threshold switch |
CN109741777A (zh) * | 2018-12-28 | 2019-05-10 | 上海新储集成电路有限公司 | 一种提高速度和保持数据时间的存储器 |
CN116206643B (zh) * | 2022-07-25 | 2024-03-15 | 北京超弦存储器研究院 | 动态随机存储单元、存储器、存储装置及读取方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6037199A (en) * | 1999-08-16 | 2000-03-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | SOI device for DRAM cells beyond gigabit generation and method for making the same |
DE19954867C1 (de) * | 1999-11-15 | 2000-12-07 | Infineon Technologies Ag | DRAM-Zellenanordnung und Verfahren zu deren Herstellung |
US6441436B1 (en) * | 2000-11-29 | 2002-08-27 | United Microelectronics Corp. | SOI device and method of fabrication |
US6710391B2 (en) | 2002-06-26 | 2004-03-23 | Texas Instruments Incorporated | Integrated DRAM process/structure using contact pillars |
KR101415509B1 (ko) * | 2008-07-24 | 2014-07-04 | 삼성전자주식회사 | 메모리 소자, 그 제조 방법 및 동작 방법 |
FR2953636B1 (fr) * | 2009-12-08 | 2012-02-10 | Soitec Silicon On Insulator | Procede de commande d'une cellule memoire dram sur seoi disposant d'une seconde grille de controle enterree sous la couche isolante |
-
2013
- 2013-01-22 FR FR1350547A patent/FR3001333B1/fr active Active
- 2013-12-12 US US14/761,471 patent/US9472469B2/en active Active
- 2013-12-12 CN CN201380070597.0A patent/CN104995729B/zh active Active
- 2013-12-12 WO PCT/EP2013/076414 patent/WO2014114406A1/fr active Application Filing
- 2013-12-12 SG SG11201505244YA patent/SG11201505244YA/en unknown
- 2013-12-12 KR KR1020157018580A patent/KR102148914B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
CN104995729A (zh) | 2015-10-21 |
US9472469B2 (en) | 2016-10-18 |
CN104995729B (zh) | 2018-04-20 |
KR102148914B1 (ko) | 2020-08-27 |
FR3001333A1 (fr) | 2014-07-25 |
US20150357333A1 (en) | 2015-12-10 |
WO2014114406A1 (fr) | 2014-07-31 |
KR20150110514A (ko) | 2015-10-02 |
SG11201505244YA (en) | 2015-08-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DK2884664T3 (da) | Højtydende igbt-gatedriver | |
DE112013002223A5 (de) | Heizkörper | |
FR3003691B1 (fr) | Finfet avec grille arriere | |
DE112014002837B8 (de) | Fahrzeuganzeigevorrichtung | |
FR3001333B1 (fr) | Grille arriere dans transistor de selection pour dram embarquee | |
FI20135291A (fi) | Lämpöpatterijärjestely | |
FI20136016A (fi) | Vedessä kulkeva ajoneuvo | |
FR3002125B1 (fr) | Support notamment pour ecran | |
FR3013280B1 (fr) | Rangement nomade pour vehicule | |
DE112012006252A5 (de) | Radiator | |
BR302014002690S1 (pt) | Configurações aplicadas em grade dianteira superior | |
UA26762S (uk) | Патрубок радіатора транспортного засобу | |
TH133786B (th) | โครงสร้างส่วนด้านท้ายสำหรับยานพาหนะแบบขับขี่บนอานนั่ง | |
TH1501003425B (th) | ยานพาหนะ | |
TH1501003264B (th) | ยานพาหนะ | |
TH1501003265B (th) | ยานพาหนะ | |
TH1401007106A (th) | ครีบสำหรับยานพาหนะที่แล่นในน้ำ | |
BR302013005784S1 (pt) | Configuração aplicada em estaca | |
TH1501001628B (th) | ยานพาหนะ | |
TH1501001627B (th) | ยานพาหนะ | |
UA29210S (uk) | Нижня секція бампера для транспортного засобу | |
CL2013002075S1 (es) | Vehiculo | |
CL2013002016S1 (es) | Vehiculo | |
UA26673S (uk) | Радіатор опалювання транспортного засобу | |
UA28584S (uk) | Бокова панель бампера |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 4 |
|
PLFP | Fee payment |
Year of fee payment: 5 |
|
PLFP | Fee payment |
Year of fee payment: 6 |
|
PLFP | Fee payment |
Year of fee payment: 8 |
|
PLFP | Fee payment |
Year of fee payment: 9 |
|
PLFP | Fee payment |
Year of fee payment: 10 |
|
PLFP | Fee payment |
Year of fee payment: 11 |
|
PLFP | Fee payment |
Year of fee payment: 12 |