FR2978601B1 - METHOD FOR MANUFACTURING GAN SUBSTRATE OR GAN-BASED DEVICE ON NATIVE GAN-TYPE SUBSTRATE USING SACRIFICIAL STAMP LAYER - Google Patents

METHOD FOR MANUFACTURING GAN SUBSTRATE OR GAN-BASED DEVICE ON NATIVE GAN-TYPE SUBSTRATE USING SACRIFICIAL STAMP LAYER

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Publication number
FR2978601B1
FR2978601B1 FR1156994A FR1156994A FR2978601B1 FR 2978601 B1 FR2978601 B1 FR 2978601B1 FR 1156994 A FR1156994 A FR 1156994A FR 1156994 A FR1156994 A FR 1156994A FR 2978601 B1 FR2978601 B1 FR 2978601B1
Authority
FR
France
Prior art keywords
gan
substrate
sacrificial
native
based device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1156994A
Other languages
French (fr)
Other versions
FR2978601A1 (en
Inventor
David John Rogers
Teherani Ferechteh Hosseini
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NANOVATION
Original Assignee
NANOVATION
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NANOVATION filed Critical NANOVATION
Priority to FR1156994A priority Critical patent/FR2978601B1/en
Publication of FR2978601A1 publication Critical patent/FR2978601A1/en
Application granted granted Critical
Publication of FR2978601B1 publication Critical patent/FR2978601B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02389—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02469—Group 12/16 materials
    • H01L21/02472—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR1156994A 2011-07-29 2011-07-29 METHOD FOR MANUFACTURING GAN SUBSTRATE OR GAN-BASED DEVICE ON NATIVE GAN-TYPE SUBSTRATE USING SACRIFICIAL STAMP LAYER Active FR2978601B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR1156994A FR2978601B1 (en) 2011-07-29 2011-07-29 METHOD FOR MANUFACTURING GAN SUBSTRATE OR GAN-BASED DEVICE ON NATIVE GAN-TYPE SUBSTRATE USING SACRIFICIAL STAMP LAYER

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1156994A FR2978601B1 (en) 2011-07-29 2011-07-29 METHOD FOR MANUFACTURING GAN SUBSTRATE OR GAN-BASED DEVICE ON NATIVE GAN-TYPE SUBSTRATE USING SACRIFICIAL STAMP LAYER

Publications (2)

Publication Number Publication Date
FR2978601A1 FR2978601A1 (en) 2013-02-01
FR2978601B1 true FR2978601B1 (en) 2016-05-13

Family

ID=44741605

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1156994A Active FR2978601B1 (en) 2011-07-29 2011-07-29 METHOD FOR MANUFACTURING GAN SUBSTRATE OR GAN-BASED DEVICE ON NATIVE GAN-TYPE SUBSTRATE USING SACRIFICIAL STAMP LAYER

Country Status (1)

Country Link
FR (1) FR2978601B1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9231053B2 (en) 2013-06-25 2016-01-05 Honeywell International Inc. Light emitting diodes having zinc oxide fibers over silicon substrates
US9419081B2 (en) 2014-08-21 2016-08-16 Honeywell International Inc. Reusable substrate bases, semiconductor devices using such reusable substrate bases, and methods for making the reusable substrate bases
GB201814192D0 (en) 2018-08-31 2018-10-17 Univ Bristol A semiconductor on diamond substrate, percursor for use in preparing a semiconductor on diamond substrate, and methods of making the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005001928A (en) * 2003-06-11 2005-01-06 Fujikura Ltd Self-supporting substrate and method for producing the same
KR100638869B1 (en) * 2005-06-21 2006-10-27 삼성전기주식회사 Method of fabricating nitride type compound layer, gan substrate and vertical structure nitride type semiconductor light emitting device
WO2007023911A1 (en) * 2005-08-25 2007-03-01 Tohoku Techno Arch Co., Ltd. Process for producing semiconductor substrate
TW200912053A (en) * 2007-09-14 2009-03-16 Sino American Silicon Prod Inc Method of fabricating semiconductor substrate by use of heterogeneous substrate and recycling heterogeneous substrate during fabrication thereof

Also Published As

Publication number Publication date
FR2978601A1 (en) 2013-02-01

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