FR2968830B1 - Couches matricielles ameliorees pour le depot heteroepitaxial de materiaux semiconducteurs de nitrure iii en utilisant des procedes hvpe - Google Patents
Couches matricielles ameliorees pour le depot heteroepitaxial de materiaux semiconducteurs de nitrure iii en utilisant des procedes hvpeInfo
- Publication number
- FR2968830B1 FR2968830B1 FR1060264A FR1060264A FR2968830B1 FR 2968830 B1 FR2968830 B1 FR 2968830B1 FR 1060264 A FR1060264 A FR 1060264A FR 1060264 A FR1060264 A FR 1060264A FR 2968830 B1 FR2968830 B1 FR 2968830B1
- Authority
- FR
- France
- Prior art keywords
- semiconductor materials
- nitride iii
- matrix layers
- improved matrix
- iii semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000008021 deposition Effects 0.000 title 1
- 238000000151 deposition Methods 0.000 title 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 title 1
- 239000000463 material Substances 0.000 title 1
- 239000011159 matrix material Substances 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 150000004767 nitrides Chemical group 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02513—Microstructure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Nanotechnology (AREA)
- Ceramic Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1060264A FR2968830B1 (fr) | 2010-12-08 | 2010-12-08 | Couches matricielles ameliorees pour le depot heteroepitaxial de materiaux semiconducteurs de nitrure iii en utilisant des procedes hvpe |
TW100134222A TWI533355B (zh) | 2010-11-23 | 2011-09-22 | 用於使用鹵化物汽相磊晶處理之三族氮化物半導體材料之異質磊晶沈積之改善模板層 |
CN201180056302.5A CN103238203B (zh) | 2010-11-23 | 2011-11-23 | 用于利用hvpe工艺异质外延沉积iii族氮化物半导体材料的改进的模板层 |
JP2013540342A JP5895279B2 (ja) | 2010-11-23 | 2011-11-23 | Hvpeプロセスを用いたiii族窒化物半導体材料のヘテロエピタキシャル堆積のための改善されたテンプレート層 |
US13/989,004 US9076666B2 (en) | 2010-11-23 | 2011-11-23 | Template layers for heteroepitaxial deposition of III-nitride semiconductor materials using HVPE processes |
DE112011103882T DE112011103882T5 (de) | 2010-11-23 | 2011-11-23 | Verbesserte Vorlagenschichten für die heteroepitaxiale Abscheidung von III-Nitridhalbleitermaterialien unter Verwendung von HVPE-Vorgängen |
KR1020137015220A KR20130141592A (ko) | 2010-11-23 | 2011-11-23 | Hvpe 프로세스들을 이용하여 iii-질화물 반도체 물질의 헤테로에피택셜 증착을 위한 개선된 템플레이트층들 |
PCT/EP2011/070772 WO2012069521A1 (fr) | 2010-11-23 | 2011-11-23 | Couches de matrice hvpe améliorées pour le dépôt par hétéroépitaxie de matériaux semi-conducteurs à base de nitrure du groupe iii par des procédés hvpe |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1060264A FR2968830B1 (fr) | 2010-12-08 | 2010-12-08 | Couches matricielles ameliorees pour le depot heteroepitaxial de materiaux semiconducteurs de nitrure iii en utilisant des procedes hvpe |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2968830A1 FR2968830A1 (fr) | 2012-06-15 |
FR2968830B1 true FR2968830B1 (fr) | 2014-03-21 |
Family
ID=44071006
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1060264A Expired - Fee Related FR2968830B1 (fr) | 2010-11-23 | 2010-12-08 | Couches matricielles ameliorees pour le depot heteroepitaxial de materiaux semiconducteurs de nitrure iii en utilisant des procedes hvpe |
Country Status (8)
Country | Link |
---|---|
US (1) | US9076666B2 (fr) |
JP (1) | JP5895279B2 (fr) |
KR (1) | KR20130141592A (fr) |
CN (1) | CN103238203B (fr) |
DE (1) | DE112011103882T5 (fr) |
FR (1) | FR2968830B1 (fr) |
TW (1) | TWI533355B (fr) |
WO (1) | WO2012069521A1 (fr) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
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US9564320B2 (en) | 2010-06-18 | 2017-02-07 | Soraa, Inc. | Large area nitride crystal and method for making it |
US20140158976A1 (en) * | 2012-12-06 | 2014-06-12 | Sansaptak DASGUPTA | Iii-n semiconductor-on-silicon structures and techniques |
US9768016B2 (en) | 2013-07-02 | 2017-09-19 | Ultratech, Inc. | Formation of heteroepitaxial layers with rapid thermal processing to remove lattice dislocations |
DE112014004343B4 (de) * | 2013-09-23 | 2019-01-31 | Ultratech, Inc. | Verfahren und Vorrichtung zum Ausbilden von Galliumnitridschichten mit Bauelementqualität auf Siliziumsubstraten |
CN107227490B (zh) * | 2016-03-23 | 2021-06-18 | 松下知识产权经营株式会社 | Iii族氮化物半导体及其制造方法 |
JP7157953B2 (ja) * | 2017-12-21 | 2022-10-21 | パナソニックIpマネジメント株式会社 | 窒化物系薄膜複合構造体及びその製造方法 |
US11280027B2 (en) | 2017-12-21 | 2022-03-22 | Panasonic Intellectual Property Management Co., Ltd. | Composite nitride-based film structure and method for manufacturing same |
US11466384B2 (en) * | 2019-01-08 | 2022-10-11 | Slt Technologies, Inc. | Method of forming a high quality group-III metal nitride boule or wafer using a patterned substrate |
JP2023513570A (ja) | 2020-02-11 | 2023-03-31 | エスエルティー テクノロジーズ インコーポレイテッド | 改善されたiii族窒化物基板、その製造方法、並びにその使用方法 |
US11721549B2 (en) | 2020-02-11 | 2023-08-08 | Slt Technologies, Inc. | Large area group III nitride crystals and substrates, methods of making, and methods of use |
KR20240006627A (ko) * | 2021-05-07 | 2024-01-15 | 더 리젠츠 오브 더 유니버시티 오브 미시간 | 에피택셜 질화물 강유전체 |
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WO2010036602A1 (fr) | 2008-09-26 | 2010-04-01 | S.O.I.Tec Silicon On Insulator Technologies | Procédé de formation d’un substrat composite pour laser |
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US20130052333A1 (en) | 2011-08-22 | 2013-02-28 | Soitec | Deposition systems having reaction chambers configured for in-situ metrology and related methods |
US20130052806A1 (en) | 2011-08-22 | 2013-02-28 | Soitec | Deposition systems having access gates at desirable locations, and related methods |
-
2010
- 2010-12-08 FR FR1060264A patent/FR2968830B1/fr not_active Expired - Fee Related
-
2011
- 2011-09-22 TW TW100134222A patent/TWI533355B/zh not_active IP Right Cessation
- 2011-11-23 WO PCT/EP2011/070772 patent/WO2012069521A1/fr active Application Filing
- 2011-11-23 KR KR1020137015220A patent/KR20130141592A/ko not_active Application Discontinuation
- 2011-11-23 US US13/989,004 patent/US9076666B2/en not_active Expired - Fee Related
- 2011-11-23 JP JP2013540342A patent/JP5895279B2/ja not_active Expired - Fee Related
- 2011-11-23 DE DE112011103882T patent/DE112011103882T5/de not_active Withdrawn
- 2011-11-23 CN CN201180056302.5A patent/CN103238203B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN103238203B (zh) | 2016-04-20 |
US9076666B2 (en) | 2015-07-07 |
DE112011103882T5 (de) | 2013-08-22 |
KR20130141592A (ko) | 2013-12-26 |
FR2968830A1 (fr) | 2012-06-15 |
WO2012069521A1 (fr) | 2012-05-31 |
JP5895279B2 (ja) | 2016-03-30 |
TWI533355B (zh) | 2016-05-11 |
TW201232614A (en) | 2012-08-01 |
JP2014500218A (ja) | 2014-01-09 |
CN103238203A (zh) | 2013-08-07 |
US20140217553A1 (en) | 2014-08-07 |
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