FR2967522B1 - Memoire non-volatile securisee - Google Patents

Memoire non-volatile securisee

Info

Publication number
FR2967522B1
FR2967522B1 FR1004417A FR1004417A FR2967522B1 FR 2967522 B1 FR2967522 B1 FR 2967522B1 FR 1004417 A FR1004417 A FR 1004417A FR 1004417 A FR1004417 A FR 1004417A FR 2967522 B1 FR2967522 B1 FR 2967522B1
Authority
FR
France
Prior art keywords
volatile memory
secure non
secure
volatile
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1004417A
Other languages
English (en)
Other versions
FR2967522A1 (fr
Inventor
Philippe Candelier
Laurent Dedieu
Noureddine Larhriq
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR1004417A priority Critical patent/FR2967522B1/fr
Priority to US13/294,843 priority patent/US8432726B2/en
Publication of FR2967522A1 publication Critical patent/FR2967522A1/fr
Application granted granted Critical
Publication of FR2967522B1 publication Critical patent/FR2967522B1/fr
Priority to US13/836,690 priority patent/US9406372B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/24—Memory cell safety or protection circuits, e.g. arrangements for preventing inadvertent reading or writing; Status cells; Test cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/20—Address safety or protection circuits, i.e. arrangements for preventing unauthorized or accidental access

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Security & Cryptography (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
FR1004417A 2010-11-12 2010-11-12 Memoire non-volatile securisee Expired - Fee Related FR2967522B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR1004417A FR2967522B1 (fr) 2010-11-12 2010-11-12 Memoire non-volatile securisee
US13/294,843 US8432726B2 (en) 2010-11-12 2011-11-11 Secure non-volatile memory
US13/836,690 US9406372B2 (en) 2010-11-12 2013-03-15 Secure non-volatile memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1004417A FR2967522B1 (fr) 2010-11-12 2010-11-12 Memoire non-volatile securisee

Publications (2)

Publication Number Publication Date
FR2967522A1 FR2967522A1 (fr) 2012-05-18
FR2967522B1 true FR2967522B1 (fr) 2012-12-21

Family

ID=44119482

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1004417A Expired - Fee Related FR2967522B1 (fr) 2010-11-12 2010-11-12 Memoire non-volatile securisee

Country Status (2)

Country Link
US (2) US8432726B2 (fr)
FR (1) FR2967522B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9478271B2 (en) * 2013-03-14 2016-10-25 Seagate Technology Llc Nonvolatile memory data recovery after power failure
US20150278681A1 (en) * 2014-04-01 2015-10-01 Boise State University Memory controlled circuit system and apparatus

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6931075B2 (en) * 2001-04-05 2005-08-16 Microchip Technology Incorporated Event detection with a digital processor
US6912150B2 (en) * 2003-05-13 2005-06-28 Lionel Portman Reference current generator, and method of programming, adjusting and/or operating same
US20050063212A1 (en) * 2003-09-18 2005-03-24 Michael Jacob Reference circuit implemented to reduce the degradation of reference capacitors providing reference voltages for 1T1C FeRAM devices
US7009905B2 (en) * 2003-12-23 2006-03-07 International Business Machines Corporation Method and apparatus to reduce bias temperature instability (BTI) effects
EP1818942B1 (fr) 2006-02-14 2011-07-06 Stmicroelectronics Sa Dispositif de mémoire non volatile
US8218380B2 (en) * 2009-10-30 2012-07-10 Apple Inc. Degradation equalization for a memory
US9646177B2 (en) * 2011-04-29 2017-05-09 Altera Corporation Systems and methods for preventing data remanence in memory systems

Also Published As

Publication number Publication date
FR2967522A1 (fr) 2012-05-18
US20130223138A1 (en) 2013-08-29
US8432726B2 (en) 2013-04-30
US20120120716A1 (en) 2012-05-17
US9406372B2 (en) 2016-08-02

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20150731