FR2955206B1 - USE OF NANOSTRUCTURES BASED ON HIGHLY COORDINATED SILICON NANOTUBES AS ELECTRICALLY CONDUCTIVE ELEMENTS - Google Patents

USE OF NANOSTRUCTURES BASED ON HIGHLY COORDINATED SILICON NANOTUBES AS ELECTRICALLY CONDUCTIVE ELEMENTS

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Publication number
FR2955206B1
FR2955206B1 FR1050208A FR1050208A FR2955206B1 FR 2955206 B1 FR2955206 B1 FR 2955206B1 FR 1050208 A FR1050208 A FR 1050208A FR 1050208 A FR1050208 A FR 1050208A FR 2955206 B1 FR2955206 B1 FR 2955206B1
Authority
FR
France
Prior art keywords
nanotube
electrically conductive
conductive elements
silicon nanotubes
highly coordinated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1050208A
Other languages
French (fr)
Other versions
FR2955206A1 (en
Inventor
Holger Vach
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Ecole Polytechnique
Original Assignee
Centre National de la Recherche Scientifique CNRS
Ecole Polytechnique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, Ecole Polytechnique filed Critical Centre National de la Recherche Scientifique CNRS
Priority to FR1050208A priority Critical patent/FR2955206B1/en
Priority to PCT/FR2011/050039 priority patent/WO2011086314A1/en
Publication of FR2955206A1 publication Critical patent/FR2955206A1/en
Application granted granted Critical
Publication of FR2955206B1 publication Critical patent/FR2955206B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/04—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Silicon Polymers (AREA)

Abstract

La présente invention concerne des nanostructures permettant la connexion électrique entre deux objets solides qui comprennent un nanotube de silicium répondant à la formule générale (I) ci-dessous : où n ≥ 1 ; p ≥ 10 ; au moins un des -R1 est une liaison entre le nanotube et le premier objet solide ; au moins un des groupes -R2 est une liaison entre le nanotube et le deuxième objet solide ; et où le nanotube est rempli, en tout ou partie, par des atomes de silicium ou de carbone capables de former des liaisons avec un ou plusieurs des atomes de silicium du nanotube.The present invention relates to nanostructures allowing the electrical connection between two solid objects which comprise a silicon nanotube corresponding to the general formula (I) below: where n ≥ 1; p ≥ 10; at least one of -R1 is a bond between the nanotube and the first solid object; at least one of the -R2 groups is a bond between the nanotube and the second solid object; and where the nanotube is filled, in whole or in part, with silicon or carbon atoms capable of forming bonds with one or more of the silicon atoms of the nanotube.

FR1050208A 2010-01-13 2010-01-13 USE OF NANOSTRUCTURES BASED ON HIGHLY COORDINATED SILICON NANOTUBES AS ELECTRICALLY CONDUCTIVE ELEMENTS Active FR2955206B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1050208A FR2955206B1 (en) 2010-01-13 2010-01-13 USE OF NANOSTRUCTURES BASED ON HIGHLY COORDINATED SILICON NANOTUBES AS ELECTRICALLY CONDUCTIVE ELEMENTS
PCT/FR2011/050039 WO2011086314A1 (en) 2010-01-13 2011-01-11 Use of nanostructures made of highly coordinated silicon nanotubes as electric conductor elements

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1050208A FR2955206B1 (en) 2010-01-13 2010-01-13 USE OF NANOSTRUCTURES BASED ON HIGHLY COORDINATED SILICON NANOTUBES AS ELECTRICALLY CONDUCTIVE ELEMENTS

Publications (2)

Publication Number Publication Date
FR2955206A1 FR2955206A1 (en) 2011-07-15
FR2955206B1 true FR2955206B1 (en) 2012-02-17

Family

ID=42283998

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1050208A Active FR2955206B1 (en) 2010-01-13 2010-01-13 USE OF NANOSTRUCTURES BASED ON HIGHLY COORDINATED SILICON NANOTUBES AS ELECTRICALLY CONDUCTIVE ELEMENTS

Country Status (2)

Country Link
FR (1) FR2955206B1 (en)
WO (1) WO2011086314A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3104173B1 (en) 2019-12-06 2023-07-21 Centre Nat Rech Scient : Method for producing silicon and/or germanium nanoclusters having a permanent electric and/or magnetic dipole moment

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6329070B1 (en) 1999-12-09 2001-12-11 Cornell Research Foundation, Inc. Fabrication of periodic surface structures with nanometer-scale spacings

Also Published As

Publication number Publication date
WO2011086314A1 (en) 2011-07-21
FR2955206A1 (en) 2011-07-15

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