FR2914782B1 - Procede de gravure profonde anisotrope de silicium - Google Patents
Procede de gravure profonde anisotrope de siliciumInfo
- Publication number
- FR2914782B1 FR2914782B1 FR0754270A FR0754270A FR2914782B1 FR 2914782 B1 FR2914782 B1 FR 2914782B1 FR 0754270 A FR0754270 A FR 0754270A FR 0754270 A FR0754270 A FR 0754270A FR 2914782 B1 FR2914782 B1 FR 2914782B1
- Authority
- FR
- France
- Prior art keywords
- anisotropid
- silicon
- etching process
- deep etching
- deep
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 238000005530 etching Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
- B81C1/00619—Forming high aspect ratio structures having deep steep walls
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/03—Static structures
- B81B2203/0323—Grooves
- B81B2203/033—Trenches
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0111—Bulk micromachining
- B81C2201/0112—Bosch process
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0754270A FR2914782B1 (fr) | 2007-04-04 | 2007-04-04 | Procede de gravure profonde anisotrope de silicium |
US12/080,706 US8012365B2 (en) | 2007-04-04 | 2008-04-03 | Deep anisotropic silicon etch method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0754270A FR2914782B1 (fr) | 2007-04-04 | 2007-04-04 | Procede de gravure profonde anisotrope de silicium |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2914782A1 FR2914782A1 (fr) | 2008-10-10 |
FR2914782B1 true FR2914782B1 (fr) | 2009-06-12 |
Family
ID=38325189
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0754270A Expired - Fee Related FR2914782B1 (fr) | 2007-04-04 | 2007-04-04 | Procede de gravure profonde anisotrope de silicium |
Country Status (2)
Country | Link |
---|---|
US (1) | US8012365B2 (fr) |
FR (1) | FR2914782B1 (fr) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2914782B1 (fr) * | 2007-04-04 | 2009-06-12 | St Microelectronics Sa | Procede de gravure profonde anisotrope de silicium |
US8232171B2 (en) * | 2009-09-17 | 2012-07-31 | International Business Machines Corporation | Structure with isotropic silicon recess profile in nanoscale dimensions |
US20120211805A1 (en) | 2011-02-22 | 2012-08-23 | Bernhard Winkler | Cavity structures for mems devices |
DE102012206531B4 (de) * | 2012-04-17 | 2015-09-10 | Infineon Technologies Ag | Verfahren zur Erzeugung einer Kavität innerhalb eines Halbleitersubstrats |
US9159574B2 (en) * | 2012-08-27 | 2015-10-13 | Applied Materials, Inc. | Method of silicon etch for trench sidewall smoothing |
US8987139B2 (en) * | 2013-01-29 | 2015-03-24 | Applied Materials, Inc. | Method of patterning a low-k dielectric film |
US9136136B2 (en) | 2013-09-19 | 2015-09-15 | Infineon Technologies Dresden Gmbh | Method and structure for creating cavities with extreme aspect ratios |
RU2539767C1 (ru) * | 2013-10-03 | 2015-01-27 | Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Национальный исследовательский университет "МИЭТ" | Способ изготовления глубокопрофилированных кремниевых структур |
US9054050B2 (en) * | 2013-11-06 | 2015-06-09 | Tokyo Electron Limited | Method for deep silicon etching using gas pulsing |
RU2572288C1 (ru) * | 2014-09-30 | 2016-01-10 | Открытое акционерное общество "Научно-исследовательский институт физических измерений" | Способ изготовления глубокопрофилированных кремниевых структур |
RU2691758C1 (ru) * | 2018-08-17 | 2019-06-18 | Федеральное государственное бюджетное учреждение науки Физико-технологический институт имени К.А. Валиева Российской академии наук (ФТИАН им К.А. Валиева РАН) | Способ анизотропного плазменного травления кремниевых микроструктур в циклическом двухшаговом процессе окисление-травление |
CN113800466B (zh) * | 2021-09-23 | 2023-08-29 | 华东光电集成器件研究所 | 一种mems悬浮结构的深硅刻蚀方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2669460B2 (ja) * | 1986-10-29 | 1997-10-27 | 株式会社日立製作所 | エツチング方法 |
US4867841A (en) * | 1987-07-16 | 1989-09-19 | Texas Instruments Incorporated | Method for etch of polysilicon film |
DE19706682C2 (de) * | 1997-02-20 | 1999-01-14 | Bosch Gmbh Robert | Anisotropes fluorbasiertes Plasmaätzverfahren für Silizium |
US20010045354A1 (en) * | 1997-06-02 | 2001-11-29 | Yiqiong Wang | Method of etching high aspect ratio openings in silicon |
JP2004087738A (ja) * | 2002-08-26 | 2004-03-18 | Tokyo Electron Ltd | Siエッチング方法 |
FR2914782B1 (fr) * | 2007-04-04 | 2009-06-12 | St Microelectronics Sa | Procede de gravure profonde anisotrope de silicium |
-
2007
- 2007-04-04 FR FR0754270A patent/FR2914782B1/fr not_active Expired - Fee Related
-
2008
- 2008-04-03 US US12/080,706 patent/US8012365B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
FR2914782A1 (fr) | 2008-10-10 |
US20080293250A1 (en) | 2008-11-27 |
US8012365B2 (en) | 2011-09-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20151231 |