FR2913523B1 - Disposistif de memorisation de donnees multi-niveaux a materiau a changement de phase - Google Patents

Disposistif de memorisation de donnees multi-niveaux a materiau a changement de phase

Info

Publication number
FR2913523B1
FR2913523B1 FR0753739A FR0753739A FR2913523B1 FR 2913523 B1 FR2913523 B1 FR 2913523B1 FR 0753739 A FR0753739 A FR 0753739A FR 0753739 A FR0753739 A FR 0753739A FR 2913523 B1 FR2913523 B1 FR 2913523B1
Authority
FR
France
Prior art keywords
storage device
data storage
phase change
change material
level data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0753739A
Other languages
English (en)
Other versions
FR2913523A1 (fr
Inventor
Serge Gidon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR0753739A priority Critical patent/FR2913523B1/fr
Priority to US12/036,818 priority patent/US7943923B2/en
Priority to EP08102287A priority patent/EP1968117B1/fr
Priority to JP2008058425A priority patent/JP5313522B2/ja
Publication of FR2913523A1 publication Critical patent/FR2913523A1/fr
Application granted granted Critical
Publication of FR2913523B1 publication Critical patent/FR2913523B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • H10B63/845—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays the switching components being connected to a common vertical conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/71—Three dimensional array

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
FR0753739A 2007-03-09 2007-03-09 Disposistif de memorisation de donnees multi-niveaux a materiau a changement de phase Expired - Fee Related FR2913523B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR0753739A FR2913523B1 (fr) 2007-03-09 2007-03-09 Disposistif de memorisation de donnees multi-niveaux a materiau a changement de phase
US12/036,818 US7943923B2 (en) 2007-03-09 2008-02-25 Multi-level data memorisation device with phase change material
EP08102287A EP1968117B1 (fr) 2007-03-09 2008-03-05 Dispositif de mémorisation de données multi-niveaux à matériau à changement de phase
JP2008058425A JP5313522B2 (ja) 2007-03-09 2008-03-07 相変化材料を有するマルチレベル・データ記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0753739A FR2913523B1 (fr) 2007-03-09 2007-03-09 Disposistif de memorisation de donnees multi-niveaux a materiau a changement de phase

Publications (2)

Publication Number Publication Date
FR2913523A1 FR2913523A1 (fr) 2008-09-12
FR2913523B1 true FR2913523B1 (fr) 2009-06-05

Family

ID=38544329

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0753739A Expired - Fee Related FR2913523B1 (fr) 2007-03-09 2007-03-09 Disposistif de memorisation de donnees multi-niveaux a materiau a changement de phase

Country Status (4)

Country Link
US (1) US7943923B2 (fr)
EP (1) EP1968117B1 (fr)
JP (1) JP5313522B2 (fr)
FR (1) FR2913523B1 (fr)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8937292B2 (en) 2011-08-15 2015-01-20 Unity Semiconductor Corporation Vertical cross point arrays for ultra high density memory applications
US20130082232A1 (en) 2011-09-30 2013-04-04 Unity Semiconductor Corporation Multi Layered Conductive Metal Oxide Structures And Methods For Facilitating Enhanced Performance Characteristics Of Two Terminal Memory Cells
WO2007133837A2 (fr) 2006-05-12 2007-11-22 Advanced Technology Materials, Inc. DÉpÔt À basse tempÉrature de matÉriaux À mÉmoire de changement de phase
KR101097112B1 (ko) 2006-11-02 2011-12-22 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 금속 박막의 ｃｖｄ/ａｌｄ용으로 유용한 안티몬 및 게르마늄 착체
JP5091491B2 (ja) * 2007-01-23 2012-12-05 株式会社東芝 不揮発性半導体記憶装置
KR20090055874A (ko) * 2007-11-29 2009-06-03 삼성전자주식회사 비휘발성 메모리 소자 및 그 제조 방법
US20090215225A1 (en) 2008-02-24 2009-08-27 Advanced Technology Materials, Inc. Tellurium compounds useful for deposition of tellurium containing materials
JP5288877B2 (ja) * 2008-05-09 2013-09-11 株式会社東芝 不揮発性半導体記憶装置
US20110180905A1 (en) * 2008-06-10 2011-07-28 Advanced Technology Materials, Inc. GeSbTe MATERIAL INCLUDING SUPERFLOW LAYER(S), AND USE OF Ge TO PREVENT INTERACTION OF Te FROM SbXTeY AND GeXTeY RESULTING IN HIGH Te CONTENT AND FILM CRYSTALLINITY
FR2935530B1 (fr) 2008-08-29 2012-05-04 Commissariat Energie Atomique Dispositif de memorisation de donnees a adressage optique.
KR100998256B1 (ko) 2008-12-30 2010-12-03 서울대학교산학협력단 수직형 비휘발성 메모리 소자 및 그 제조방법
US8410468B2 (en) * 2009-07-02 2013-04-02 Advanced Technology Materials, Inc. Hollow GST structure with dielectric fill
US8716780B2 (en) * 2009-11-06 2014-05-06 Rambus Inc. Three-dimensional memory array stacking structure
TW201132787A (en) 2010-03-26 2011-10-01 Advanced Tech Materials Germanium antimony telluride materials and devices incorporating same
KR20110123005A (ko) 2010-05-06 2011-11-14 삼성전자주식회사 저항체를 이용한 비휘발성 메모리 장치 및 그 제조 방법
WO2011146913A2 (fr) 2010-05-21 2011-11-24 Advanced Technology Materials, Inc. Matériaux à base de tellurure de germanium et d'antimoine et dispositifs les incorporant
US8129789B2 (en) * 2010-05-28 2012-03-06 Infineon Technologies Ag Current control using thermally matched resistors
US8187932B2 (en) * 2010-10-15 2012-05-29 Sandisk 3D Llc Three dimensional horizontal diode non-volatile memory array and method of making thereof
US8399874B2 (en) 2011-01-17 2013-03-19 Snu R&Db Foundation Vertical nonvolatile memory device including a selective diode
KR102117124B1 (ko) 2012-04-30 2020-05-29 엔테그리스, 아이엔씨. 유전체 물질로 중심-충전된 상 변화 합금을 포함하는 상 변화 메모리 구조체
US9640757B2 (en) 2012-10-30 2017-05-02 Entegris, Inc. Double self-aligned phase change memory device structure
US9337210B2 (en) 2013-08-12 2016-05-10 Micron Technology, Inc. Vertical ferroelectric field effect transistor constructions, constructions comprising a pair of vertical ferroelectric field effect transistors, vertical strings of ferroelectric field effect transistors, and vertical strings of laterally opposing pairs of vertical ferroelectric field effect transistors
US9263577B2 (en) 2014-04-24 2016-02-16 Micron Technology, Inc. Ferroelectric field effect transistors, pluralities of ferroelectric field effect transistors arrayed in row lines and column lines, and methods of forming a plurality of ferroelectric field effect transistors
US9472560B2 (en) 2014-06-16 2016-10-18 Micron Technology, Inc. Memory cell and an array of memory cells
US9159829B1 (en) 2014-10-07 2015-10-13 Micron Technology, Inc. Recessed transistors containing ferroelectric material
US9305929B1 (en) 2015-02-17 2016-04-05 Micron Technology, Inc. Memory cells
US10134982B2 (en) * 2015-07-24 2018-11-20 Micron Technology, Inc. Array of cross point memory cells
US9853211B2 (en) 2015-07-24 2017-12-26 Micron Technology, Inc. Array of cross point memory cells individually comprising a select device and a programmable device
US10396145B2 (en) 2017-01-12 2019-08-27 Micron Technology, Inc. Memory cells comprising ferroelectric material and including current leakage paths having different total resistances
FR3079656B1 (fr) * 2018-03-27 2020-11-27 Commissariat Energie Atomique Memoire resistive 3d
US10700128B1 (en) * 2018-12-21 2020-06-30 Micron Technology, Inc. Three-dimensional memory array
US11170834B2 (en) 2019-07-10 2021-11-09 Micron Technology, Inc. Memory cells and methods of forming a capacitor including current leakage paths having different total resistances

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6635914B2 (en) * 2000-09-08 2003-10-21 Axon Technologies Corp. Microelectronic programmable device and methods of forming and programming the same
KR100505104B1 (ko) 2002-04-30 2005-07-29 삼성전자주식회사 자기 램 셀들, 그 구조체들 및 그 구동방법
US6917532B2 (en) * 2002-06-21 2005-07-12 Hewlett-Packard Development Company, L.P. Memory storage device with segmented column line array
JP4509467B2 (ja) * 2002-11-08 2010-07-21 シャープ株式会社 不揮発可変抵抗素子、及び記憶装置
US6839263B2 (en) * 2003-02-05 2005-01-04 Hewlett-Packard Development Company, L.P. Memory array with continuous current path through multiple lines
US7227170B2 (en) * 2003-03-10 2007-06-05 Energy Conversion Devices, Inc. Multiple bit chalcogenide storage device
US20060006472A1 (en) * 2003-06-03 2006-01-12 Hai Jiang Phase change memory with extra-small resistors
US6927410B2 (en) * 2003-09-04 2005-08-09 Silicon Storage Technology, Inc. Memory device with discrete layers of phase change memory material
US7473921B2 (en) * 2006-06-07 2009-01-06 International Business Machines Corporation Nonvolatile memory cell with concentric phase change material formed around a pillar arrangement
US7560723B2 (en) * 2006-08-29 2009-07-14 Micron Technology, Inc. Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
JP2008160004A (ja) * 2006-12-26 2008-07-10 Toshiba Corp 半導体記憶装置及びその製造方法
JP5091491B2 (ja) * 2007-01-23 2012-12-05 株式会社東芝 不揮発性半導体記憶装置
US7679163B2 (en) * 2007-05-14 2010-03-16 Industrial Technology Research Institute Phase-change memory element

Also Published As

Publication number Publication date
US7943923B2 (en) 2011-05-17
US20080217600A1 (en) 2008-09-11
EP1968117A2 (fr) 2008-09-10
JP5313522B2 (ja) 2013-10-09
JP2008252088A (ja) 2008-10-16
FR2913523A1 (fr) 2008-09-12
EP1968117A3 (fr) 2010-09-01
EP1968117B1 (fr) 2012-05-02

Similar Documents

Publication Publication Date Title
FR2913523B1 (fr) Disposistif de memorisation de donnees multi-niveaux a materiau a changement de phase
EP2183747A4 (fr) Mémoire avec commande de données
DE602007010624D1 (de) Phasenwechsel-Speichervorrichtung für Multibit-Speicherung
EP2342712A4 (fr) Système de mémorisation de données de masse avec des modules de mémoire non volatile
DE602006012825D1 (de) Phasenwechsel-Speichervorrichtung
TWI367584B (en) Phase-change memory element
EP2212794A4 (fr) Dispositif de mémoire auxiliaire de données extensible
EP2118893A4 (fr) Élément de mémoire magnétique non volatile pourvu d'une couche à gradient
GB2449454B (en) Control data modification within a cache memory
DE602008002277D1 (de) Nicht flüchtiger Speicher mit Schnellschreiben
GB0812843D0 (en) Data storage devices
EP2140371A4 (fr) Localisation itérative d'une position correspondant à un temps d'accès souhaité
ZA201103704B (en) Data storage devices
DK2170617T3 (da) Validering af integriteten af data i en ikke-flygtig hukommelse
FR2916560B1 (fr) Cryptoprocesseur a protection de donnees amelioree
FR2880444B1 (fr) Dispositif de stockage de donnees
EP2559033A4 (fr) Programmation de mémoire utilisant une largeur variable de données
DE112008004270A5 (de) Ausgeben gesicherter Medien unter Verwendung einer tragbaren Speichervorrichtung
FR2921405B1 (fr) Dispositif de store
DE502007004476D1 (de) Objektlagervorrichtung mit Schüttelfunktion
GB0610015D0 (en) Data storage device
GB0816640D0 (en) Data storage device
EP2232413A4 (fr) Dispositif de support de données
DK2000023T3 (da) Dataopsamlingsanordning
TWI317787B (en) Dual-interface data storage apparatus

Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20141128