FR2888990B1 - Dispositif microelectronique dote de transistors surmontes d'une couche piezoelectrique - Google Patents

Dispositif microelectronique dote de transistors surmontes d'une couche piezoelectrique

Info

Publication number
FR2888990B1
FR2888990B1 FR0552279A FR0552279A FR2888990B1 FR 2888990 B1 FR2888990 B1 FR 2888990B1 FR 0552279 A FR0552279 A FR 0552279A FR 0552279 A FR0552279 A FR 0552279A FR 2888990 B1 FR2888990 B1 FR 2888990B1
Authority
FR
France
Prior art keywords
piezoelectric layer
microelectronic device
transistors surrounded
transistors
surrounded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR0552279A
Other languages
English (en)
Other versions
FR2888990A1 (fr
Inventor
Jerome Lolivier
Maud Vinet
Thierry Poiroux
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR0552279A priority Critical patent/FR2888990B1/fr
Priority to US11/996,406 priority patent/US7968945B2/en
Priority to EP06792540A priority patent/EP1908113A1/fr
Priority to PCT/EP2006/064491 priority patent/WO2007010029A1/fr
Publication of FR2888990A1 publication Critical patent/FR2888990A1/fr
Application granted granted Critical
Publication of FR2888990B1 publication Critical patent/FR2888990B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/516—Insulating materials associated therewith with at least one ferroelectric layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
FR0552279A 2005-07-22 2005-07-22 Dispositif microelectronique dote de transistors surmontes d'une couche piezoelectrique Active FR2888990B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR0552279A FR2888990B1 (fr) 2005-07-22 2005-07-22 Dispositif microelectronique dote de transistors surmontes d'une couche piezoelectrique
US11/996,406 US7968945B2 (en) 2005-07-22 2006-06-21 Microelectronic device provided with transistors coated with a piezoelectric layer
EP06792540A EP1908113A1 (fr) 2005-07-22 2006-07-21 Dispositif microelectronique dote de transistors surmontes d'une couche piezoelectrique
PCT/EP2006/064491 WO2007010029A1 (fr) 2005-07-22 2006-07-21 Dispositif microelectronique dote de transistors surmontes d'une couche piezoelectrique

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0552279A FR2888990B1 (fr) 2005-07-22 2005-07-22 Dispositif microelectronique dote de transistors surmontes d'une couche piezoelectrique

Publications (2)

Publication Number Publication Date
FR2888990A1 FR2888990A1 (fr) 2007-01-26
FR2888990B1 true FR2888990B1 (fr) 2007-09-07

Family

ID=36586101

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0552279A Active FR2888990B1 (fr) 2005-07-22 2005-07-22 Dispositif microelectronique dote de transistors surmontes d'une couche piezoelectrique

Country Status (4)

Country Link
US (1) US7968945B2 (fr)
EP (1) EP1908113A1 (fr)
FR (1) FR2888990B1 (fr)
WO (1) WO2007010029A1 (fr)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2916305B1 (fr) 2007-05-15 2009-10-23 Commissariat Energie Atomique Dispositif a transistor a canal contraint.
FR2945669B1 (fr) * 2009-05-14 2011-12-30 Commissariat Energie Atomique Transistor organique a effet de champ
US9030533B2 (en) * 2009-11-06 2015-05-12 Sony Corporation Stereoscopic overlay offset creation and editing
US20110248322A1 (en) * 2010-04-12 2011-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. Piezoelectric Gate-Induced Strain
CN102790084B (zh) * 2011-05-16 2016-03-16 中国科学院上海微***与信息技术研究所 锗和iii-v混合共平面的soi半导体结构及其制备方法
CN102790054B (zh) * 2011-05-16 2015-09-16 中国科学院上海微***与信息技术研究所 锗和iii-v混合共平面的半导体结构及其制备方法
KR20130014200A (ko) * 2011-07-29 2013-02-07 삼성전자주식회사 저항 변화 물질을 포함하는 반도체 소자 및 그 제조 방법
US8841818B2 (en) * 2011-08-12 2014-09-23 Massachusetts Institute Of Technology Piezoelectric electromechanical devices
JP2013179235A (ja) * 2012-02-29 2013-09-09 Toshiba Corp 半導体装置
US20140084234A1 (en) * 2012-09-27 2014-03-27 Apple Inc. Post manufacturing strain manipulation in semiconductor devices
US9058868B2 (en) 2012-12-19 2015-06-16 International Business Machines Corporation Piezoelectronic memory
US9064959B2 (en) * 2013-03-13 2015-06-23 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for forming a CMOS device
US20140264632A1 (en) * 2013-03-18 2014-09-18 Globalfoundries Inc. Semiconductor structure including a transistor having a layer of a stress-creating material and method for the formation thereof
US9941472B2 (en) 2014-03-10 2018-04-10 International Business Machines Corporation Piezoelectronic device with novel force amplification
US9251884B2 (en) 2014-03-24 2016-02-02 International Business Machines Corporation Non-volatile, piezoelectronic memory based on piezoresistive strain produced by piezoelectric remanence
US9287489B1 (en) 2014-10-31 2016-03-15 International Business Machines Corporation Piezoelectronic transistor with co-planar common and gate electrodes
CN105974637B (zh) * 2016-07-22 2019-03-12 京东方科技集团股份有限公司 阵列基板及其制作方法、显示装置及其触摸位置检测方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01120072A (ja) * 1987-11-02 1989-05-12 Nec Corp アバランシェ注入型電界効果トランジスタ
JPH0487376A (ja) * 1990-07-31 1992-03-19 Clarion Co Ltd 圧力センサ
US5666305A (en) 1993-03-29 1997-09-09 Olympus Optical Co., Ltd. Method of driving ferroelectric gate transistor memory cell
US5883419A (en) 1994-11-17 1999-03-16 Electronics And Telecommunications Research Institute Ultra-thin MO-C film transistor
JPH08181288A (ja) * 1994-12-21 1996-07-12 Nippon Telegr & Teleph Corp <Ntt> 強誘電体記憶装置およびその製造方法
JP2000183295A (ja) * 1998-12-16 2000-06-30 Matsushita Electronics Industry Corp 半導体記憶装置及びその製造方法
DE19931124C1 (de) * 1999-07-06 2001-02-15 Infineon Technologies Ag Speicherzellenanordnung mit einem ferroelektrischen Transistor
DE19946437A1 (de) * 1999-09-28 2001-04-12 Infineon Technologies Ag Ferroelektrischer Transistor
JP4557508B2 (ja) * 2003-06-16 2010-10-06 パナソニック株式会社 半導体装置
US7586158B2 (en) * 2005-07-07 2009-09-08 Infineon Technologies Ag Piezoelectric stress liner for bulk and SOI
US7670938B2 (en) * 2006-05-02 2010-03-02 GlobalFoundries, Inc. Methods of forming contact openings

Also Published As

Publication number Publication date
US7968945B2 (en) 2011-06-28
WO2007010029A1 (fr) 2007-01-25
US20080290384A1 (en) 2008-11-27
FR2888990A1 (fr) 2007-01-26
EP1908113A1 (fr) 2008-04-09

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