FR2887082B1 - Laser a semi-conducteur a tres faible bruit - Google Patents
Laser a semi-conducteur a tres faible bruitInfo
- Publication number
- FR2887082B1 FR2887082B1 FR0505937A FR0505937A FR2887082B1 FR 2887082 B1 FR2887082 B1 FR 2887082B1 FR 0505937 A FR0505937 A FR 0505937A FR 0505937 A FR0505937 A FR 0505937A FR 2887082 B1 FR2887082 B1 FR 2887082B1
- Authority
- FR
- France
- Prior art keywords
- semiconductor laser
- low noise
- noise
- low
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0064—Anti-reflection components, e.g. optical isolators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0651—Mode control
- H01S5/0653—Mode suppression, e.g. specific multimode
- H01S5/0654—Single longitudinal mode emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1039—Details on the cavity length
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1071—Ring-lasers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0505937A FR2887082B1 (fr) | 2005-06-10 | 2005-06-10 | Laser a semi-conducteur a tres faible bruit |
PCT/EP2006/062975 WO2006131536A1 (fr) | 2005-06-10 | 2006-06-07 | Laser a semi-conducteur a tres faible bruit |
JP2008515215A JP2008543101A (ja) | 2005-06-10 | 2006-06-07 | 超低雑音半導体レーザ |
US11/917,148 US20090225800A1 (en) | 2005-06-10 | 2006-06-07 | Very low-noise semiconductor laser |
AU2006256749A AU2006256749A1 (en) | 2005-06-10 | 2006-06-07 | Very low-noise semi-conductor laser |
EP06777276A EP1889340A1 (fr) | 2005-06-10 | 2006-06-07 | Laser a semi-conducteur a tres faible bruit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0505937A FR2887082B1 (fr) | 2005-06-10 | 2005-06-10 | Laser a semi-conducteur a tres faible bruit |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2887082A1 FR2887082A1 (fr) | 2006-12-15 |
FR2887082B1 true FR2887082B1 (fr) | 2009-04-17 |
Family
ID=35749315
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0505937A Active FR2887082B1 (fr) | 2005-06-10 | 2005-06-10 | Laser a semi-conducteur a tres faible bruit |
Country Status (6)
Country | Link |
---|---|
US (1) | US20090225800A1 (fr) |
EP (1) | EP1889340A1 (fr) |
JP (1) | JP2008543101A (fr) |
AU (1) | AU2006256749A1 (fr) |
FR (1) | FR2887082B1 (fr) |
WO (1) | WO2006131536A1 (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5184167B2 (ja) * | 2008-03-24 | 2013-04-17 | 古河電気工業株式会社 | リング型レーザ装置 |
FR2945348B1 (fr) | 2009-05-07 | 2011-05-13 | Thales Sa | Procede d'identification d'une scene a partir d'images polarisees multi longueurs d'onde |
JP5350940B2 (ja) * | 2009-08-19 | 2013-11-27 | 浜松ホトニクス株式会社 | レーザモジュール |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2560395B1 (fr) * | 1984-02-24 | 1986-11-21 | Thomson Csf | Coupleur optoelectronique pour fibres optiques a prelevement reglable et systeme de transmissions bidirectionnelles d'informations mettant en oeuvre un tel coupleur |
FR2674391B1 (fr) * | 1991-03-19 | 1993-06-04 | Thomson Csf | Dispositif d'intercorrelation large bande et dispositif mettant en óoeuvre ce procede. |
FR2674708B1 (fr) * | 1991-03-29 | 1997-01-24 | Thomson Csf | Filtre transverse electrique a fonctionnement optique. |
FR2699295B1 (fr) * | 1992-12-15 | 1995-01-06 | Thomson Csf | Dispositif de traitement optique de signaux électriques. |
FR2779579B1 (fr) * | 1998-06-09 | 2000-08-25 | Thomson Csf | Dispositif de commande optique pour l'emission et la reception d'un radar large bande |
US6285702B1 (en) * | 1999-03-05 | 2001-09-04 | Coherent, Inc. | High-power external-cavity optically-pumped semiconductor laser |
US20060029120A1 (en) * | 2000-03-06 | 2006-02-09 | Novalux Inc. | Coupled cavity high power semiconductor laser |
FR2819061B1 (fr) * | 2000-12-28 | 2003-04-11 | Thomson Csf | Dispositif de controle de polarisation dans une liaison optique |
FR2833786B1 (fr) * | 2001-12-18 | 2004-02-13 | Thales Sa | Systeme de transmission optique en propagation libre |
US7656924B2 (en) * | 2002-04-05 | 2010-02-02 | The Furukawa Electric Co., Ltd. | Surface emitting laser, and transceiver, optical transceiver, and optical communication system employing the surface emitting laser |
US7197059B2 (en) * | 2002-05-08 | 2007-03-27 | Melles Griot, Inc. | Short wavelength diode-pumped solid-state laser |
-
2005
- 2005-06-10 FR FR0505937A patent/FR2887082B1/fr active Active
-
2006
- 2006-06-07 US US11/917,148 patent/US20090225800A1/en not_active Abandoned
- 2006-06-07 JP JP2008515215A patent/JP2008543101A/ja active Pending
- 2006-06-07 WO PCT/EP2006/062975 patent/WO2006131536A1/fr active Application Filing
- 2006-06-07 EP EP06777276A patent/EP1889340A1/fr not_active Withdrawn
- 2006-06-07 AU AU2006256749A patent/AU2006256749A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
AU2006256749A1 (en) | 2006-12-14 |
US20090225800A1 (en) | 2009-09-10 |
JP2008543101A (ja) | 2008-11-27 |
FR2887082A1 (fr) | 2006-12-15 |
EP1889340A1 (fr) | 2008-02-20 |
WO2006131536A1 (fr) | 2006-12-14 |
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