FR2882996B1 - MICROMECHANICAL COMPONENT AND METHOD OF MANUFACTURING THE SAME - Google Patents

MICROMECHANICAL COMPONENT AND METHOD OF MANUFACTURING THE SAME

Info

Publication number
FR2882996B1
FR2882996B1 FR0650366A FR0650366A FR2882996B1 FR 2882996 B1 FR2882996 B1 FR 2882996B1 FR 0650366 A FR0650366 A FR 0650366A FR 0650366 A FR0650366 A FR 0650366A FR 2882996 B1 FR2882996 B1 FR 2882996B1
Authority
FR
France
Prior art keywords
manufacturing
same
micromechanical component
micromechanical
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0650366A
Other languages
French (fr)
Other versions
FR2882996A1 (en
Inventor
Franz Larmer
Silvia Kronmuller
Christina Leinenbach
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of FR2882996A1 publication Critical patent/FR2882996A1/en
Application granted granted Critical
Publication of FR2882996B1 publication Critical patent/FR2882996B1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0109—Bridges
FR0650366A 2005-02-03 2006-02-02 MICROMECHANICAL COMPONENT AND METHOD OF MANUFACTURING THE SAME Expired - Fee Related FR2882996B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102005004878.1A DE102005004878B4 (en) 2005-02-03 2005-02-03 Micromechanical capacitive pressure sensor and corresponding manufacturing method

Publications (2)

Publication Number Publication Date
FR2882996A1 FR2882996A1 (en) 2006-09-15
FR2882996B1 true FR2882996B1 (en) 2015-12-25

Family

ID=36709616

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0650366A Expired - Fee Related FR2882996B1 (en) 2005-02-03 2006-02-02 MICROMECHANICAL COMPONENT AND METHOD OF MANUFACTURING THE SAME

Country Status (4)

Country Link
US (1) US7262071B2 (en)
JP (1) JP5032030B2 (en)
DE (1) DE102005004878B4 (en)
FR (1) FR2882996B1 (en)

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US7880247B2 (en) * 2003-12-29 2011-02-01 Vladimir Vaganov Semiconductor input control device
US7772657B2 (en) * 2004-12-28 2010-08-10 Vladimir Vaganov Three-dimensional force input control device and fabrication
US8350345B2 (en) 2003-12-29 2013-01-08 Vladimir Vaganov Three-dimensional input control device
US9034666B2 (en) 2003-12-29 2015-05-19 Vladimir Vaganov Method of testing of MEMS devices on a wafer level
US7554167B2 (en) * 2003-12-29 2009-06-30 Vladimir Vaganov Three-dimensional analog input control device
DE102005047081B4 (en) * 2005-09-30 2019-01-31 Robert Bosch Gmbh Process for the plasma-free etching of silicon with the etching gas ClF3 or XeF2
WO2007139730A2 (en) * 2006-05-22 2007-12-06 Vladimir Vaganov Semiconductor input control device
WO2007139695A2 (en) * 2006-05-24 2007-12-06 Vladimir Vaganov Force input control device and method of fabrication
DE102006024668A1 (en) * 2006-05-26 2007-11-29 Robert Bosch Gmbh Micromechanical component e.g. sensor, for e.g. hearing aid`s microphone, has counter unit with passage hole in rear volume formed by hollow space below unit, where hollow space contacts upper side of membrane below counter unit via opening
WO2008103632A2 (en) * 2007-02-20 2008-08-28 Qualcomm Mems Technologies, Inc. Equipment and methods for etching of mems
CN101652317B (en) * 2007-04-04 2012-12-12 高通Mems科技公司 Eliminate release etch attack by interface modification in sacrificial layers
DE102007029414A1 (en) 2007-06-26 2009-01-08 Robert Bosch Gmbh Micromechanical capacitive pressure sensor e.g. differential pressure sensor, for measuring pressure of gas, has electrode laterally moving over another electrode for detecting pressure signals, and counter element opposite to diaphragm
WO2009036215A2 (en) * 2007-09-14 2009-03-19 Qualcomm Mems Technologies, Inc. Etching processes used in mems production
DE102007046017B4 (en) * 2007-09-26 2021-07-01 Robert Bosch Gmbh Sensor element
US8258591B2 (en) * 2008-01-16 2012-09-04 Solid State System Co., Ltd. Micro-electro-mechanical systems (MEMS) device
JP5473253B2 (en) * 2008-06-02 2014-04-16 キヤノン株式会社 Structure having a plurality of conductive regions and manufacturing method thereof
DE102009000071A1 (en) 2009-01-08 2010-07-15 Robert Bosch Gmbh Capacitive pressure sensor
JP5187441B2 (en) * 2009-04-24 2013-04-24 株式会社村田製作所 MEMS device and manufacturing method thereof
DE102010003488A1 (en) * 2010-03-30 2011-10-06 Ihp Gmbh - Innovations For High Performance Microelectronics / Leibniz-Institut Für Innovative Mikroelektronik Method for manufacturing integrated micro-electromechanical system component of flux sensor, involves achieving mechanical mobility of structural elements by removal of layer portions of layer stack of substrate rear side
KR101215919B1 (en) * 2010-08-13 2012-12-27 전자부품연구원 Capacitive type pressure sensor and method for fabricating the same
JP5778914B2 (en) * 2010-11-04 2015-09-16 キヤノン株式会社 Method for manufacturing electromechanical transducer
CN102539055B (en) * 2012-02-13 2014-04-09 苏州文智芯微***技术有限公司 High-temperature-resistant anti-corrosion pressure sensor based on smart-cut silicon isolation chip
US8748999B2 (en) 2012-04-20 2014-06-10 Taiwan Semiconductor Manufacturing Company, Ltd. Capacitive sensors and methods for forming the same
FR2999948B1 (en) 2012-12-20 2016-04-29 Aerogroupe MOBILE PLATFORM IN A CYLINDRICAL STRUCTURE
US8900975B2 (en) 2013-01-03 2014-12-02 International Business Machines Corporation Nanopore sensor device
US9216897B2 (en) * 2013-06-05 2015-12-22 Invensense, Inc. Capacitive sensing structure with embedded acoustic channels
WO2015099761A1 (en) * 2013-12-27 2015-07-02 Intel Corporation Selective etching for gate all around architectures
US9630837B1 (en) * 2016-01-15 2017-04-25 Taiwan Semiconductor Manufacturing Company Ltd. MEMS structure and manufacturing method thereof
US10554153B2 (en) * 2016-06-17 2020-02-04 Globalfoundries Singapore Pte. Ltd. MEMS device for harvesting sound energy and methods for fabricating same
JP6812880B2 (en) * 2017-03-29 2021-01-13 東京エレクトロン株式会社 Substrate processing method and storage medium.
JP2020151796A (en) * 2019-03-19 2020-09-24 株式会社リコー Method of manufacturing oscillator substrate and oscillator substrate
US11791155B2 (en) * 2020-08-27 2023-10-17 Applied Materials, Inc. Diffusion barriers for germanium

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JP2000022172A (en) * 1998-06-30 2000-01-21 Matsushita Electric Ind Co Ltd Converter and manufacture thereof
JP3362714B2 (en) * 1998-11-16 2003-01-07 株式会社豊田中央研究所 Capacitive pressure sensor and method of manufacturing the same
US6229190B1 (en) * 1998-12-18 2001-05-08 Maxim Integrated Products, Inc. Compensated semiconductor pressure sensor
JP4511739B2 (en) * 1999-01-15 2010-07-28 ザ リージェンツ オブ ザ ユニヴァーシティ オブ カリフォルニア Polycrystalline silicon germanium films for forming microelectromechanical systems
DE10024266B4 (en) * 2000-05-17 2010-06-17 Robert Bosch Gmbh Method for producing a micromechanical component
US6355498B1 (en) * 2000-08-11 2002-03-12 Agere Systems Guartian Corp. Thin film resonators fabricated on membranes created by front side releasing
DE10047500B4 (en) * 2000-09-26 2009-11-26 Robert Bosch Gmbh Micromechanical membrane and process for its preparation
DE10122765A1 (en) * 2001-05-10 2002-12-05 Campus Micro Technologies Gmbh Electroacoustic transducer for generating or detecting ultrasound, transducer array and method for manufacturing the transducer or transducer array
US6635519B2 (en) * 2002-01-10 2003-10-21 Agere Systems, Inc. Structurally supported thin film resonator and method of fabrication
DE10230252B4 (en) * 2002-07-04 2013-10-17 Robert Bosch Gmbh Process for the production of integrated microsystems
DE10239306B4 (en) * 2002-08-27 2006-08-31 Hahn-Schickard-Gesellschaft für angewandte Forschung e.V. Method for selectively connecting substrates

Also Published As

Publication number Publication date
US7262071B2 (en) 2007-08-28
JP2006212773A (en) 2006-08-17
FR2882996A1 (en) 2006-09-15
US20060170012A1 (en) 2006-08-03
JP5032030B2 (en) 2012-09-26
DE102005004878A1 (en) 2006-08-10
DE102005004878B4 (en) 2015-01-08

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