FR2875334B1 - Procede de fabrication d'un transistor realise en couches minces - Google Patents
Procede de fabrication d'un transistor realise en couches mincesInfo
- Publication number
- FR2875334B1 FR2875334B1 FR0409637A FR0409637A FR2875334B1 FR 2875334 B1 FR2875334 B1 FR 2875334B1 FR 0409637 A FR0409637 A FR 0409637A FR 0409637 A FR0409637 A FR 0409637A FR 2875334 B1 FR2875334 B1 FR 2875334B1
- Authority
- FR
- France
- Prior art keywords
- manufacturing
- thin film
- film transistor
- transistor
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0409637A FR2875334B1 (fr) | 2004-09-10 | 2004-09-10 | Procede de fabrication d'un transistor realise en couches minces |
| US11/223,089 US7491644B2 (en) | 2004-09-10 | 2005-09-09 | Manufacturing process for a transistor made of thin layers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0409637A FR2875334B1 (fr) | 2004-09-10 | 2004-09-10 | Procede de fabrication d'un transistor realise en couches minces |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2875334A1 FR2875334A1 (fr) | 2006-03-17 |
| FR2875334B1 true FR2875334B1 (fr) | 2007-02-23 |
Family
ID=34949630
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR0409637A Expired - Fee Related FR2875334B1 (fr) | 2004-09-10 | 2004-09-10 | Procede de fabrication d'un transistor realise en couches minces |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2875334B1 (fr) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61129872A (ja) * | 1984-11-29 | 1986-06-17 | Fujitsu Ltd | 半導体装置の製造方法 |
| EP0575280A3 (en) * | 1992-06-18 | 1995-10-04 | Ibm | Cmos transistor with two-layer inverse-t tungsten gate structure |
| JP3326644B2 (ja) * | 1993-11-16 | 2002-09-24 | ソニー株式会社 | シリコン系材料層の加工方法 |
| US6261934B1 (en) * | 1998-03-31 | 2001-07-17 | Texas Instruments Incorporated | Dry etch process for small-geometry metal gates over thin gate dielectric |
-
2004
- 2004-09-10 FR FR0409637A patent/FR2875334B1/fr not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| FR2875334A1 (fr) | 2006-03-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PLFP | Fee payment |
Year of fee payment: 13 |
|
| PLFP | Fee payment |
Year of fee payment: 14 |
|
| PLFP | Fee payment |
Year of fee payment: 15 |
|
| PLFP | Fee payment |
Year of fee payment: 16 |
|
| PLFP | Fee payment |
Year of fee payment: 17 |
|
| PLFP | Fee payment |
Year of fee payment: 18 |
|
| ST | Notification of lapse |
Effective date: 20230505 |