FR2857952B1 - Resonateur electromecanique et procede de fabrication d'un tel resonateur - Google Patents
Resonateur electromecanique et procede de fabrication d'un tel resonateurInfo
- Publication number
- FR2857952B1 FR2857952B1 FR0309106A FR0309106A FR2857952B1 FR 2857952 B1 FR2857952 B1 FR 2857952B1 FR 0309106 A FR0309106 A FR 0309106A FR 0309106 A FR0309106 A FR 0309106A FR 2857952 B1 FR2857952 B1 FR 2857952B1
- Authority
- FR
- France
- Prior art keywords
- resonator
- manufacturing
- electromechanical
- electromechanical resonator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H2009/02488—Vibration modes
- H03H2009/02511—Vertical, i.e. perpendicular to the substrate plane
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Micromachines (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0309106A FR2857952B1 (fr) | 2003-07-25 | 2003-07-25 | Resonateur electromecanique et procede de fabrication d'un tel resonateur |
US10/895,616 US7196451B2 (en) | 2003-07-25 | 2004-07-21 | Electromechanical resonator and method for fabricating such a resonator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0309106A FR2857952B1 (fr) | 2003-07-25 | 2003-07-25 | Resonateur electromecanique et procede de fabrication d'un tel resonateur |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2857952A1 FR2857952A1 (fr) | 2005-01-28 |
FR2857952B1 true FR2857952B1 (fr) | 2005-12-16 |
Family
ID=33561089
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0309106A Expired - Fee Related FR2857952B1 (fr) | 2003-07-25 | 2003-07-25 | Resonateur electromecanique et procede de fabrication d'un tel resonateur |
Country Status (2)
Country | Link |
---|---|
US (1) | US7196451B2 (fr) |
FR (1) | FR2857952B1 (fr) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004036803A1 (de) * | 2004-07-29 | 2006-03-23 | Robert Bosch Gmbh | Verfahren zum Ätzen einer Schicht auf einem Substrat |
JP2006217281A (ja) * | 2005-02-03 | 2006-08-17 | Toshiba Corp | 薄膜バルク音響装置の製造方法 |
DE102006032195A1 (de) * | 2006-07-12 | 2008-01-24 | Robert Bosch Gmbh | Verfahren zur Herstellung von MEMS-Strukturen |
FR2906238B1 (fr) | 2006-09-27 | 2008-12-19 | Commissariat Energie Atomique | Procede de realisation d'un composant electromecanique sur un substrat plan |
FR2925890B1 (fr) | 2007-12-28 | 2010-01-29 | Commissariat Energie Atomique | Procede de fabrication de composants mecaniques de structures mems ou nems en silicium monocristallin |
US9799757B2 (en) * | 2008-03-14 | 2017-10-24 | Nxp B.V. | PN junction chemical sensor |
DE112013006687B4 (de) | 2013-03-28 | 2022-02-17 | Intel Corporation | Resonanzkanaltransistor mit mehreren gates |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19625403A1 (de) * | 1996-06-25 | 1998-01-08 | Siemens Ag | Vorrichtung zum Messen magnetischer Feldstärken |
US6238946B1 (en) * | 1999-08-17 | 2001-05-29 | International Business Machines Corporation | Process for fabricating single crystal resonant devices that are compatible with integrated circuit processing |
US6275122B1 (en) * | 1999-08-17 | 2001-08-14 | International Business Machines Corporation | Encapsulated MEMS band-pass filter for integrated circuits |
FR2799305B1 (fr) * | 1999-10-05 | 2004-06-18 | St Microelectronics Sa | Procede de fabrication d'un dispositif semi-conducteur a grille enveloppante et dispositif obtenu |
US6469597B2 (en) * | 2001-03-05 | 2002-10-22 | Agilent Technologies, Inc. | Method of mass loading of thin film bulk acoustic resonators (FBAR) for creating resonators of different frequencies and apparatus embodying the method |
FR2823032B1 (fr) * | 2001-04-03 | 2003-07-11 | St Microelectronics Sa | Resonateur electromecanique a poutre vibrante |
KR100389927B1 (ko) * | 2001-06-07 | 2003-07-04 | 삼성전자주식회사 | 다층 배선 구조를 구비한 반도체 소자 및 그 제조 방법 |
KR100643974B1 (ko) * | 2002-03-11 | 2006-11-10 | 세이코 엡슨 가부시키가이샤 | 회전/이동 변환 액추에이터 |
US6877209B1 (en) * | 2002-08-28 | 2005-04-12 | Silicon Light Machines, Inc. | Method for sealing an active area of a surface acoustic wave device on a wafer |
-
2003
- 2003-07-25 FR FR0309106A patent/FR2857952B1/fr not_active Expired - Fee Related
-
2004
- 2004-07-21 US US10/895,616 patent/US7196451B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US7196451B2 (en) | 2007-03-27 |
FR2857952A1 (fr) | 2005-01-28 |
US20050199970A1 (en) | 2005-09-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20090331 |