FR2843487B1 - Procede d'elaboration de couche mince comprenant une etape de correction d'epaisseur par oxydation sacrificielle, et machine associee - Google Patents
Procede d'elaboration de couche mince comprenant une etape de correction d'epaisseur par oxydation sacrificielle, et machine associeeInfo
- Publication number
- FR2843487B1 FR2843487B1 FR0210209A FR0210209A FR2843487B1 FR 2843487 B1 FR2843487 B1 FR 2843487B1 FR 0210209 A FR0210209 A FR 0210209A FR 0210209 A FR0210209 A FR 0210209A FR 2843487 B1 FR2843487 B1 FR 2843487B1
- Authority
- FR
- France
- Prior art keywords
- thin layer
- correction step
- sacrificial oxidation
- thickness correction
- associated machine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (11)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0210209A FR2843487B1 (fr) | 2002-08-12 | 2002-08-12 | Procede d'elaboration de couche mince comprenant une etape de correction d'epaisseur par oxydation sacrificielle, et machine associee |
US10/637,094 US20040087042A1 (en) | 2002-08-12 | 2003-08-06 | Method and apparatus for adjusting the thickness of a layer of semiconductor material |
US10/637,078 US6908774B2 (en) | 2002-08-12 | 2003-08-06 | Method and apparatus for adjusting the thickness of a thin layer of semiconductor material |
JP2004527229A JP4684650B2 (ja) | 2002-08-12 | 2003-08-11 | 薄層を形成する方法、犠牲酸化によって厚みを補正するステップを含む方法、及び関連する機械 |
EP03784416A EP1547143B1 (fr) | 2002-08-12 | 2003-08-11 | Procede de preparation d'une couche mince, ledit procede comprenant une etape de correction de l'epaisseur par oxydation sacrificielle et machine associee |
AU2003263391A AU2003263391A1 (en) | 2002-08-12 | 2003-08-11 | A method of preparing a thin layer, the method including a step of correcting thickness by sacrificial oxidation, and an associated machine |
DE60334555T DE60334555D1 (de) | 2002-08-12 | 2003-08-11 | Verfahren zur herstellung einer dünnen schicht, einschliesslich eines schrittes des korrigierens der dicke durch hilfsoxidation und zugehörige vorrichtung |
AT03784416T ATE484847T1 (de) | 2002-08-12 | 2003-08-11 | Verfahren zur herstellung einer dünnen schicht, einschliesslich eines schrittes des korrigierens der dicke durch hilfsoxidation und zugehörige vorrichtung |
PCT/IB2003/003640 WO2004015759A2 (fr) | 2002-08-12 | 2003-08-11 | Procede de preparation d'une couche mince, ledit procede comprenant une etape de correction de l'epaisseur par oxydation sacrificielle et machine associee |
EP10155844A EP2190010A2 (fr) | 2002-08-12 | 2003-08-11 | Procédé de préparation d'une fine couche de matériau semi-conducteur |
TW092122092A TWI298919B (en) | 2002-08-12 | 2003-08-12 | A method of preparing a thin layer, the method including a step of correcting thickness by sacrificial oxidation, and an associated machine |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0210209A FR2843487B1 (fr) | 2002-08-12 | 2002-08-12 | Procede d'elaboration de couche mince comprenant une etape de correction d'epaisseur par oxydation sacrificielle, et machine associee |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2843487A1 FR2843487A1 (fr) | 2004-02-13 |
FR2843487B1 true FR2843487B1 (fr) | 2005-10-14 |
Family
ID=30471070
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0210209A Expired - Lifetime FR2843487B1 (fr) | 2002-08-12 | 2002-08-12 | Procede d'elaboration de couche mince comprenant une etape de correction d'epaisseur par oxydation sacrificielle, et machine associee |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2843487B1 (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3034565B1 (fr) | 2015-03-30 | 2017-03-31 | Soitec Silicon On Insulator | Procede de fabrication d'une structure presentant une couche dielectrique enterree d'epaisseur uniforme |
CN113678237A (zh) * | 2019-02-15 | 2021-11-19 | 朗姆研究公司 | 针对多重图案化工艺使用多区加热衬底支撑件的修整与沉积轮廓控制 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW346649B (en) * | 1996-09-24 | 1998-12-01 | Tokyo Electron Co Ltd | Method for wet etching a film |
US6111634A (en) * | 1997-05-28 | 2000-08-29 | Lam Research Corporation | Method and apparatus for in-situ monitoring of thickness using a multi-wavelength spectrometer during chemical-mechanical polishing |
TW455973B (en) * | 1999-04-05 | 2001-09-21 | Applied Materials Inc | Endpoint detection in the fabrication of electronic devices |
FR2797714B1 (fr) * | 1999-08-20 | 2001-10-26 | Soitec Silicon On Insulator | Procede de traitement de substrats pour la microelectronique et substrats obtenus par ce procede |
US6950196B2 (en) * | 2000-09-20 | 2005-09-27 | Kla-Tencor Technologies Corp. | Methods and systems for determining a thickness of a structure on a specimen and at least one additional property of the specimen |
-
2002
- 2002-08-12 FR FR0210209A patent/FR2843487B1/fr not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
FR2843487A1 (fr) | 2004-02-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CD | Change of name or company name |
Owner name: SOITEC, FR Effective date: 20120423 |
|
PLFP | Fee payment |
Year of fee payment: 15 |
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PLFP | Fee payment |
Year of fee payment: 16 |
|
PLFP | Fee payment |
Year of fee payment: 17 |
|
PLFP | Fee payment |
Year of fee payment: 18 |
|
PLFP | Fee payment |
Year of fee payment: 19 |
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PLFP | Fee payment |
Year of fee payment: 20 |