FR2828746B1 - Composition d'elimination de reserve et de sous-produits de gravure et procede d'elimination de reserve utilisant celle-ci - Google Patents

Composition d'elimination de reserve et de sous-produits de gravure et procede d'elimination de reserve utilisant celle-ci

Info

Publication number
FR2828746B1
FR2828746B1 FR0210330A FR0210330A FR2828746B1 FR 2828746 B1 FR2828746 B1 FR 2828746B1 FR 0210330 A FR0210330 A FR 0210330A FR 0210330 A FR0210330 A FR 0210330A FR 2828746 B1 FR2828746 B1 FR 2828746B1
Authority
FR
France
Prior art keywords
reserve
etching
products
composition
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0210330A
Other languages
English (en)
Other versions
FR2828746A1 (fr
Inventor
Dong Jin Park
Kyung Dae Kim
Sang Mun Chon
Jin Ho Hwang
Il Hyun Sohn
Sang Oh Park
Pil Kwon Jun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of FR2828746A1 publication Critical patent/FR2828746A1/fr
Application granted granted Critical
Publication of FR2828746B1 publication Critical patent/FR2828746B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/38—Cationic compounds
    • C11D1/52—Carboxylic amides, alkylolamides or imides or their condensation products with alkylene oxides
    • C11D1/526—Carboxylic amides (R1-CO-NR2R3), where R1, R2 or R3 are polyalkoxylated
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Detergent Compositions (AREA)
  • Drying Of Semiconductors (AREA)
FR0210330A 2001-08-17 2002-08-14 Composition d'elimination de reserve et de sous-produits de gravure et procede d'elimination de reserve utilisant celle-ci Expired - Fee Related FR2828746B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-2001-0049601A KR100434491B1 (ko) 2001-08-17 2001-08-17 레지스트 또는 식각 부산물 제거용 조성물 및 이를 이용한레지스트 제거 방법

Publications (2)

Publication Number Publication Date
FR2828746A1 FR2828746A1 (fr) 2003-02-21
FR2828746B1 true FR2828746B1 (fr) 2005-02-04

Family

ID=19713293

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0210330A Expired - Fee Related FR2828746B1 (fr) 2001-08-17 2002-08-14 Composition d'elimination de reserve et de sous-produits de gravure et procede d'elimination de reserve utilisant celle-ci

Country Status (9)

Country Link
US (2) US6713440B2 (fr)
JP (1) JP3940634B2 (fr)
KR (1) KR100434491B1 (fr)
CN (1) CN1256629C (fr)
DE (1) DE10237042B4 (fr)
FR (1) FR2828746B1 (fr)
GB (1) GB2381532B (fr)
SG (1) SG128421A1 (fr)
TW (1) TWI247976B (fr)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004101849A (ja) * 2002-09-09 2004-04-02 Mitsubishi Gas Chem Co Inc 洗浄剤組成物
US7166419B2 (en) * 2002-09-26 2007-01-23 Air Products And Chemicals, Inc. Compositions substrate for removing etching residue and use thereof
KR20050017142A (ko) * 2003-08-08 2005-02-22 삼성전자주식회사 린스 용액 및 이를 이용한 반도체 소자 세정 방법
US7587072B2 (en) * 2003-08-22 2009-09-08 Authentec, Inc. System for and method of generating rotational inputs
WO2005040931A1 (fr) * 2003-10-29 2005-05-06 Nagase Chemtex Corporation Composition conçue pour separer une photoresine et procede de separation associe
US8514867B2 (en) * 2004-01-06 2013-08-20 Hava Corporation Method of determining broadband content usage within a system
JP4815771B2 (ja) * 2004-09-01 2011-11-16 住友電気工業株式会社 電気部品の製造方法
KR101117987B1 (ko) * 2005-06-07 2012-03-06 엘지디스플레이 주식회사 평판표시소자의 제조장치 및 방법
KR100705416B1 (ko) * 2005-06-15 2007-04-10 삼성전자주식회사 포토레지스트 제거용 조성물, 이의 제조방법, 이를 이용한포토레지스트의 제거 방법 및 반도체 장치의 제조 방법
KR20090027191A (ko) * 2006-06-21 2009-03-16 이데미쓰 고산 가부시키가이샤 레지스트 박리제
JP2008060238A (ja) * 2006-08-30 2008-03-13 Toshiba Corp 半導体装置の製造方法
JP5233028B2 (ja) * 2006-12-19 2013-07-10 ライオン株式会社 液体洗浄剤組成物用洗浄溶剤
JP5018098B2 (ja) * 2007-01-19 2012-09-05 東ソー株式会社 配線工程用レジストの剥離方法
KR100761012B1 (ko) * 2007-03-28 2007-10-01 배지현 거치대
JP4728997B2 (ja) * 2007-04-06 2011-07-20 出光興産株式会社 レジスト剥離剤及びその製造方法
US20100120256A1 (en) * 2007-05-14 2010-05-13 Basf Se Method for removing etching residues from semiconductor components
WO2008138882A1 (fr) * 2007-05-14 2008-11-20 Basf Se Procédé d'enlèvement de résidus de gravure à partir de composants semi-conducteurs
KR20100070557A (ko) * 2008-12-18 2010-06-28 주식회사 동부하이텍 반도체 소자의 제조 방법
CN103586229A (zh) * 2013-11-08 2014-02-19 无锡英普林纳米科技有限公司 一种提高纳米***抗粘性能的方法
CN105676600A (zh) * 2016-04-06 2016-06-15 东莞市广华化工有限公司 防腐蚀碱性显影液
KR102426051B1 (ko) 2016-05-31 2022-07-26 삼성전자주식회사 반도체 장치 및 이의 제조 방법
CN108345189A (zh) * 2017-01-25 2018-07-31 东友精细化工有限公司 抗蚀剂剥离液组合物

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6242400B1 (en) 1990-11-05 2001-06-05 Ekc Technology, Inc. Method of stripping resists from substrates using hydroxylamine and alkanolamine
US5981454A (en) * 1993-06-21 1999-11-09 Ekc Technology, Inc. Post clean treatment composition comprising an organic acid and hydroxylamine
US6187730B1 (en) 1990-11-05 2001-02-13 Ekc Technology, Inc. Hydroxylamine-gallic compound composition and process
JPH0954442A (ja) * 1995-08-11 1997-02-25 Mitsubishi Gas Chem Co Inc フォトレジスト剥離剤組成物及び剥離方法
JP2911792B2 (ja) 1995-09-29 1999-06-23 東京応化工業株式会社 レジスト用剥離液組成物
JP3476367B2 (ja) * 1998-07-27 2003-12-10 東京応化工業株式会社 レジスト用剥離液組成物およびこれを用いたレジスト剥離方法
TW594442B (en) 1998-08-05 2004-06-21 Samsung Electronics Co Ltd Resist removing method and apparatus
KR100335484B1 (ko) 1998-08-05 2002-05-04 윤종용 알콕시 ｎ-하이드록시알킬 알칸아미드로 된 레지스트 제거제, 레지스트 제거용 조성물, 이들의 제조 방법 및 이를 이용한 레지스트 제거 방법
US6274537B1 (en) * 1998-08-05 2001-08-14 Samsung Electronics Co., Ltd. Use of alkoxy N-hydroxyalkyl alkanamide as resist removing agent, composition for removing resist, method for preparing the same and resist removing method using the same
DE19936626B4 (de) * 1998-08-05 2007-12-06 Samsung Electronics Co., Ltd., Suwon Resistentfernungsmittel und Resistentfernungsverfahren
JP2000056480A (ja) * 1998-08-10 2000-02-25 Tokyo Ohka Kogyo Co Ltd レジスト用剥離液組成物およびこれを用いたレジスト剥離方法
JP4320865B2 (ja) * 1999-09-27 2009-08-26 三菱瓦斯化学株式会社 レジスト剥離剤組成物およびそれを用いた半導体素子の製造方法。
KR100360397B1 (ko) * 1999-11-26 2002-11-18 삼성전자 주식회사 레지스트 제거용 조성물 및 이를 이용한 레지스트 제거 방법
KR100363271B1 (ko) 2000-06-12 2002-12-05 주식회사 동진쎄미켐 포토레지스트 리무버 조성물
US7037852B2 (en) * 2002-09-26 2006-05-02 Samsung Electronics Co., Ltd. Composition for stripping photoresist and method of preparing the same

Also Published As

Publication number Publication date
US7223721B2 (en) 2007-05-29
FR2828746A1 (fr) 2003-02-21
US20030078174A1 (en) 2003-04-24
US20040142836A1 (en) 2004-07-22
JP3940634B2 (ja) 2007-07-04
SG128421A1 (en) 2007-01-30
US6713440B2 (en) 2004-03-30
GB2381532A (en) 2003-05-07
CN1407409A (zh) 2003-04-02
TWI247976B (en) 2006-01-21
KR20030015716A (ko) 2003-02-25
CN1256629C (zh) 2006-05-17
DE10237042B4 (de) 2007-02-01
GB2381532B (en) 2004-02-18
JP2003098691A (ja) 2003-04-04
DE10237042A1 (de) 2003-03-13
GB0218357D0 (en) 2002-09-18
KR100434491B1 (ko) 2004-06-05

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Effective date: 20150430