FR2823377B1 - Ligne conductrice haute frequence sur un circuit integre - Google Patents

Ligne conductrice haute frequence sur un circuit integre

Info

Publication number
FR2823377B1
FR2823377B1 FR0104693A FR0104693A FR2823377B1 FR 2823377 B1 FR2823377 B1 FR 2823377B1 FR 0104693 A FR0104693 A FR 0104693A FR 0104693 A FR0104693 A FR 0104693A FR 2823377 B1 FR2823377 B1 FR 2823377B1
Authority
FR
France
Prior art keywords
integrated circuit
high frequency
conductive line
frequency conductive
line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR0104693A
Other languages
English (en)
Other versions
FR2823377A1 (fr
Inventor
Joaquim Torres
Vincent Amal
Alexis Fracy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0104693A priority Critical patent/FR2823377B1/fr
Priority to US10/117,782 priority patent/US6949444B2/en
Publication of FR2823377A1 publication Critical patent/FR2823377A1/fr
Application granted granted Critical
Publication of FR2823377B1 publication Critical patent/FR2823377B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32051Deposition of metallic or metal-silicide layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR0104693A 2001-04-06 2001-04-06 Ligne conductrice haute frequence sur un circuit integre Expired - Lifetime FR2823377B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0104693A FR2823377B1 (fr) 2001-04-06 2001-04-06 Ligne conductrice haute frequence sur un circuit integre
US10/117,782 US6949444B2 (en) 2001-04-06 2002-04-05 High-frequency line

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0104693A FR2823377B1 (fr) 2001-04-06 2001-04-06 Ligne conductrice haute frequence sur un circuit integre

Publications (2)

Publication Number Publication Date
FR2823377A1 FR2823377A1 (fr) 2002-10-11
FR2823377B1 true FR2823377B1 (fr) 2004-07-16

Family

ID=8862026

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0104693A Expired - Lifetime FR2823377B1 (fr) 2001-04-06 2001-04-06 Ligne conductrice haute frequence sur un circuit integre

Country Status (2)

Country Link
US (1) US6949444B2 (fr)
FR (1) FR2823377B1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10143936A1 (de) * 2001-09-07 2003-01-09 Infineon Technologies Ag Verfahren zur Bildung eines SOI-Substrats, vertikaler Transistor und Speicherzelle mit vertikalem Transistor
US7811896B2 (en) * 2007-12-11 2010-10-12 Hvvi Semiconductors, Inc. Semiconductor structure and method of manufacture
US7985977B2 (en) * 2007-12-11 2011-07-26 Hvvi Semiconductors, Inc. Sacrificial pillar dielectric platform
TWI664695B (zh) * 2017-06-01 2019-07-01 世界先進積體電路股份有限公司 半導體裝置之隔離區塊的製造方法、半導體裝置及其製造方法
US10115626B1 (en) 2017-07-17 2018-10-30 Vanguard International Semiconductor Corporation Methods for forming isolation blocks of semiconductor devices, semiconductor devices and methods for manufacturing the same
US11081364B2 (en) * 2019-02-06 2021-08-03 Micron Technology, Inc. Reduction of crystal growth resulting from annealing a conductive material

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4888300A (en) * 1985-11-07 1989-12-19 Fairchild Camera And Instrument Corporation Submerged wall isolation of silicon islands
JPS63122261A (ja) * 1986-11-12 1988-05-26 Mitsubishi Electric Corp 半導体装置の製造方法
US5648340A (en) * 1991-10-31 1997-07-15 Barnea; Eytan R. Gestational agents for controlling cell proliferation
US5098856A (en) * 1991-06-18 1992-03-24 International Business Machines Corporation Air-filled isolation trench with chemically vapor deposited silicon dioxide cap
US5204280A (en) * 1992-04-09 1993-04-20 International Business Machines Corporation Process for fabricating multiple pillars inside a dram trench for increased capacitor surface
JP3161068B2 (ja) * 1992-08-28 2001-04-25 日産自動車株式会社 半導体ミリ波装置
US5516720A (en) * 1994-02-14 1996-05-14 United Microelectronics Corporation Stress relaxation in dielectric before metallization
US5466630A (en) * 1994-03-21 1995-11-14 United Microelectronics Corp. Silicon-on-insulator technique with buried gap
US5595926A (en) * 1994-06-29 1997-01-21 Industrial Technology Research Institute Method for fabricating a DRAM trench capacitor with recessed pillar
JPH10321802A (ja) * 1997-05-22 1998-12-04 Toshiba Corp インダクタ素子
DE19847440A1 (de) * 1997-12-22 1999-06-24 Inst Halbleiterphysik Gmbh Integrierte Schaltung mit verringerten parasitären kapazitiven Einflüssen und Verfahren zu ihrer Herstellung
TW363278B (en) * 1998-01-16 1999-07-01 Winbond Electronics Corp Preparation method for semiconductor to increase the inductive resonance frequency and Q value
JP3214441B2 (ja) * 1998-04-10 2001-10-02 日本電気株式会社 半導体装置及びその製造方法
US6071805A (en) * 1999-01-25 2000-06-06 Chartered Semiconductor Manufacturing, Ltd. Air gap formation for high speed IC processing
JP4005762B2 (ja) * 1999-06-30 2007-11-14 株式会社東芝 集積回路装置及びその製造方法
US6307247B1 (en) 1999-07-12 2001-10-23 Robert Bruce Davies Monolithic low dielectric constant platform for passive components and method
KR100369324B1 (ko) * 1999-12-02 2003-01-24 한국전자통신연구원 평면형 마이크로 공동구조 제조 방법
US6406975B1 (en) * 2000-11-27 2002-06-18 Chartered Semiconductor Manufacturing Inc. Method for fabricating an air gap shallow trench isolation (STI) structure
US6498069B1 (en) * 2001-10-17 2002-12-24 Semiconductor Components Industries Llc Semiconductor device and method of integrating trench structures

Also Published As

Publication number Publication date
US20020164867A1 (en) 2002-11-07
US6949444B2 (en) 2005-09-27
FR2823377A1 (fr) 2002-10-11

Similar Documents

Publication Publication Date Title
DE60234014D1 (de) Hochfrequenzleiterplattenkontaktlocher
DE69929534D1 (de) Hochfrequenzfunkschaltung
DE60027998D1 (de) Beatmungsgerät mit Hochfrequenzoszillator
DE60220053D1 (de) Schaltkreis
FR2809869B1 (fr) Dispositif a semiconducteur comprenant un circuit de haute frequence avec une inductance
DE60218932D1 (de) Integrierte Schaltkreisstruktur
DE60230568D1 (de) Integrierte Radiofrequenz-Schaltkreise
DE60311549D1 (de) Dielektrische Resonatorantenne
DE50205477D1 (de) Temperaturstabilisierter oszillator-schaltkreis
DE60230554D1 (de) PLL-Schaltung mit veränderbarer Ausgangsfrequenz
DE50110260D1 (de) Kühlkreislauf
FR2828350B1 (fr) Dispositif de circuit doubleur de frequence
DE50103674D1 (de) Oszillatorschaltung
DE60218046D1 (de) Anlaufschaltung
DE60104111D1 (de) Oszillatorschaltung
DE60122381D1 (de) Hochfrequenz-halbleiterbauelement
DE60204532D1 (de) Oszillatorschaltung
FI20012074A0 (fi) Tasasuuntauspiiri
FR2823377B1 (fr) Ligne conductrice haute frequence sur un circuit integre
DE60203191D1 (de) Verbindungsschaltkreis
GB2382929B (en) High frequency circuit component
DE60228062D1 (de) Elektronischer stimmzettelkasten
FR2824424B1 (fr) Circuit integre de haute frequence
DE50111038D1 (de) Oszillatorschaltkreis
DE50203067D1 (de) Quarzoszillatorschaltung