FR2792455B1 - Procede et installation de correction d'un circuit integre par un faisceau d'ions controle par le profil des variations du taux de particules secondaires detectees - Google Patents
Procede et installation de correction d'un circuit integre par un faisceau d'ions controle par le profil des variations du taux de particules secondaires detecteesInfo
- Publication number
- FR2792455B1 FR2792455B1 FR9904805A FR9904805A FR2792455B1 FR 2792455 B1 FR2792455 B1 FR 2792455B1 FR 9904805 A FR9904805 A FR 9904805A FR 9904805 A FR9904805 A FR 9904805A FR 2792455 B1 FR2792455 B1 FR 2792455B1
- Authority
- FR
- France
- Prior art keywords
- correcting
- profile
- variations
- installation
- rate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000009434 installation Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000011163 secondary particle Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9904805A FR2792455B1 (fr) | 1999-04-16 | 1999-04-16 | Procede et installation de correction d'un circuit integre par un faisceau d'ions controle par le profil des variations du taux de particules secondaires detectees |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9904805A FR2792455B1 (fr) | 1999-04-16 | 1999-04-16 | Procede et installation de correction d'un circuit integre par un faisceau d'ions controle par le profil des variations du taux de particules secondaires detectees |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2792455A1 FR2792455A1 (fr) | 2000-10-20 |
FR2792455B1 true FR2792455B1 (fr) | 2003-02-28 |
Family
ID=9544499
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9904805A Expired - Fee Related FR2792455B1 (fr) | 1999-04-16 | 1999-04-16 | Procede et installation de correction d'un circuit integre par un faisceau d'ions controle par le profil des variations du taux de particules secondaires detectees |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2792455B1 (fr) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4027062A1 (de) * | 1990-08-27 | 1992-04-23 | Integrated Circuit Testing | Verfahren und anordnung zum testen und reparieren einer integrierten schaltung |
US5140164A (en) * | 1991-01-14 | 1992-08-18 | Schlumberger Technologies, Inc. | Ic modification with focused ion beam system |
JPH07280890A (ja) * | 1994-04-08 | 1995-10-27 | Advantest Corp | Ic試験装置並びにそれに使われるイオンビームテスタ及びこの装置を用いたicの不良部分の特定方法 |
-
1999
- 1999-04-16 FR FR9904805A patent/FR2792455B1/fr not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
FR2792455A1 (fr) | 2000-10-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20141231 |