FR2789226B1 - Dispositif de protection contre les decharges electrostatiques pour composants microelectroniques sur substrat du type soi - Google Patents

Dispositif de protection contre les decharges electrostatiques pour composants microelectroniques sur substrat du type soi

Info

Publication number
FR2789226B1
FR2789226B1 FR9901032A FR9901032A FR2789226B1 FR 2789226 B1 FR2789226 B1 FR 2789226B1 FR 9901032 A FR9901032 A FR 9901032A FR 9901032 A FR9901032 A FR 9901032A FR 2789226 B1 FR2789226 B1 FR 2789226B1
Authority
FR
France
Prior art keywords
soi
protection device
electrostatic discharge
type substrate
discharge protection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9901032A
Other languages
English (en)
Other versions
FR2789226A1 (fr
Inventor
Charles Leroux
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR9901032A priority Critical patent/FR2789226B1/fr
Priority to JP2000596603A priority patent/JP4799735B2/ja
Priority to PCT/FR2000/000198 priority patent/WO2000045439A1/fr
Priority to EP00901665A priority patent/EP1147559A1/fr
Priority to US09/889,558 priority patent/US6969891B1/en
Publication of FR2789226A1 publication Critical patent/FR2789226A1/fr
Application granted granted Critical
Publication of FR2789226B1 publication Critical patent/FR2789226B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66098—Breakdown diodes
    • H01L29/66106—Zener diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/866—Zener diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
FR9901032A 1999-01-29 1999-01-29 Dispositif de protection contre les decharges electrostatiques pour composants microelectroniques sur substrat du type soi Expired - Fee Related FR2789226B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR9901032A FR2789226B1 (fr) 1999-01-29 1999-01-29 Dispositif de protection contre les decharges electrostatiques pour composants microelectroniques sur substrat du type soi
JP2000596603A JP4799735B2 (ja) 1999-01-29 2000-01-28 Ｓｏｉ基板上のマイクロ電子部品用の静電放電保護デバイス
PCT/FR2000/000198 WO2000045439A1 (fr) 1999-01-29 2000-01-28 Dispositif de protection contre les decharges electrostatiques pour composants microelectroniques sur substrat du type soi
EP00901665A EP1147559A1 (fr) 1999-01-29 2000-01-28 Dispositif de protection contre les decharges electrostatiques pour composants microelectroniques sur substrat du type soi
US09/889,558 US6969891B1 (en) 1999-01-29 2000-01-28 Device providing protection against electrostatic discharges for microelectronic components on a SOI-type substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9901032A FR2789226B1 (fr) 1999-01-29 1999-01-29 Dispositif de protection contre les decharges electrostatiques pour composants microelectroniques sur substrat du type soi

Publications (2)

Publication Number Publication Date
FR2789226A1 FR2789226A1 (fr) 2000-08-04
FR2789226B1 true FR2789226B1 (fr) 2002-06-14

Family

ID=9541385

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9901032A Expired - Fee Related FR2789226B1 (fr) 1999-01-29 1999-01-29 Dispositif de protection contre les decharges electrostatiques pour composants microelectroniques sur substrat du type soi

Country Status (5)

Country Link
US (1) US6969891B1 (fr)
EP (1) EP1147559A1 (fr)
JP (1) JP4799735B2 (fr)
FR (1) FR2789226B1 (fr)
WO (1) WO2000045439A1 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0738035A (ja) * 1993-07-22 1995-02-07 Toppan Printing Co Ltd 樹脂封止電子回路装置の製造方法
JP3962729B2 (ja) 2004-06-03 2007-08-22 株式会社東芝 半導体装置
JP4282581B2 (ja) * 2004-09-29 2009-06-24 株式会社東芝 静電保護回路
DE102006023429B4 (de) * 2006-05-18 2011-03-10 Infineon Technologies Ag ESD-Schutz-Element zur Verwendung in einem elektrischen Schaltkreis
JP2008053693A (ja) * 2006-07-28 2008-03-06 Sanyo Electric Co Ltd 半導体モジュール、携帯機器、および半導体モジュールの製造方法
US8048753B2 (en) 2009-06-12 2011-11-01 Globalfoundries Inc. Charging protection device
US9142463B2 (en) 2010-01-29 2015-09-22 Fuji Electric Co., Ltd. Semiconductor device
US20120127617A1 (en) * 2010-11-24 2012-05-24 Achim Werner Electrostatic Discharge Circuit
US9093564B2 (en) 2013-03-20 2015-07-28 International Business Machines Corporation Integrated passive devices for FinFET technologies
JP2015103605A (ja) * 2013-11-22 2015-06-04 株式会社メガチップス Ｅｓｄ保護回路
US10552564B1 (en) * 2018-06-19 2020-02-04 Cadence Design Systems, Inc. Determining worst potential failure instances using full chip ESD analysis

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3728591A (en) * 1971-09-03 1973-04-17 Rca Corp Gate protective device for insulated gate field-effect transistors
JPS57153463A (en) * 1981-02-27 1982-09-22 Westinghouse Electric Corp Overvoltage protecting device
JP2649359B2 (ja) * 1986-10-08 1997-09-03 日本電装株式会社 半導体装置の製造方法
JPH02185069A (ja) * 1988-12-02 1990-07-19 Motorola Inc 高エネルギー阻止能力及び温度補償された阻止電圧を具備する半導体デバイス
US6330977B1 (en) * 1989-05-15 2001-12-18 Dallas Semiconductor Corporation Electronic labeling systems and methods and electronic card systems and methods
US5210846B1 (en) * 1989-05-15 1999-06-29 Dallas Semiconductor One-wire bus architecture
US4982371A (en) * 1989-05-15 1991-01-01 Dallas Semiconductor Corporation Compact electronic module having a RAM device
US5619066A (en) * 1990-05-15 1997-04-08 Dallas Semiconductor Corporation Memory for an electronic token
JP3522788B2 (ja) * 1992-10-29 2004-04-26 株式会社ルネサステクノロジ 半導体集積回路装置
US5343053A (en) * 1993-05-21 1994-08-30 David Sarnoff Research Center Inc. SCR electrostatic discharge protection for integrated circuits
JP2768265B2 (ja) * 1994-04-15 1998-06-25 株式会社デンソー 半導体装置
US5610790A (en) * 1995-01-20 1997-03-11 Xilinx, Inc. Method and structure for providing ESD protection for silicon on insulator integrated circuits
US5536958A (en) * 1995-05-02 1996-07-16 Motorola, Inc. Semiconductor device having high voltage protection capability
JPH0945912A (ja) * 1995-07-31 1997-02-14 Nec Corp 半導体装置およびその製造方法
US5708288A (en) * 1995-11-02 1998-01-13 Motorola, Inc. Thin film silicon on insulator semiconductor integrated circuit with electrostatic damage protection and method
US5719737A (en) 1996-03-21 1998-02-17 Intel Corporation Voltage-tolerant electrostatic discharge protection device for integrated circuit power supplies
JP3717227B2 (ja) * 1996-03-29 2005-11-16 株式会社ルネサステクノロジ 入力／出力保護回路
US6157530A (en) * 1999-01-04 2000-12-05 International Business Machines Corporation Method and apparatus for providing ESD protection
TW446192U (en) * 2000-05-04 2001-07-11 United Microelectronics Corp Electrostatic discharge protection circuit

Also Published As

Publication number Publication date
JP4799735B2 (ja) 2011-10-26
US6969891B1 (en) 2005-11-29
JP2002538598A (ja) 2002-11-12
WO2000045439A1 (fr) 2000-08-03
EP1147559A1 (fr) 2001-10-24
FR2789226A1 (fr) 2000-08-04

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Year of fee payment: 18

ST Notification of lapse

Effective date: 20170929