FR2781082B1 - Structure semiconductrice en couche mince comportant une couche de repartition de chaleur - Google Patents

Structure semiconductrice en couche mince comportant une couche de repartition de chaleur

Info

Publication number
FR2781082B1
FR2781082B1 FR9808919A FR9808919A FR2781082B1 FR 2781082 B1 FR2781082 B1 FR 2781082B1 FR 9808919 A FR9808919 A FR 9808919A FR 9808919 A FR9808919 A FR 9808919A FR 2781082 B1 FR2781082 B1 FR 2781082B1
Authority
FR
France
Prior art keywords
layer
heat
semiconductor thin
distributing
layer structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9808919A
Other languages
English (en)
Other versions
FR2781082A1 (fr
Inventor
Jean Pierre Joly
Michel Bruel
Claude Jaussaud
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR9808919A priority Critical patent/FR2781082B1/fr
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to EP99929439A priority patent/EP1103072A1/fr
Priority to KR1020017000370A priority patent/KR100662694B1/ko
Priority to PCT/FR1999/001659 priority patent/WO2000003429A1/fr
Priority to JP2000559589A priority patent/JP2002525839A/ja
Publication of FR2781082A1 publication Critical patent/FR2781082A1/fr
Priority to US10/093,889 priority patent/US20020089016A1/en
Application granted granted Critical
Publication of FR2781082B1 publication Critical patent/FR2781082B1/fr
Priority to US10/928,057 priority patent/US7300853B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
FR9808919A 1998-07-10 1998-07-10 Structure semiconductrice en couche mince comportant une couche de repartition de chaleur Expired - Fee Related FR2781082B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR9808919A FR2781082B1 (fr) 1998-07-10 1998-07-10 Structure semiconductrice en couche mince comportant une couche de repartition de chaleur
KR1020017000370A KR100662694B1 (ko) 1998-07-10 1999-07-08 열 분산층을 포함하는 박막 반도체 구조
PCT/FR1999/001659 WO2000003429A1 (fr) 1998-07-10 1999-07-08 Structure semiconductrice en couche mince comportant une couche de repartition de chaleur
JP2000559589A JP2002525839A (ja) 1998-07-10 1999-07-08 熱伝導層を有する薄膜層型半導体構造体
EP99929439A EP1103072A1 (fr) 1998-07-10 1999-07-08 Structure semiconductrice en couche mince comportant une couche de repartition de chaleur
US10/093,889 US20020089016A1 (en) 1998-07-10 2002-03-11 Thin layer semi-conductor structure comprising a heat distribution layer
US10/928,057 US7300853B2 (en) 1998-07-10 2004-09-02 Thin layer semi-conductor structure comprising a heat distribution layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9808919A FR2781082B1 (fr) 1998-07-10 1998-07-10 Structure semiconductrice en couche mince comportant une couche de repartition de chaleur

Publications (2)

Publication Number Publication Date
FR2781082A1 FR2781082A1 (fr) 2000-01-14
FR2781082B1 true FR2781082B1 (fr) 2002-09-20

Family

ID=9528546

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9808919A Expired - Fee Related FR2781082B1 (fr) 1998-07-10 1998-07-10 Structure semiconductrice en couche mince comportant une couche de repartition de chaleur

Country Status (5)

Country Link
EP (1) EP1103072A1 (fr)
JP (1) JP2002525839A (fr)
KR (1) KR100662694B1 (fr)
FR (1) FR2781082B1 (fr)
WO (1) WO2000003429A1 (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2809867B1 (fr) * 2000-05-30 2003-10-24 Commissariat Energie Atomique Substrat fragilise et procede de fabrication d'un tel substrat
FR2816445B1 (fr) 2000-11-06 2003-07-25 Commissariat Energie Atomique Procede de fabrication d'une structure empilee comprenant une couche mince adherant a un substrat cible
US6956268B2 (en) 2001-05-18 2005-10-18 Reveo, Inc. MEMS and method of manufacturing MEMS
US7045878B2 (en) 2001-05-18 2006-05-16 Reveo, Inc. Selectively bonded thin film layer and substrate layer for processing of useful devices
FR2826378B1 (fr) * 2001-06-22 2004-10-15 Commissariat Energie Atomique Structure composite a orientation cristalline uniforme et procede de controle de l'orientation cristalline d'une telle structure
US7163826B2 (en) 2001-09-12 2007-01-16 Reveo, Inc Method of fabricating multi layer devices on buried oxide layer substrates
US6875671B2 (en) 2001-09-12 2005-04-05 Reveo, Inc. Method of fabricating vertical integrated circuits
JP5032743B2 (ja) * 2002-09-18 2012-09-26 ソワテク バッファ層を有しないウエハからの緩和された有用層の形成
FR2851079B1 (fr) * 2003-02-12 2005-08-26 Soitec Silicon On Insulator Structure semi-conductrice sur substrat a forte rugosite
US6982210B2 (en) 2003-07-10 2006-01-03 S.O.I.Tec Silicon On Insulator Technologies S.A. Method for manufacturing a multilayer semiconductor structure that includes an irregular layer
JP4641817B2 (ja) * 2005-02-09 2011-03-02 株式会社神戸製鋼所 半導体装置用積層基板の製造方法及び半導体装置
KR101233105B1 (ko) 2008-08-27 2013-02-15 소이텍 선택되거나 제어된 격자 파라미터들을 갖는 반도체 물질층들을 이용하여 반도체 구조물들 또는 소자들을 제조하는 방법
EP2502266B1 (fr) 2009-11-18 2020-03-04 Soitec Procédés de fabrication de structures semi-conductrices et dispositifs à semi-conducteurs au moyen de couches de liaison de verre, et structures semi-conductrices et dispositifs à semi-conducteurs formés par de tels procédés
JP4956649B2 (ja) * 2010-07-06 2012-06-20 三井造船株式会社 炭化珪素基板、半導体装置およびｓｏｉウエハ
FR2967812B1 (fr) * 2010-11-19 2016-06-10 S O I Tec Silicon On Insulator Tech Dispositif electronique pour applications radiofrequence ou de puissance et procede de fabrication d'un tel dispositif

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH067594B2 (ja) * 1987-11-20 1994-01-26 富士通株式会社 半導体基板の製造方法
SE465492B (sv) * 1990-01-24 1991-09-16 Asea Brown Boveri Halvledarkomponent innehaallande ett diamantskikt som aer anordnat mellan ett substrat och ett aktivt skikt och foerfarande foer dess framstaellning
JPH05217824A (ja) * 1992-01-31 1993-08-27 Canon Inc 半導体ウエハ及びその製造方法
US5276338A (en) * 1992-05-15 1994-01-04 International Business Machines Corporation Bonded wafer structure having a buried insulation layer
DE69225911T2 (de) * 1992-12-18 1999-02-11 Harris Corp Silizium-auf-diamant-schaltungsstruktur und herstellungsverfahren dafür
IT1268123B1 (it) * 1994-10-13 1997-02-20 Sgs Thomson Microelectronics Fetta di materiale semiconduttore per la fabbricazione di dispositivi integrati e procedimento per la sua fabbricazione.
US5543637A (en) * 1994-11-14 1996-08-06 North Carolina State University Silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein
US5773151A (en) * 1995-06-30 1998-06-30 Harris Corporation Semi-insulating wafer

Also Published As

Publication number Publication date
EP1103072A1 (fr) 2001-05-30
FR2781082A1 (fr) 2000-01-14
JP2002525839A (ja) 2002-08-13
KR100662694B1 (ko) 2006-12-28
WO2000003429A1 (fr) 2000-01-20
KR20010071813A (ko) 2001-07-31

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Legal Events

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Effective date: 20100331