FR2754937B1 - NOVEL MECHANICAL AND CHEMICAL POLISHING OF INSULATING MATERIAL LAYERS BASED ON SILICON OR SILICON DERIVATIVES - Google Patents
NOVEL MECHANICAL AND CHEMICAL POLISHING OF INSULATING MATERIAL LAYERS BASED ON SILICON OR SILICON DERIVATIVESInfo
- Publication number
- FR2754937B1 FR2754937B1 FR9612892A FR9612892A FR2754937B1 FR 2754937 B1 FR2754937 B1 FR 2754937B1 FR 9612892 A FR9612892 A FR 9612892A FR 9612892 A FR9612892 A FR 9612892A FR 2754937 B1 FR2754937 B1 FR 2754937B1
- Authority
- FR
- France
- Prior art keywords
- silicon
- abrasive
- colloidal silica
- insulating material
- material layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005498 polishing Methods 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 2
- 239000011810 insulating material Substances 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 239000000126 substance Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000008119 colloidal silica Substances 0.000 abstract 4
- 150000003377 silicon compounds Chemical class 0.000 abstract 4
- 239000004744 fabric Substances 0.000 abstract 2
- 239000002245 particle Substances 0.000 abstract 2
- 239000000725 suspension Substances 0.000 abstract 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Chemical-mechanical polishing (CMP) of a silicon- or silicon compound-based insulating layer employs an abrasive cloth containing, as abrasive, an aqueous colloidal silica suspension comprising individual colloidal silica particles which are not bonded together by siloxane bonds and which are suspended in water. Also claimed is an abrasive for CMP of a silicon- or silicon compound-based insulating layer, the abrasive being a cloth impregnated with an aqueous colloidal silica suspension which contains individual 3-250 nm size colloidal silica particles, not bonded together by siloxane bonds, and which has pH 1.5-4.
Priority Applications (11)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9612892A FR2754937B1 (en) | 1996-10-23 | 1996-10-23 | NOVEL MECHANICAL AND CHEMICAL POLISHING OF INSULATING MATERIAL LAYERS BASED ON SILICON OR SILICON DERIVATIVES |
US08/941,188 US6043159A (en) | 1996-10-23 | 1997-09-30 | Chemical mechanical polishing process for layers of isolating materials based on silicon derivatives or silicon |
EP97402355A EP0838845B1 (en) | 1996-10-23 | 1997-10-07 | New process for chemical mechanical polishing of isolating layers based on silicon or silicon containing materials |
DE69709828T DE69709828T2 (en) | 1996-10-23 | 1997-10-07 | New process for the chemical mechanical polishing of insulation layers made of silicon or materials containing silicon |
ES97402355T ES2168591T3 (en) | 1996-10-23 | 1997-10-07 | NEW PROCEDURE FOR THE MECHANICAL-CHEMICAL POLISHING OF LAYERS OF INSULATING MATERIALS BASED ON SILICON OR SILICON DERIVATIVES. |
AT97402355T ATE211585T1 (en) | 1996-10-23 | 1997-10-07 | NEW METHOD FOR CHEMICAL MECHANICAL POLISHING OF INSULATION LAYERS MADE OF SILICON OR MATERIALS CONTAINING SILICON |
MYPI97004688A MY121626A (en) | 1996-10-23 | 1997-10-07 | Chemical mechanical polishing process for layers of isolating materials based on silicon derivatives or silicon |
TW086115391A TW400568B (en) | 1996-10-23 | 1997-10-18 | Chemical mechanical polishing for a layer of isolating material based on silicon or a silicon derivative, and abrasive for the chemical mechanical polishing of a layer of isolating material based on silicon or a silicon derivative |
JP30646797A JP3612192B2 (en) | 1996-10-23 | 1997-10-20 | Novel chemical mechanical polishing method for layers of silicon derivatives or silicon-based separation materials |
KR1019970054183A KR100499184B1 (en) | 1996-10-23 | 1997-10-22 | New Chemical and Mechanical Polishing Method of Silicon Insulators or Silicon-Based Insulation Layers |
CN97121160A CN1083618C (en) | 1996-10-23 | 1997-10-22 | New Chemical mechanical polishing process for layers of isolating material based on silicon derivatives or silicon |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9612892A FR2754937B1 (en) | 1996-10-23 | 1996-10-23 | NOVEL MECHANICAL AND CHEMICAL POLISHING OF INSULATING MATERIAL LAYERS BASED ON SILICON OR SILICON DERIVATIVES |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2754937A1 FR2754937A1 (en) | 1998-04-24 |
FR2754937B1 true FR2754937B1 (en) | 1999-01-15 |
Family
ID=9496922
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9612892A Expired - Lifetime FR2754937B1 (en) | 1996-10-23 | 1996-10-23 | NOVEL MECHANICAL AND CHEMICAL POLISHING OF INSULATING MATERIAL LAYERS BASED ON SILICON OR SILICON DERIVATIVES |
Country Status (11)
Country | Link |
---|---|
US (1) | US6043159A (en) |
EP (1) | EP0838845B1 (en) |
JP (1) | JP3612192B2 (en) |
KR (1) | KR100499184B1 (en) |
CN (1) | CN1083618C (en) |
AT (1) | ATE211585T1 (en) |
DE (1) | DE69709828T2 (en) |
ES (1) | ES2168591T3 (en) |
FR (1) | FR2754937B1 (en) |
MY (1) | MY121626A (en) |
TW (1) | TW400568B (en) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2781922B1 (en) * | 1998-07-31 | 2001-11-23 | Clariant France Sa | METHOD FOR THE MECHANICAL CHEMICAL POLISHING OF A LAYER OF A COPPER-BASED MATERIAL |
FR2785614B1 (en) * | 1998-11-09 | 2001-01-26 | Clariant France Sa | NOVEL SELECTIVE MECHANICAL CHEMICAL POLISHING BETWEEN A SILICON OXIDE LAYER AND A SILICON NITRIDE LAYER |
FR2789998B1 (en) * | 1999-02-18 | 2005-10-07 | Clariant France Sa | NOVEL MECHANICAL CHEMICAL POLISHING COMPOSITION OF A LAYER OF ALUMINUM OR ALUMINUM ALLOY CONDUCTIVE MATERIAL |
FR2792643B1 (en) * | 1999-04-22 | 2001-07-27 | Clariant France Sa | MECHANICAL AND CHEMICAL POLISHING COMPOSITION OF INSULATING MATERIAL BASED ON LOW DIELECTRIC POLYMER |
US6159077A (en) * | 1999-07-30 | 2000-12-12 | Corning Incorporated | Colloidal silica polishing abrasive |
US6306768B1 (en) | 1999-11-17 | 2001-10-23 | Micron Technology, Inc. | Method for planarizing microelectronic substrates having apertures |
US7229927B1 (en) * | 1999-11-23 | 2007-06-12 | Corning Incorporated | Semiconductor processing silica soot abrasive slurry method for integrated circuit microelectronics |
CN1240797C (en) * | 2000-03-31 | 2006-02-08 | 拜尔公司 | Polishing agent and method for producing planar layers |
US7524346B2 (en) * | 2002-01-25 | 2009-04-28 | Dupont Air Products Nanomaterials Llc | Compositions of chemical mechanical planarization slurries contacting noble-metal-featured substrates |
FR2835844B1 (en) * | 2002-02-13 | 2006-12-15 | Clariant | PROCESS FOR THE MECANO-CHEMICAL POLISHING OF METAL SUBSTRATES |
WO2005019364A1 (en) * | 2003-08-14 | 2005-03-03 | Ekc Technology, Inc. | Periodic acid compositions for polishing ruthenium/high k substrates |
JP2005268667A (en) * | 2004-03-19 | 2005-09-29 | Fujimi Inc | Polishing composition |
US9012327B2 (en) * | 2013-09-18 | 2015-04-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Low defect chemical mechanical polishing composition |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3620978A (en) * | 1968-07-18 | 1971-11-16 | Du Pont | Process for preparing stable positively charged alumina-coated silica sols |
US4689656A (en) * | 1984-06-25 | 1987-08-25 | International Business Machines Corporation | Method for forming a void free isolation pattern and resulting structure |
US4944836A (en) * | 1985-10-28 | 1990-07-31 | International Business Machines Corporation | Chem-mech polishing method for producing coplanar metal/insulator films on a substrate |
US5084071A (en) * | 1989-03-07 | 1992-01-28 | International Business Machines Corporation | Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor |
US5264010A (en) * | 1992-04-27 | 1993-11-23 | Rodel, Inc. | Compositions and methods for polishing and planarizing surfaces |
US5575837A (en) * | 1993-04-28 | 1996-11-19 | Fujimi Incorporated | Polishing composition |
US5391258A (en) * | 1993-05-26 | 1995-02-21 | Rodel, Inc. | Compositions and methods for polishing |
US5382272A (en) * | 1993-09-03 | 1995-01-17 | Rodel, Inc. | Activated polishing compositions |
US5340370A (en) * | 1993-11-03 | 1994-08-23 | Intel Corporation | Slurries for chemical mechanical polishing |
US5525191A (en) * | 1994-07-25 | 1996-06-11 | Motorola, Inc. | Process for polishing a semiconductor substrate |
US5527423A (en) * | 1994-10-06 | 1996-06-18 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers |
US5769689A (en) * | 1996-02-28 | 1998-06-23 | Rodel, Inc. | Compositions and methods for polishing silica, silicates, and silicon nitride |
-
1996
- 1996-10-23 FR FR9612892A patent/FR2754937B1/en not_active Expired - Lifetime
-
1997
- 1997-09-30 US US08/941,188 patent/US6043159A/en not_active Expired - Lifetime
- 1997-10-07 MY MYPI97004688A patent/MY121626A/en unknown
- 1997-10-07 DE DE69709828T patent/DE69709828T2/en not_active Expired - Lifetime
- 1997-10-07 ES ES97402355T patent/ES2168591T3/en not_active Expired - Lifetime
- 1997-10-07 AT AT97402355T patent/ATE211585T1/en active
- 1997-10-07 EP EP97402355A patent/EP0838845B1/en not_active Expired - Lifetime
- 1997-10-18 TW TW086115391A patent/TW400568B/en not_active IP Right Cessation
- 1997-10-20 JP JP30646797A patent/JP3612192B2/en not_active Expired - Lifetime
- 1997-10-22 CN CN97121160A patent/CN1083618C/en not_active Expired - Lifetime
- 1997-10-22 KR KR1019970054183A patent/KR100499184B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN1083618C (en) | 2002-04-24 |
EP0838845B1 (en) | 2002-01-02 |
DE69709828D1 (en) | 2002-02-28 |
JP3612192B2 (en) | 2005-01-19 |
MY121626A (en) | 2006-02-28 |
JPH1131675A (en) | 1999-02-02 |
KR19980033056A (en) | 1998-07-25 |
EP0838845A1 (en) | 1998-04-29 |
DE69709828T2 (en) | 2002-09-05 |
FR2754937A1 (en) | 1998-04-24 |
TW400568B (en) | 2000-08-01 |
ES2168591T3 (en) | 2002-06-16 |
CN1187406A (en) | 1998-07-15 |
KR100499184B1 (en) | 2005-09-26 |
ATE211585T1 (en) | 2002-01-15 |
US6043159A (en) | 2000-03-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CD | Change of name or company name | ||
TP | Transmission of property | ||
TP | Transmission of property | ||
TP | Transmission of property | ||
TP | Transmission of property |
Owner name: MERCK PATENT GMBH, DE Effective date: 20150204 |
|
PLFP | Fee payment |
Year of fee payment: 20 |