FR2747233B1 - Procede de fabrication d'un dispositif d'affichage a cristal liquide - Google Patents
Procede de fabrication d'un dispositif d'affichage a cristal liquideInfo
- Publication number
- FR2747233B1 FR2747233B1 FR9704209A FR9704209A FR2747233B1 FR 2747233 B1 FR2747233 B1 FR 2747233B1 FR 9704209 A FR9704209 A FR 9704209A FR 9704209 A FR9704209 A FR 9704209A FR 2747233 B1 FR2747233 B1 FR 2747233B1
- Authority
- FR
- France
- Prior art keywords
- manufacturing
- liquid crystal
- display device
- crystal display
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004973 liquid crystal related substance Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133357—Planarisation layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960010414A KR100202231B1 (ko) | 1996-04-08 | 1996-04-08 | 액정표시장치의 제조방법 및 액정표시장치의 구조 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2747233A1 FR2747233A1 (fr) | 1997-10-10 |
FR2747233B1 true FR2747233B1 (fr) | 2000-09-15 |
Family
ID=19455205
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9704209A Expired - Fee Related FR2747233B1 (fr) | 1996-04-08 | 1997-04-07 | Procede de fabrication d'un dispositif d'affichage a cristal liquide |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP4023866B2 (fr) |
KR (1) | KR100202231B1 (fr) |
DE (1) | DE19714510C2 (fr) |
FR (1) | FR2747233B1 (fr) |
GB (1) | GB2312073B (fr) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100223153B1 (ko) * | 1996-05-23 | 1999-10-15 | 구자홍 | 액티브 매트릭스 액정표시장치의 제조방법 및 액티브매트릭스액정표시장치 |
KR100251091B1 (ko) * | 1996-11-29 | 2000-04-15 | 구본준 | 액정표시장치의 제조방법 및 그 제조방법으로 제조되는 액정표시장치 |
JP3431128B2 (ja) | 1998-08-05 | 2003-07-28 | シャープ株式会社 | 半導体装置の製造方法 |
JP2000353809A (ja) * | 1999-03-02 | 2000-12-19 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
US7821065B2 (en) | 1999-03-02 | 2010-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising a thin film transistor comprising a semiconductor thin film and method of manufacturing the same |
GB2350204B (en) | 1999-05-21 | 2003-07-09 | Lg Philips Lcd Co Ltd | Liquid crystal display and fabrication method thereof |
KR100317625B1 (ko) * | 1999-05-25 | 2001-12-22 | 구본준, 론 위라하디락사 | 박막트랜지스터의 제조방법 |
KR100326881B1 (ko) * | 1999-10-15 | 2002-03-13 | 구본준, 론 위라하디락사 | 액정표시소자 및 그 제조방법 |
KR100752204B1 (ko) * | 1999-12-28 | 2007-08-24 | 엘지.필립스 엘시디 주식회사 | 액정표시장치와 그 제조방법 |
DE10046411A1 (de) * | 2000-09-18 | 2002-03-28 | Philips Corp Intellectual Pty | Projektionseinrichtung mit Flüssigkristall-Lichtmodulator |
US7256421B2 (en) | 2002-05-17 | 2007-08-14 | Semiconductor Energy Laboratory, Co., Ltd. | Display device having a structure for preventing the deterioration of a light emitting device |
TWI238444B (en) | 2002-12-10 | 2005-08-21 | Seiko Epson Corp | Method for manufacturing optoelectronic device, optoelectronic device and electronic machine |
KR100915864B1 (ko) * | 2002-12-26 | 2009-09-07 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이 기판의 제조방법 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4636038A (en) * | 1983-07-09 | 1987-01-13 | Canon Kabushiki Kaisha | Electric circuit member and liquid crystal display device using said member |
US4646424A (en) * | 1985-08-02 | 1987-03-03 | General Electric Company | Deposition and hardening of titanium gate electrode material for use in inverted thin film field effect transistors |
US5032883A (en) * | 1987-09-09 | 1991-07-16 | Casio Computer Co., Ltd. | Thin film transistor and method of manufacturing the same |
JPH04257826A (ja) * | 1991-02-13 | 1992-09-14 | Sharp Corp | アクティブマトリクス基板の製造方法 |
JPH05210116A (ja) * | 1992-01-31 | 1993-08-20 | Canon Inc | 液晶表示装置 |
DE69327028T2 (de) * | 1992-09-25 | 2000-05-31 | Sony Corp., Tokio/Tokyo | Flüssigkristall-Anzeigevorrichtung |
EP0603866B1 (fr) * | 1992-12-25 | 2002-07-24 | Sony Corporation | Substrat à matrice active |
US5441765A (en) * | 1993-09-22 | 1995-08-15 | Dow Corning Corporation | Method of forming Si-O containing coatings |
JPH07302912A (ja) * | 1994-04-29 | 1995-11-14 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
-
1996
- 1996-04-08 KR KR1019960010414A patent/KR100202231B1/ko not_active IP Right Cessation
-
1997
- 1997-04-02 JP JP09979597A patent/JP4023866B2/ja not_active Expired - Lifetime
- 1997-04-07 GB GB9707017A patent/GB2312073B/en not_active Expired - Lifetime
- 1997-04-07 FR FR9704209A patent/FR2747233B1/fr not_active Expired - Fee Related
- 1997-04-08 DE DE19714510A patent/DE19714510C2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
GB9707017D0 (en) | 1997-05-28 |
KR100202231B1 (ko) | 1999-06-15 |
JP4023866B2 (ja) | 2007-12-19 |
DE19714510C2 (de) | 2000-05-25 |
DE19714510A1 (de) | 1997-11-06 |
JPH1068970A (ja) | 1998-03-10 |
GB2312073A (en) | 1997-10-15 |
FR2747233A1 (fr) | 1997-10-10 |
KR970071092A (ko) | 1997-11-07 |
GB2312073B (en) | 1998-06-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TP | Transmission of property | ||
ST | Notification of lapse | ||
RN | Application for restoration | ||
FC | Favourable decision of inpi director general on an application for restauration. | ||
CD | Change of name or company name | ||
PLFP | Fee payment |
Year of fee payment: 20 |