FR2741474B1 - Chambre de traitement sous vide, procede de pulverisation sous vide et dispositif formant magnetron pour la chambre - Google Patents

Chambre de traitement sous vide, procede de pulverisation sous vide et dispositif formant magnetron pour la chambre

Info

Publication number
FR2741474B1
FR2741474B1 FR9613539A FR9613539A FR2741474B1 FR 2741474 B1 FR2741474 B1 FR 2741474B1 FR 9613539 A FR9613539 A FR 9613539A FR 9613539 A FR9613539 A FR 9613539A FR 2741474 B1 FR2741474 B1 FR 2741474B1
Authority
FR
France
Prior art keywords
chamber
vacuum
forming device
spraying method
processing chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9613539A
Other languages
English (en)
Other versions
FR2741474A1 (fr
Inventor
Helmut Daxinger
Walter Haag
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OC Oerlikon Balzers AG
Original Assignee
Balzers AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Balzers AG filed Critical Balzers AG
Publication of FR2741474A1 publication Critical patent/FR2741474A1/fr
Application granted granted Critical
Publication of FR2741474B1 publication Critical patent/FR2741474B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3438—Electrodes other than cathode
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
FR9613539A 1995-11-16 1996-11-06 Chambre de traitement sous vide, procede de pulverisation sous vide et dispositif formant magnetron pour la chambre Expired - Fee Related FR2741474B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH03251/95A CH691686A5 (de) 1995-11-16 1995-11-16 Vakuumbehandlungskammer.

Publications (2)

Publication Number Publication Date
FR2741474A1 FR2741474A1 (fr) 1997-05-23
FR2741474B1 true FR2741474B1 (fr) 2003-02-14

Family

ID=4251930

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9613539A Expired - Fee Related FR2741474B1 (fr) 1995-11-16 1996-11-06 Chambre de traitement sous vide, procede de pulverisation sous vide et dispositif formant magnetron pour la chambre

Country Status (5)

Country Link
US (1) US5733419A (fr)
JP (1) JPH09170077A (fr)
CH (1) CH691686A5 (fr)
DE (1) DE19646700B4 (fr)
FR (1) FR2741474B1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19757353C1 (de) * 1997-12-22 1999-07-29 Fraunhofer Ges Forschung Einrichtung zum Betreiben einer Niederdruckentladung
DE19834592A1 (de) * 1998-07-31 2000-02-03 Leybold Systems Gmbh Vorrichtung zum Beschichten von plattenförmigen Substraten
DE19947932C1 (de) * 1999-09-28 2001-04-26 Fraunhofer Ges Forschung Einrichtung zum Magnetronzerstäuben
US20040216843A1 (en) * 2003-05-01 2004-11-04 Kuang-Chung Peng Plasm etching device
US20080017501A1 (en) * 2006-07-21 2008-01-24 Makoto Inagawa Cooled dark space shield for multi-cathode design
KR101046520B1 (ko) 2007-09-07 2011-07-04 어플라이드 머티어리얼스, 인코포레이티드 내부 챔버 상의 부산물 막 증착을 제어하기 위한 ｐｅｃｖｄ 시스템에서의 소스 가스 흐름 경로 제어
BE1018645A5 (fr) * 2007-09-24 2011-06-07 Ardenne Anlagentech Gmbh Systeme de magnetron avec support de cible blinde.
DE102009051056B4 (de) * 2009-10-28 2012-04-05 Von Ardenne Anlagentechnik Gmbh Verfahren zum Wiederherstellen des Betriebszustandes der Entladung beim Magnetronsputtern und Schaltung zur Durchführung des Verfahrens

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE222900C (fr) *
US3514391A (en) * 1967-05-05 1970-05-26 Nat Res Corp Sputtering apparatus with finned anode
JPS527669A (en) * 1975-07-08 1977-01-20 Jeol Ltd Sputtering apparatus
DE3427587A1 (de) * 1984-07-26 1986-02-06 Leybold-Heraeus GmbH, 5000 Köln Zerstaeubungseinrichtung fuer katodenzerstaeubungsanlagen
DE4026367A1 (de) * 1990-06-25 1992-03-12 Leybold Ag Vorrichtung zum beschichten von substraten
US5106474A (en) * 1990-11-21 1992-04-21 Viratec Thin Films, Inc. Anode structures for magnetron sputtering apparatus
JPH05230646A (ja) * 1992-02-19 1993-09-07 Toshiba Corp スパッタ装置
CH689767A5 (de) * 1992-03-24 1999-10-15 Balzers Hochvakuum Verfahren zur Werkstueckbehandlung in einer Vakuumatmosphaere und Vakuumbehandlungsanlage.
US6296743B1 (en) * 1993-04-02 2001-10-02 Applied Materials, Inc. Apparatus for DC reactive plasma vapor deposition of an electrically insulating material using a shielded secondary anode
US5403458A (en) * 1993-08-05 1995-04-04 Guardian Industries Corp. Sputter-coating target and method of use

Also Published As

Publication number Publication date
FR2741474A1 (fr) 1997-05-23
CH691686A5 (de) 2001-09-14
DE19646700B4 (de) 2010-03-25
US5733419A (en) 1998-03-31
JPH09170077A (ja) 1997-06-30
DE19646700A1 (de) 1997-05-22

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20100730