FR2727586B1 - Circuit de commande pour un interrupteur a semi-conducteur - Google Patents

Circuit de commande pour un interrupteur a semi-conducteur

Info

Publication number
FR2727586B1
FR2727586B1 FR9510883A FR9510883A FR2727586B1 FR 2727586 B1 FR2727586 B1 FR 2727586B1 FR 9510883 A FR9510883 A FR 9510883A FR 9510883 A FR9510883 A FR 9510883A FR 2727586 B1 FR2727586 B1 FR 2727586B1
Authority
FR
France
Prior art keywords
control circuit
semiconductor switch
semiconductor
switch
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9510883A
Other languages
English (en)
Other versions
FR2727586A1 (fr
Inventor
Erkki Miettinen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ABB Industry Oy
Original Assignee
ABB Industry Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ABB Industry Oy filed Critical ABB Industry Oy
Publication of FR2727586A1 publication Critical patent/FR2727586A1/fr
Application granted granted Critical
Publication of FR2727586B1 publication Critical patent/FR2727586B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/689Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
    • H03K17/691Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F29/00Variable transformers or inductances not covered by group H01F21/00
    • H01F29/14Variable transformers or inductances not covered by group H01F21/00 with variable magnetic bias
    • H01F2029/143Variable transformers or inductances not covered by group H01F21/00 with variable magnetic bias with control winding for generating magnetic bias

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
  • Dc-Dc Converters (AREA)
  • Relay Circuits (AREA)
FR9510883A 1994-09-27 1995-09-11 Circuit de commande pour un interrupteur a semi-conducteur Expired - Fee Related FR2727586B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI944485A FI97176C (fi) 1994-09-27 1994-09-27 Puolijohdekytkimen ohjauspiiri

Publications (2)

Publication Number Publication Date
FR2727586A1 FR2727586A1 (fr) 1996-05-31
FR2727586B1 true FR2727586B1 (fr) 1998-11-20

Family

ID=8541457

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9510883A Expired - Fee Related FR2727586B1 (fr) 1994-09-27 1995-09-11 Circuit de commande pour un interrupteur a semi-conducteur

Country Status (7)

Country Link
US (1) US5530385A (fr)
JP (1) JPH08111635A (fr)
DE (1) DE19535166C2 (fr)
FI (1) FI97176C (fr)
FR (1) FR2727586B1 (fr)
GB (1) GB2293933B (fr)
IT (1) IT1281363B1 (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5910738A (en) * 1995-04-07 1999-06-08 Kabushiki Kaisha Toshiba Driving circuit for driving a semiconductor device at high speed and method of operating the same
US5663672A (en) * 1995-11-17 1997-09-02 Sundstrand Corporation Transistor gate drive circuit providing dielectric isolation and protection
US5686854A (en) * 1996-03-14 1997-11-11 Magl Power Inc. Isolated driver circuit for high frequency solid-state switches
DE19704808A1 (de) * 1997-02-08 1998-08-13 Bosch Gmbh Robert Vorrichtung zur Ansteuerung eines elektromagnetischen Verbrauchers
JP3067687B2 (ja) * 1997-05-08 2000-07-17 富士電機株式会社 Igbt駆動回路
GB2356753B (en) * 1999-11-29 2004-08-11 Eev Ltd Switching arrangement
JP3855116B2 (ja) * 2000-03-22 2006-12-06 日本光電工業株式会社 半導体スイッチ駆動回路
EP1391900A1 (fr) 2002-08-22 2004-02-25 Abb Research Ltd. Transformateur de signal et procédé de fonctionnement d'un tel transformateur de signal
FI116109B (fi) * 2004-05-10 2005-09-15 Abb Oy Puolijohdekomponentin ohjauskytkentä
JP4957495B2 (ja) * 2007-10-03 2012-06-20 株式会社豊田自動織機 信号伝達回路
WO2009079440A1 (fr) * 2007-12-17 2009-06-25 Lawson Labs, Inc. Commutateur de retenue de charge de grille
US8816653B2 (en) * 2008-09-25 2014-08-26 Infineon Technologies Austria Ag Circuit including a transformer for driving a semiconductor switching element
US7679410B1 (en) 2008-09-29 2010-03-16 The United States Of America As Represented By The Secretary Of The Navy System and method for improving the efficiency and reliability of a broadband transistor switch for periodic switching applications
US8400789B2 (en) * 2010-04-27 2013-03-19 Power Integrations, Inc. Power supply with input filter-controlled switch clamp circuit
FI10493U1 (fi) 2013-02-20 2014-05-22 Vacon Oyj Järjestely tehoelektroniikkalaitteissa käytettävien jänniteohjattujen tehopuolijohdekytkinten hilaohjausjännitteen muodostamiseksi
DE112013006773T5 (de) 2013-03-06 2015-12-10 SiEVA Vorrichtung für high-side Transistor-Brückentreiber

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3616097A1 (de) * 1986-05-13 1987-11-19 Bbc Brown Boveri & Cie Schaltungsanordnung zur ansteuerung von leistungs-feldeffekttransistoren
EP0354435B1 (fr) * 1988-08-12 1995-12-20 Hitachi, Ltd. Circuit d'attaque pour transistor à grille isolée; et son utilisation dans un circuit de commutation, dans un dispositif de commutation de courant, et dans un système à moteur à induction
US5055762A (en) * 1989-04-17 1991-10-08 General Motors Corporation Current controlled full wave transitor bridge inverter for a multiple phase AC machine
FR2669477A1 (fr) * 1990-11-16 1992-05-22 Gen Electric Cgr Circuit de commande de commutation basse frequence de transistors a effet de champ et de transistors bipolaires a grille isolee.
DE4139997A1 (de) * 1990-12-06 1992-07-09 Ozcan Akdogan Schaltungsanordnung mit leistungs-mosfet-transistoren
US5257323A (en) * 1991-05-29 1993-10-26 Canon Kabushiki Kaisha Selection agent for a symbol determination system with multiple character recognition processors
US5168182A (en) * 1991-06-24 1992-12-01 United Technologies Corporation 0-100% duty cycle, transformer isolated fet driver
FI90605C (fi) * 1991-12-09 1994-02-25 Abb Stroemberg Drives Oy Puolijohdekytkimen ohjauspiiri
DE4208894A1 (de) * 1992-03-19 1993-09-23 Abb Patent Gmbh Schaltung zur ansteuerung eines spannungsgesteuerten halbleiterschalters
FR2693604B1 (fr) * 1992-07-10 1994-10-07 Sgs Thomson Microelectronics Convertisseur commandé par impulsions et commande électrique de moteur.

Also Published As

Publication number Publication date
FI97176C (fi) 1996-10-25
GB2293933B (en) 1998-10-28
GB9518030D0 (en) 1995-11-08
GB2293933A (en) 1996-04-10
ITTO950767A0 (it) 1995-09-26
DE19535166A1 (de) 1996-03-28
FR2727586A1 (fr) 1996-05-31
US5530385A (en) 1996-06-25
IT1281363B1 (it) 1998-02-18
FI944485A (fi) 1996-03-28
FI97176B (fi) 1996-07-15
FI944485A0 (fi) 1994-09-27
DE19535166C2 (de) 2002-10-24
ITTO950767A1 (it) 1997-03-26
JPH08111635A (ja) 1996-04-30

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Legal Events

Date Code Title Description
ST Notification of lapse