FR2719416B1 - Process for passivation of the sides of a thin-film semiconductor component. - Google Patents
Process for passivation of the sides of a thin-film semiconductor component.Info
- Publication number
- FR2719416B1 FR2719416B1 FR9405240A FR9405240A FR2719416B1 FR 2719416 B1 FR2719416 B1 FR 2719416B1 FR 9405240 A FR9405240 A FR 9405240A FR 9405240 A FR9405240 A FR 9405240A FR 2719416 B1 FR2719416 B1 FR 2719416B1
- Authority
- FR
- France
- Prior art keywords
- passivation
- thin
- sides
- semiconductor component
- film semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title 1
- 238000002161 passivation Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3185—Partial encapsulation or coating the coating covering also the sidewalls of the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9405240A FR2719416B1 (en) | 1994-04-29 | 1994-04-29 | Process for passivation of the sides of a thin-film semiconductor component. |
JP7528040A JPH09512667A (en) | 1994-04-29 | 1995-05-02 | Method of passivating side surface of thin film semiconductor component |
PCT/FR1995/000572 WO1995030241A1 (en) | 1994-04-29 | 1995-05-02 | Method for passivating the sides of a thin film semiconductor component |
EP95919467A EP0757845A1 (en) | 1994-04-29 | 1995-05-02 | Method for passivating the sides of a thin film semiconductor component |
KR1019960706045A KR970703043A (en) | 1994-04-29 | 1996-10-28 | Method for passivating the sides of a thin film semiconductor component |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9405240A FR2719416B1 (en) | 1994-04-29 | 1994-04-29 | Process for passivation of the sides of a thin-film semiconductor component. |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2719416A1 FR2719416A1 (en) | 1995-11-03 |
FR2719416B1 true FR2719416B1 (en) | 1996-07-05 |
Family
ID=9462685
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9405240A Expired - Fee Related FR2719416B1 (en) | 1994-04-29 | 1994-04-29 | Process for passivation of the sides of a thin-film semiconductor component. |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0757845A1 (en) |
JP (1) | JPH09512667A (en) |
KR (1) | KR970703043A (en) |
FR (1) | FR2719416B1 (en) |
WO (1) | WO1995030241A1 (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5752446B2 (en) * | 2010-03-15 | 2015-07-22 | 株式会社半導体エネルギー研究所 | Semiconductor device |
JP5752447B2 (en) * | 2010-03-15 | 2015-07-22 | 株式会社半導体エネルギー研究所 | Semiconductor device |
US8916425B2 (en) * | 2010-07-26 | 2014-12-23 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device |
US9230826B2 (en) | 2010-08-26 | 2016-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Etching method using mixed gas and method for manufacturing semiconductor device |
US8704230B2 (en) | 2010-08-26 | 2014-04-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US8338240B2 (en) * | 2010-10-01 | 2012-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing transistor |
JP5687133B2 (en) * | 2010-11-05 | 2015-03-18 | 三菱電機株式会社 | Semiconductor device and display device |
JP6006948B2 (en) * | 2011-03-17 | 2016-10-12 | 株式会社半導体エネルギー研究所 | Microcrystalline semiconductor film and method for manufacturing semiconductor device |
JP2014038911A (en) * | 2012-08-13 | 2014-02-27 | Sony Corp | Thin film transistor and manufacturing method of the same, and display device and electronic apparatus |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4740477A (en) * | 1985-10-04 | 1988-04-26 | General Instrument Corporation | Method for fabricating a rectifying P-N junction having improved breakdown voltage characteristics |
FR2590409B1 (en) * | 1985-11-15 | 1987-12-11 | Commissariat Energie Atomique | METHOD FOR MANUFACTURING A THIN FILM TRANSISTOR WITH A SELF-ALIGNED GRID WITH RESPECT TO THE DRAIN AND THE SOURCE THEREOF AND TRANSISTOR OBTAINED BY THE PROCESS |
JPS62252973A (en) * | 1986-04-25 | 1987-11-04 | Nec Corp | Forward staggered type thin film transistor |
GB2238427A (en) * | 1989-11-24 | 1991-05-29 | Philips Electronic Associated | Thin film diode devices and active matrix addressed display devices incorporating such |
US5130263A (en) * | 1990-04-17 | 1992-07-14 | General Electric Company | Method for photolithographically forming a selfaligned mask using back-side exposure and a non-specular reflecting layer |
JPH04171767A (en) * | 1990-11-02 | 1992-06-18 | Sharp Corp | Thin film transistor and manufacture thereof |
SG63578A1 (en) * | 1990-11-16 | 1999-03-30 | Seiko Epson Corp | Thin film semiconductor device process for fabricating the same and silicon film |
JPH04321236A (en) * | 1991-04-19 | 1992-11-11 | Sony Corp | Manufacture of field-effect transistor |
FR2675947A1 (en) * | 1991-04-23 | 1992-10-30 | France Telecom | PROCESS FOR LOCAL PASSIVATION OF A SUBSTRATE BY A HYDROGEN AMORPHOUS CARBON LAYER AND METHOD FOR MANUFACTURING THIN FILM TRANSISTORS ON THE PASSIVE SUBSTRATE. |
US5252849A (en) * | 1992-03-02 | 1993-10-12 | Motorola, Inc. | Transistor useful for further vertical integration and method of formation |
JP3260165B2 (en) * | 1992-07-30 | 2002-02-25 | 松下電器産業株式会社 | Manufacturing method of thin film element |
FR2702882B1 (en) * | 1993-03-16 | 1995-07-28 | Thomson Lcd | Method for manufacturing direct step thin film transistors. |
-
1994
- 1994-04-29 FR FR9405240A patent/FR2719416B1/en not_active Expired - Fee Related
-
1995
- 1995-05-02 JP JP7528040A patent/JPH09512667A/en active Pending
- 1995-05-02 WO PCT/FR1995/000572 patent/WO1995030241A1/en not_active Application Discontinuation
- 1995-05-02 EP EP95919467A patent/EP0757845A1/en active Pending
-
1996
- 1996-10-28 KR KR1019960706045A patent/KR970703043A/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
WO1995030241A1 (en) | 1995-11-09 |
EP0757845A1 (en) | 1997-02-12 |
KR970703043A (en) | 1997-06-10 |
FR2719416A1 (en) | 1995-11-03 |
JPH09512667A (en) | 1997-12-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |