FR2716036B1 - Couche semi-conductrice composée de haute résistance et procédé pour sa croissance cristalline. - Google Patents

Couche semi-conductrice composée de haute résistance et procédé pour sa croissance cristalline.

Info

Publication number
FR2716036B1
FR2716036B1 FR9501337A FR9501337A FR2716036B1 FR 2716036 B1 FR2716036 B1 FR 2716036B1 FR 9501337 A FR9501337 A FR 9501337A FR 9501337 A FR9501337 A FR 9501337A FR 2716036 B1 FR2716036 B1 FR 2716036B1
Authority
FR
France
Prior art keywords
semiconductor layer
high resistance
crystal growth
layer composed
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9501337A
Other languages
English (en)
Other versions
FR2716036A1 (fr
Inventor
Tatsuya Kimura
Takao Ishida
Takuji Sonoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2716036A1 publication Critical patent/FR2716036A1/fr
Application granted granted Critical
Publication of FR2716036B1 publication Critical patent/FR2716036B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/917—Deep level dopants, e.g. gold, chromium, iron or nickel

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
FR9501337A 1994-02-07 1995-02-06 Couche semi-conductrice composée de haute résistance et procédé pour sa croissance cristalline. Expired - Fee Related FR2716036B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1304794 1994-02-07

Publications (2)

Publication Number Publication Date
FR2716036A1 FR2716036A1 (fr) 1995-08-11
FR2716036B1 true FR2716036B1 (fr) 1997-07-11

Family

ID=11822214

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9501337A Expired - Fee Related FR2716036B1 (fr) 1994-02-07 1995-02-06 Couche semi-conductrice composée de haute résistance et procédé pour sa croissance cristalline.

Country Status (3)

Country Link
US (1) US5679603A (fr)
DE (1) DE19503974A1 (fr)
FR (1) FR2716036B1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5814534A (en) * 1994-08-05 1998-09-29 Mitsubishi Denki Kabushiki Kaisha Method of doping with beryllium and method of fabricating semiconductor optical element doped with beryllium
JPH08234148A (ja) * 1995-02-28 1996-09-13 Nec Corp 光半導体装置及びその製造方法
CA2328641A1 (fr) * 2000-12-15 2002-06-15 Nortel Networks Limited Couche de confinement de laser a semiconducteurs a heterostructure enfouie
US6891202B2 (en) * 2001-12-14 2005-05-10 Infinera Corporation Oxygen-doped Al-containing current blocking layers in active semiconductor devices
JPWO2005031829A1 (ja) * 2003-09-24 2006-12-07 日本電気株式会社 半導体素子および半導体集積素子
JP4792854B2 (ja) * 2005-07-25 2011-10-12 三菱電機株式会社 半導体光素子及びその製造方法
JP5463760B2 (ja) * 2009-07-02 2014-04-09 三菱電機株式会社 光導波路集積型半導体光素子およびその製造方法
KR101729597B1 (ko) 2013-08-13 2017-04-24 고쿠리츠켄큐카이하츠호진 카가쿠기쥬츠신코키코 터널 전계 효과 트랜지스터, 그 제조 방법 및 스위치 소자

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63278282A (ja) * 1987-05-08 1988-11-15 Sumitomo Electric Ind Ltd 光導電型受光素子
JP2712252B2 (ja) * 1988-03-24 1998-02-10 ソニー株式会社 高抵抗ＡｌＩｎＡｓ結晶膜及びトランジスタ
EP0403293B1 (fr) * 1989-06-16 1995-12-06 Kabushiki Kaisha Toshiba Méthode de fabrication d'un élément semiconducteur en composé du groupe III-V
JP2533212B2 (ja) * 1990-01-26 1996-09-11 富士通株式会社 半導体装置の製造方法
JP2918275B2 (ja) * 1990-03-30 1999-07-12 株式会社東芝 半導体装置
JP2973484B2 (ja) * 1990-07-13 1999-11-08 日本電気株式会社 高抵抗ＩｎＡｌＡｓ層の成長方法
JPH06338454A (ja) * 1993-04-01 1994-12-06 Japan Energy Corp 化合物半導体基板の製造方法

Also Published As

Publication number Publication date
DE19503974A1 (de) 1995-08-10
FR2716036A1 (fr) 1995-08-11
US5679603A (en) 1997-10-21

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20121031