FR2710783B1 - Dispositif à semiconducteurs optique . - Google Patents

Dispositif à semiconducteurs optique .

Info

Publication number
FR2710783B1
FR2710783B1 FR9411650A FR9411650A FR2710783B1 FR 2710783 B1 FR2710783 B1 FR 2710783B1 FR 9411650 A FR9411650 A FR 9411650A FR 9411650 A FR9411650 A FR 9411650A FR 2710783 B1 FR2710783 B1 FR 2710783B1
Authority
FR
France
Prior art keywords
semiconductor device
optical semiconductor
optical
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9411650A
Other languages
English (en)
Other versions
FR2710783A1 (fr
Inventor
Hitoshi Kagawa
Koji Yamashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to FR9500522A priority Critical patent/FR2713401B1/fr
Publication of FR2710783A1 publication Critical patent/FR2710783A1/fr
Application granted granted Critical
Publication of FR2710783B1 publication Critical patent/FR2710783B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Lasers (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
FR9411650A 1993-09-29 1994-09-29 Dispositif à semiconducteurs optique . Expired - Fee Related FR2710783B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR9500522A FR2713401B1 (fr) 1993-09-29 1995-01-18 Dispositif à semiconducteurs optique.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5242363A JPH0799368A (ja) 1993-09-29 1993-09-29 光半導体装置

Publications (2)

Publication Number Publication Date
FR2710783A1 FR2710783A1 (fr) 1995-04-07
FR2710783B1 true FR2710783B1 (fr) 1996-09-27

Family

ID=17088072

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9411650A Expired - Fee Related FR2710783B1 (fr) 1993-09-29 1994-09-29 Dispositif à semiconducteurs optique .

Country Status (4)

Country Link
US (1) US5483095A (fr)
JP (1) JPH0799368A (fr)
DE (1) DE4433521A1 (fr)
FR (1) FR2710783B1 (fr)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6265240B1 (en) * 1998-03-24 2001-07-24 Lucent Technologies, Inc. Method and apparatus for passively aligning components on semiconductor dies
KR100269330B1 (ko) * 1998-06-29 2000-12-01 윤종용 반사 방지 캡 및 스페이서를 구비하는 반도체장치, 이의 제조방법 및 이를 이용한 포토레지스트 패턴의 제조방법
US6577656B2 (en) * 2001-03-13 2003-06-10 Finisar Corporation System and method of packaging a laser/detector
US6762072B2 (en) * 2002-03-06 2004-07-13 Robert Bosch Gmbh SI wafer-cap wafer bonding method using local laser energy, device produced by the method, and system used in the method
JP3729171B2 (ja) * 2002-11-26 2005-12-21 松下電器産業株式会社 混合回路とこれを用いた高周波信号受信装置
JP3655916B2 (ja) * 2003-04-04 2005-06-02 新光電気工業株式会社 半導体装置用キャップ
DE60304839T2 (de) * 2003-05-23 2006-12-21 Agilent Technologies, Palo Alto Hermetisches Gehäuse für ein optisches oder optoelektronisches Modul
DE102005024512B3 (de) * 2005-05-26 2007-02-08 Jenoptik Laser, Optik, Systeme Gmbh Verfahren zur Herstellung von in ein Gehäuse hermetisch dicht einlötbaren Fensterelementen
US7745788B2 (en) * 2005-09-23 2010-06-29 Massachusetts Institute Of Technology Optical trapping with a semiconductor
DE102009012394A1 (de) * 2009-03-10 2010-11-18 Schott Ag Gehäusebauteil, insbesondere für optoelektronische Anwendungen
DE102009034532A1 (de) * 2009-07-23 2011-02-03 Msg Lithoglas Ag Verfahren zum Herstellen einer strukturierten Beschichtung auf einem Substrat, beschichtetes Substrat sowie Halbzeug mit einem beschichteten Substrat
JP5338788B2 (ja) * 2010-11-10 2013-11-13 船井電機株式会社 レーザホルダ、及び、それを備えた光ピックアップ
DE102013008478A1 (de) * 2013-05-13 2014-11-13 Jenoptik Optical Systems Gmbh Verfahren zur Herstellung von in ein Gehäuse hermetisch dicht einlötbaren Fensterelementen und danach hergestellte Freiformfensterelemente
DE102013104964A1 (de) 2013-05-14 2014-11-20 Micro-Hybrid Electronic Gmbh Hermetisch gasdichtes optoelektronisches oder elektrooptisches Bauteil sowie Verfahren zu seiner Herstellung
DE102014107960A1 (de) 2014-06-05 2015-12-17 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
DE102018101198A1 (de) 2018-01-19 2019-07-25 Osram Opto Semiconductors Gmbh Verfahren zum herstellen eines gehäusedeckels für ein laserbauelement und gehäusedeckel für ein laserbauelement sowie laserbauelement
WO2019205153A1 (fr) * 2018-04-28 2019-10-31 深圳市大疆创新科技有限公司 Module d'encapsulation de diode laser, appareil de transmission, appareil de télémétrie et dispositif électronique
CN111786256B (zh) * 2020-08-26 2021-10-29 广东瑞谷光网通信股份有限公司 一种光发射激光器的TO-can封装结构及其封装方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5026292Y1 (fr) * 1968-01-29 1975-08-06
FR2371497A1 (fr) * 1976-06-23 1978-06-16 Nippon Kogaku Kk Revetement anti-reflechissant pour support de resine synthetique
US4355321A (en) * 1981-02-02 1982-10-19 Varian Associates, Inc. Optoelectronic assembly including light transmissive single crystal semiconductor window
JPS584955A (ja) * 1981-06-30 1983-01-12 Shinko Electric Ind Co Ltd 金めつきされた電子部品パツケ−ジ
NL8303316A (nl) * 1983-09-28 1985-04-16 Philips Nv Werkwijze voor het vervaardigen van een inrichting voor het uitzenden van licht.
FR2554971B1 (fr) * 1983-11-14 1986-01-24 Labo Electronique Physique Dispositif a couplage de charges sensible au rayonnement infrarouge et procede de realisation d'un tel dispositif
JPS60110156A (ja) * 1983-11-21 1985-06-15 Hitachi Ltd 固体撮像素子の製造方法
GB2164789B (en) * 1984-09-19 1987-11-11 Philips Electronic Associated Pyroelectric infra-red detector
US4810671A (en) * 1986-06-12 1989-03-07 Intel Corporation Process for bonding die to substrate using a gold/silicon seed
US5106671A (en) * 1990-12-10 1992-04-21 Ford Motor Company Transparent anti-reflective coating

Also Published As

Publication number Publication date
DE4433521A1 (de) 1995-03-30
FR2710783A1 (fr) 1995-04-07
JPH0799368A (ja) 1995-04-11
US5483095A (en) 1996-01-09

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20070531