FR2705832B1 - Procédé de réalisation d'un cordon d'étanchéité et de tenue mécanique entre un substrat et une puce hybridée par billes sur le substrat. - Google Patents

Procédé de réalisation d'un cordon d'étanchéité et de tenue mécanique entre un substrat et une puce hybridée par billes sur le substrat.

Info

Publication number
FR2705832B1
FR2705832B1 FR9306417A FR9306417A FR2705832B1 FR 2705832 B1 FR2705832 B1 FR 2705832B1 FR 9306417 A FR9306417 A FR 9306417A FR 9306417 A FR9306417 A FR 9306417A FR 2705832 B1 FR2705832 B1 FR 2705832B1
Authority
FR
France
Prior art keywords
substrate
chip
ring
mechanical strength
sealing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR9306417A
Other languages
English (en)
Other versions
FR2705832A1 (fr
Inventor
Caillat Patrice
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR9306417A priority Critical patent/FR2705832B1/fr
Priority to EP94917059A priority patent/EP0700581A1/fr
Priority to PCT/FR1994/000620 priority patent/WO1994028581A1/fr
Priority to JP7500316A priority patent/JPH08510599A/ja
Publication of FR2705832A1 publication Critical patent/FR2705832A1/fr
Application granted granted Critical
Publication of FR2705832B1 publication Critical patent/FR2705832B1/fr
Priority to US09/298,696 priority patent/US6238951B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13109—Indium [In] as principal constituent
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16108—Disposition the bump connector not being orthogonal to the surface
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    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L2224/731—Location prior to the connecting process
    • H01L2224/73101—Location prior to the connecting process on the same surface
    • H01L2224/73103—Bump and layer connectors
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    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8112—Aligning
    • H01L2224/81143—Passive alignment, i.e. self alignment, e.g. using surface energy, chemical reactions, thermal equilibrium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
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    • H01L2924/01005—Boron [B]
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    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
FR9306417A 1993-05-28 1993-05-28 Procédé de réalisation d'un cordon d'étanchéité et de tenue mécanique entre un substrat et une puce hybridée par billes sur le substrat. Expired - Lifetime FR2705832B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR9306417A FR2705832B1 (fr) 1993-05-28 1993-05-28 Procédé de réalisation d'un cordon d'étanchéité et de tenue mécanique entre un substrat et une puce hybridée par billes sur le substrat.
EP94917059A EP0700581A1 (fr) 1993-05-28 1994-05-26 Procede de realisation d'un cordon d'etancheite et de tenue mecanique entre un substrat et une puce hybridee par billes sur le substrat
PCT/FR1994/000620 WO1994028581A1 (fr) 1993-05-28 1994-05-26 Procede de realisation d'un cordon d'etancheite et de tenue mecanique entre un substrat et une puce hybridee par billes sur le substrat
JP7500316A JPH08510599A (ja) 1993-05-28 1994-05-26 基板と該基板上の***によりハイブリッド化されたチツプとの間の密封および機械的強度コードの製造方法
US09/298,696 US6238951B1 (en) 1993-05-28 1999-04-23 Process for producing a sealing and mechanical strength ring between a substrate and a chip hybridized by bumps on the substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9306417A FR2705832B1 (fr) 1993-05-28 1993-05-28 Procédé de réalisation d'un cordon d'étanchéité et de tenue mécanique entre un substrat et une puce hybridée par billes sur le substrat.

Publications (2)

Publication Number Publication Date
FR2705832A1 FR2705832A1 (fr) 1994-12-02
FR2705832B1 true FR2705832B1 (fr) 1995-06-30

Family

ID=9447546

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9306417A Expired - Lifetime FR2705832B1 (fr) 1993-05-28 1993-05-28 Procédé de réalisation d'un cordon d'étanchéité et de tenue mécanique entre un substrat et une puce hybridée par billes sur le substrat.

Country Status (5)

Country Link
US (1) US6238951B1 (fr)
EP (1) EP0700581A1 (fr)
JP (1) JPH08510599A (fr)
FR (1) FR2705832B1 (fr)
WO (1) WO1994028581A1 (fr)

Cited By (5)

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US7659621B2 (en) 2003-10-14 2010-02-09 Unitive International Limited Solder structures for out of plane connections
US7674701B2 (en) 2006-02-08 2010-03-09 Amkor Technology, Inc. Methods of forming metal layers using multi-layer lift-off patterns
US7839000B2 (en) 2002-06-25 2010-11-23 Unitive International Limited Solder structures including barrier layers with nickel and/or copper
US7879715B2 (en) 2002-06-25 2011-02-01 Unitive International Limited Methods of forming electronic structures including conductive shunt layers and related structures
US7932615B2 (en) 2006-02-08 2011-04-26 Amkor Technology, Inc. Electronic devices including solder bumps on compliant dielectric layers

Families Citing this family (35)

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US6388203B1 (en) 1995-04-04 2002-05-14 Unitive International Limited Controlled-shaped solder reservoirs for increasing the volume of solder bumps, and structures formed thereby
CN1179412C (zh) 1995-04-05 2004-12-08 统一国际有限公司 具有伸长部分和展宽部分的焊料结构及其形成方法
FR2748849B1 (fr) * 1996-05-20 1998-06-19 Commissariat Energie Atomique Systeme de composants a hybrider et procede d'hybridation autorisant des dilatations thermiques
EP0899787A3 (fr) * 1997-07-25 2001-05-16 Mcnc Réservoirs de soudure formés-contrôlés pour augmenter le volume de bosses de soudure et dtructures ainsi formées
FR2780200B1 (fr) * 1998-06-22 2003-09-05 Commissariat Energie Atomique Dispositif et procede de formation d'un dispositif presentant une cavite a atmosphere controlee
DE19938868B4 (de) * 1999-08-17 2005-11-24 Siemens Ag Sensoreinrichtung und Verfahren zum Herstellen einer Sensoreinrichtung
US6538898B1 (en) * 2000-05-01 2003-03-25 Micron Technology, Inc. Method and apparatus of die attachment for BOC and F/C surface mount
EP1168429A1 (fr) * 2000-06-28 2002-01-02 Telefonaktiebolaget L M Ericsson (Publ) Puce de circuit intégré et procédé pour monter celle-ci sur une carte de circuit
JP4659257B2 (ja) * 2001-04-18 2011-03-30 パナソニック株式会社 電子部品組立体の製造方法
JP2003124595A (ja) * 2001-10-11 2003-04-25 Alps Electric Co Ltd 電子回路ユニット
US6887769B2 (en) * 2002-02-06 2005-05-03 Intel Corporation Dielectric recess for wafer-to-wafer and die-to-die metal bonding and method of fabricating the same
US6661085B2 (en) * 2002-02-06 2003-12-09 Intel Corporation Barrier structure against corrosion and contamination in three-dimensional (3-D) wafer-to-wafer vertical stack
US6975016B2 (en) * 2002-02-06 2005-12-13 Intel Corporation Wafer bonding using a flexible bladder press and thinned wafers for three-dimensional (3D) wafer-to-wafer vertical stack integration, and application thereof
US6762076B2 (en) 2002-02-20 2004-07-13 Intel Corporation Process of vertically stacking multiple wafers supporting different active integrated circuit (IC) devices
US7238550B2 (en) * 2002-02-26 2007-07-03 Tandon Group Ltd. Methods and apparatus for fabricating Chip-on-Board modules
US7531898B2 (en) * 2002-06-25 2009-05-12 Unitive International Limited Non-Circular via holes for bumping pads and related structures
EP2280003B1 (fr) * 2002-07-15 2014-04-02 Symphony Evolution, Inc. Procédé pour la préparation de modulateurs de kinases de type récepteur
KR100447851B1 (ko) * 2002-11-14 2004-09-08 삼성전자주식회사 반도체장치의 플립칩 방식 측면 접합 본딩 방법 및 이를이용한 ｍｅｍｓ 소자 패키지 및 패키지 방법
TWI225899B (en) * 2003-02-18 2005-01-01 Unitive Semiconductor Taiwan C Etching solution and method for manufacturing conductive bump using the etching solution to selectively remove barrier layer
FR2865467B1 (fr) * 2004-01-22 2007-01-05 Commissariat Energie Atomique Dispositif et procede pour assurer l'hermeticite d'une cavite en presence d'un via
TW200603698A (en) * 2004-04-13 2006-01-16 Unitive International Ltd Methods of forming solder bumps on exposed metal pads and related structures
US7607560B2 (en) * 2004-05-14 2009-10-27 Intevac, Inc. Semiconductor die attachment for high vacuum tubes
US7012328B2 (en) * 2004-05-14 2006-03-14 Intevac, Inc. Semiconductor die attachment for high vacuum tubes
US7087538B2 (en) * 2004-08-16 2006-08-08 Intel Corporation Method to fill the gap between coupled wafers
US20060205170A1 (en) * 2005-03-09 2006-09-14 Rinne Glenn A Methods of forming self-healing metal-insulator-metal (MIM) structures and related devices
FR2890065B1 (fr) * 2005-08-30 2007-09-21 Commissariat Energie Atomique Procede d'encapsulation d'un composant, notamment electrique ou electronique au moyen d'un cordon de soudure ameliore
FR2890066B1 (fr) * 2005-08-30 2007-09-21 Commissariat Energie Atomique Procede pour la realisation de moyens de connexion et/ou de soudure d'un composant
FR2890067B1 (fr) * 2005-08-30 2007-09-21 Commissariat Energie Atomique Procede de scellement ou de soudure de deux elements entre eux
US7547576B2 (en) * 2006-02-01 2009-06-16 International Business Machines Corporation Solder wall structure in flip-chip technologies
US8613996B2 (en) 2009-10-21 2013-12-24 International Business Machines Corporation Polymeric edge seal for bonded substrates
US8287980B2 (en) 2009-10-29 2012-10-16 International Business Machines Corporation Edge protection seal for bonded substrates
JP6287445B2 (ja) * 2014-03-26 2018-03-07 三菱電機株式会社 半導体装置及びその製造方法
FR3042308B1 (fr) 2015-10-13 2018-02-16 Commissariat A L'energie Atomique Et Aux Energies Alternatives Boitier pour composants microelectroniques
FR3042642B1 (fr) 2015-10-15 2022-11-25 Commissariat Energie Atomique Procede de realisation d'un dispositif comprenant une micro-batterie
IT201700103511A1 (it) * 2017-09-15 2019-03-15 St Microelectronics Srl Dispositivo microelettronico dotato di connessioni protette e relativo processo di fabbricazione

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US8294269B2 (en) 2002-06-25 2012-10-23 Unitive International Electronic structures including conductive layers comprising copper and having a thickness of at least 0.5 micrometers
US7659621B2 (en) 2003-10-14 2010-02-09 Unitive International Limited Solder structures for out of plane connections
US7674701B2 (en) 2006-02-08 2010-03-09 Amkor Technology, Inc. Methods of forming metal layers using multi-layer lift-off patterns
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US6238951B1 (en) 2001-05-29
FR2705832A1 (fr) 1994-12-02
EP0700581A1 (fr) 1996-03-13
JPH08510599A (ja) 1996-11-05
WO1994028581A1 (fr) 1994-12-08

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