FR2705832B1 - Procédé de réalisation d'un cordon d'étanchéité et de tenue mécanique entre un substrat et une puce hybridée par billes sur le substrat. - Google Patents
Procédé de réalisation d'un cordon d'étanchéité et de tenue mécanique entre un substrat et une puce hybridée par billes sur le substrat.Info
- Publication number
- FR2705832B1 FR2705832B1 FR9306417A FR9306417A FR2705832B1 FR 2705832 B1 FR2705832 B1 FR 2705832B1 FR 9306417 A FR9306417 A FR 9306417A FR 9306417 A FR9306417 A FR 9306417A FR 2705832 B1 FR2705832 B1 FR 2705832B1
- Authority
- FR
- France
- Prior art keywords
- substrate
- chip
- ring
- mechanical strength
- sealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/13109—Indium [In] as principal constituent
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16108—Disposition the bump connector not being orthogonal to the surface
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/731—Location prior to the connecting process
- H01L2224/73101—Location prior to the connecting process on the same surface
- H01L2224/73103—Bump and layer connectors
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- H01L2224/732—Location after the connecting process
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- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8112—Aligning
- H01L2224/81143—Passive alignment, i.e. self alignment, e.g. using surface energy, chemical reactions, thermal equilibrium
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- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
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- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
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Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Wire Bonding (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9306417A FR2705832B1 (fr) | 1993-05-28 | 1993-05-28 | Procédé de réalisation d'un cordon d'étanchéité et de tenue mécanique entre un substrat et une puce hybridée par billes sur le substrat. |
EP94917059A EP0700581A1 (fr) | 1993-05-28 | 1994-05-26 | Procede de realisation d'un cordon d'etancheite et de tenue mecanique entre un substrat et une puce hybridee par billes sur le substrat |
PCT/FR1994/000620 WO1994028581A1 (fr) | 1993-05-28 | 1994-05-26 | Procede de realisation d'un cordon d'etancheite et de tenue mecanique entre un substrat et une puce hybridee par billes sur le substrat |
JP7500316A JPH08510599A (ja) | 1993-05-28 | 1994-05-26 | 基板と該基板上の***によりハイブリッド化されたチツプとの間の密封および機械的強度コードの製造方法 |
US09/298,696 US6238951B1 (en) | 1993-05-28 | 1999-04-23 | Process for producing a sealing and mechanical strength ring between a substrate and a chip hybridized by bumps on the substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9306417A FR2705832B1 (fr) | 1993-05-28 | 1993-05-28 | Procédé de réalisation d'un cordon d'étanchéité et de tenue mécanique entre un substrat et une puce hybridée par billes sur le substrat. |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2705832A1 FR2705832A1 (fr) | 1994-12-02 |
FR2705832B1 true FR2705832B1 (fr) | 1995-06-30 |
Family
ID=9447546
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9306417A Expired - Lifetime FR2705832B1 (fr) | 1993-05-28 | 1993-05-28 | Procédé de réalisation d'un cordon d'étanchéité et de tenue mécanique entre un substrat et une puce hybridée par billes sur le substrat. |
Country Status (5)
Country | Link |
---|---|
US (1) | US6238951B1 (fr) |
EP (1) | EP0700581A1 (fr) |
JP (1) | JPH08510599A (fr) |
FR (1) | FR2705832B1 (fr) |
WO (1) | WO1994028581A1 (fr) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7659621B2 (en) | 2003-10-14 | 2010-02-09 | Unitive International Limited | Solder structures for out of plane connections |
US7674701B2 (en) | 2006-02-08 | 2010-03-09 | Amkor Technology, Inc. | Methods of forming metal layers using multi-layer lift-off patterns |
US7839000B2 (en) | 2002-06-25 | 2010-11-23 | Unitive International Limited | Solder structures including barrier layers with nickel and/or copper |
US7879715B2 (en) | 2002-06-25 | 2011-02-01 | Unitive International Limited | Methods of forming electronic structures including conductive shunt layers and related structures |
US7932615B2 (en) | 2006-02-08 | 2011-04-26 | Amkor Technology, Inc. | Electronic devices including solder bumps on compliant dielectric layers |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6388203B1 (en) | 1995-04-04 | 2002-05-14 | Unitive International Limited | Controlled-shaped solder reservoirs for increasing the volume of solder bumps, and structures formed thereby |
CN1179412C (zh) | 1995-04-05 | 2004-12-08 | 统一国际有限公司 | 具有伸长部分和展宽部分的焊料结构及其形成方法 |
FR2748849B1 (fr) * | 1996-05-20 | 1998-06-19 | Commissariat Energie Atomique | Systeme de composants a hybrider et procede d'hybridation autorisant des dilatations thermiques |
EP0899787A3 (fr) * | 1997-07-25 | 2001-05-16 | Mcnc | Réservoirs de soudure formés-contrôlés pour augmenter le volume de bosses de soudure et dtructures ainsi formées |
FR2780200B1 (fr) * | 1998-06-22 | 2003-09-05 | Commissariat Energie Atomique | Dispositif et procede de formation d'un dispositif presentant une cavite a atmosphere controlee |
DE19938868B4 (de) * | 1999-08-17 | 2005-11-24 | Siemens Ag | Sensoreinrichtung und Verfahren zum Herstellen einer Sensoreinrichtung |
US6538898B1 (en) * | 2000-05-01 | 2003-03-25 | Micron Technology, Inc. | Method and apparatus of die attachment for BOC and F/C surface mount |
EP1168429A1 (fr) * | 2000-06-28 | 2002-01-02 | Telefonaktiebolaget L M Ericsson (Publ) | Puce de circuit intégré et procédé pour monter celle-ci sur une carte de circuit |
JP4659257B2 (ja) * | 2001-04-18 | 2011-03-30 | パナソニック株式会社 | 電子部品組立体の製造方法 |
JP2003124595A (ja) * | 2001-10-11 | 2003-04-25 | Alps Electric Co Ltd | 電子回路ユニット |
US6887769B2 (en) * | 2002-02-06 | 2005-05-03 | Intel Corporation | Dielectric recess for wafer-to-wafer and die-to-die metal bonding and method of fabricating the same |
US6661085B2 (en) * | 2002-02-06 | 2003-12-09 | Intel Corporation | Barrier structure against corrosion and contamination in three-dimensional (3-D) wafer-to-wafer vertical stack |
US6975016B2 (en) * | 2002-02-06 | 2005-12-13 | Intel Corporation | Wafer bonding using a flexible bladder press and thinned wafers for three-dimensional (3D) wafer-to-wafer vertical stack integration, and application thereof |
US6762076B2 (en) | 2002-02-20 | 2004-07-13 | Intel Corporation | Process of vertically stacking multiple wafers supporting different active integrated circuit (IC) devices |
US7238550B2 (en) * | 2002-02-26 | 2007-07-03 | Tandon Group Ltd. | Methods and apparatus for fabricating Chip-on-Board modules |
US7531898B2 (en) * | 2002-06-25 | 2009-05-12 | Unitive International Limited | Non-Circular via holes for bumping pads and related structures |
EP2280003B1 (fr) * | 2002-07-15 | 2014-04-02 | Symphony Evolution, Inc. | Procédé pour la préparation de modulateurs de kinases de type récepteur |
KR100447851B1 (ko) * | 2002-11-14 | 2004-09-08 | 삼성전자주식회사 | 반도체장치의 플립칩 방식 측면 접합 본딩 방법 및 이를이용한 mems 소자 패키지 및 패키지 방법 |
TWI225899B (en) * | 2003-02-18 | 2005-01-01 | Unitive Semiconductor Taiwan C | Etching solution and method for manufacturing conductive bump using the etching solution to selectively remove barrier layer |
FR2865467B1 (fr) * | 2004-01-22 | 2007-01-05 | Commissariat Energie Atomique | Dispositif et procede pour assurer l'hermeticite d'une cavite en presence d'un via |
TW200603698A (en) * | 2004-04-13 | 2006-01-16 | Unitive International Ltd | Methods of forming solder bumps on exposed metal pads and related structures |
US7607560B2 (en) * | 2004-05-14 | 2009-10-27 | Intevac, Inc. | Semiconductor die attachment for high vacuum tubes |
US7012328B2 (en) * | 2004-05-14 | 2006-03-14 | Intevac, Inc. | Semiconductor die attachment for high vacuum tubes |
US7087538B2 (en) * | 2004-08-16 | 2006-08-08 | Intel Corporation | Method to fill the gap between coupled wafers |
US20060205170A1 (en) * | 2005-03-09 | 2006-09-14 | Rinne Glenn A | Methods of forming self-healing metal-insulator-metal (MIM) structures and related devices |
FR2890065B1 (fr) * | 2005-08-30 | 2007-09-21 | Commissariat Energie Atomique | Procede d'encapsulation d'un composant, notamment electrique ou electronique au moyen d'un cordon de soudure ameliore |
FR2890066B1 (fr) * | 2005-08-30 | 2007-09-21 | Commissariat Energie Atomique | Procede pour la realisation de moyens de connexion et/ou de soudure d'un composant |
FR2890067B1 (fr) * | 2005-08-30 | 2007-09-21 | Commissariat Energie Atomique | Procede de scellement ou de soudure de deux elements entre eux |
US7547576B2 (en) * | 2006-02-01 | 2009-06-16 | International Business Machines Corporation | Solder wall structure in flip-chip technologies |
US8613996B2 (en) | 2009-10-21 | 2013-12-24 | International Business Machines Corporation | Polymeric edge seal for bonded substrates |
US8287980B2 (en) | 2009-10-29 | 2012-10-16 | International Business Machines Corporation | Edge protection seal for bonded substrates |
JP6287445B2 (ja) * | 2014-03-26 | 2018-03-07 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
FR3042308B1 (fr) | 2015-10-13 | 2018-02-16 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Boitier pour composants microelectroniques |
FR3042642B1 (fr) | 2015-10-15 | 2022-11-25 | Commissariat Energie Atomique | Procede de realisation d'un dispositif comprenant une micro-batterie |
IT201700103511A1 (it) * | 2017-09-15 | 2019-03-15 | St Microelectronics Srl | Dispositivo microelettronico dotato di connessioni protette e relativo processo di fabbricazione |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4831507B1 (fr) * | 1969-07-10 | 1973-09-29 | ||
US3591839A (en) * | 1969-08-27 | 1971-07-06 | Siliconix Inc | Micro-electronic circuit with novel hermetic sealing structure and method of manufacture |
US5043139A (en) * | 1990-10-09 | 1991-08-27 | Eastman Kodak Company | Amalgam preform, method of forming the preform and method of bonding therewith |
JPH0521654A (ja) * | 1991-07-10 | 1993-01-29 | Sumitomo Electric Ind Ltd | 半導体デバイス |
US5492863A (en) * | 1994-10-19 | 1996-02-20 | Motorola, Inc. | Method for forming conductive bumps on a semiconductor device |
JPH1174413A (ja) * | 1997-07-01 | 1999-03-16 | Sony Corp | リードフレームとリードフレームの製造方法と半導体装置と半導体装置の組立方法と電子機器 |
-
1993
- 1993-05-28 FR FR9306417A patent/FR2705832B1/fr not_active Expired - Lifetime
-
1994
- 1994-05-26 WO PCT/FR1994/000620 patent/WO1994028581A1/fr not_active Application Discontinuation
- 1994-05-26 JP JP7500316A patent/JPH08510599A/ja active Pending
- 1994-05-26 EP EP94917059A patent/EP0700581A1/fr not_active Ceased
-
1999
- 1999-04-23 US US09/298,696 patent/US6238951B1/en not_active Expired - Lifetime
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7839000B2 (en) | 2002-06-25 | 2010-11-23 | Unitive International Limited | Solder structures including barrier layers with nickel and/or copper |
US7879715B2 (en) | 2002-06-25 | 2011-02-01 | Unitive International Limited | Methods of forming electronic structures including conductive shunt layers and related structures |
US8294269B2 (en) | 2002-06-25 | 2012-10-23 | Unitive International | Electronic structures including conductive layers comprising copper and having a thickness of at least 0.5 micrometers |
US7659621B2 (en) | 2003-10-14 | 2010-02-09 | Unitive International Limited | Solder structures for out of plane connections |
US7674701B2 (en) | 2006-02-08 | 2010-03-09 | Amkor Technology, Inc. | Methods of forming metal layers using multi-layer lift-off patterns |
US7932615B2 (en) | 2006-02-08 | 2011-04-26 | Amkor Technology, Inc. | Electronic devices including solder bumps on compliant dielectric layers |
Also Published As
Publication number | Publication date |
---|---|
US6238951B1 (en) | 2001-05-29 |
FR2705832A1 (fr) | 1994-12-02 |
EP0700581A1 (fr) | 1996-03-13 |
JPH08510599A (ja) | 1996-11-05 |
WO1994028581A1 (fr) | 1994-12-08 |
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