FR2697109B1 - SEMICONDUCTOR CIRCUIT HAVING AN IMPROVED LOCATION CONFIGURATION. - Google Patents

SEMICONDUCTOR CIRCUIT HAVING AN IMPROVED LOCATION CONFIGURATION.

Info

Publication number
FR2697109B1
FR2697109B1 FR9312493A FR9312493A FR2697109B1 FR 2697109 B1 FR2697109 B1 FR 2697109B1 FR 9312493 A FR9312493 A FR 9312493A FR 9312493 A FR9312493 A FR 9312493A FR 2697109 B1 FR2697109 B1 FR 2697109B1
Authority
FR
France
Prior art keywords
semiconductor circuit
location configuration
improved location
improved
configuration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9312493A
Other languages
French (fr)
Other versions
FR2697109A1 (en
Inventor
Masaya Kitagawa
Shigeru Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of FR2697109A1 publication Critical patent/FR2697109A1/en
Application granted granted Critical
Publication of FR2697109B1 publication Critical patent/FR2697109B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11803—Masterslice integrated circuits using field effect technology
    • H01L27/11807—CMOS gate arrays

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR9312493A 1992-10-20 1993-10-20 SEMICONDUCTOR CIRCUIT HAVING AN IMPROVED LOCATION CONFIGURATION. Expired - Fee Related FR2697109B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28206192 1992-10-20

Publications (2)

Publication Number Publication Date
FR2697109A1 FR2697109A1 (en) 1994-04-22
FR2697109B1 true FR2697109B1 (en) 1996-05-24

Family

ID=17647644

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9312493A Expired - Fee Related FR2697109B1 (en) 1992-10-20 1993-10-20 SEMICONDUCTOR CIRCUIT HAVING AN IMPROVED LOCATION CONFIGURATION.

Country Status (3)

Country Link
US (1) US5489860A (en)
KR (1) KR970008327B1 (en)
FR (1) FR2697109B1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6097221A (en) * 1995-12-11 2000-08-01 Kawasaki Steel Corporation Semiconductor integrated circuit capable of realizing logic functions
US6480032B1 (en) * 1999-03-04 2002-11-12 Intel Corporation Gate array architecture
US6331800B1 (en) * 2000-07-21 2001-12-18 Hewlett-Packard Company Post-silicon methods for adjusting the rise/fall times of clock edges
US6917084B2 (en) * 2003-09-05 2005-07-12 Texas Instruments Incorporated Interdigitated layout methodology for amplifier and H-bridge output stages
JP5552775B2 (en) 2009-08-28 2014-07-16 ソニー株式会社 Semiconductor integrated circuit
US8698205B2 (en) * 2012-05-25 2014-04-15 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit layout having mixed track standard cell
US9576644B2 (en) 2015-04-27 2017-02-21 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit chip having two types of memory cells
US11508735B2 (en) 2019-08-28 2022-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Cell manufacturing
US11296080B2 (en) 2020-06-15 2022-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain regions of semiconductor devices and methods of forming the same
US11990511B2 (en) 2021-08-27 2024-05-21 Taiwan Semiconductor Manufacturing Co., Ltd. Source/drain device and method of forming thereof

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6017932A (en) * 1983-07-09 1985-01-29 Fujitsu Ltd Gate array
JPS62276852A (en) * 1986-05-23 1987-12-01 Mitsubishi Electric Corp Semiconductor integrated circuit device
JPH0831578B2 (en) * 1986-06-19 1996-03-27 日本電気株式会社 Master-slice type gate semiconductor integrated circuit device
JPS63313835A (en) * 1987-06-17 1988-12-21 Mitsubishi Electric Corp Semiconductor integrated circuit
DE68925897T2 (en) * 1989-04-28 1996-10-02 Ibm Gate array cell, consisting of FETs of various and optimized sizes
US5175605A (en) * 1990-02-05 1992-12-29 Rockwell International Corporation Single event upset hardening circuits, devices and methods
JPH03231462A (en) * 1990-02-06 1991-10-15 Nec Corp Semiconductor integrated circuit

Also Published As

Publication number Publication date
US5489860A (en) 1996-02-06
KR940010175A (en) 1994-05-24
FR2697109A1 (en) 1994-04-22
KR970008327B1 (en) 1997-05-23

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Legal Events

Date Code Title Description
TP Transmission of property
ST Notification of lapse

Effective date: 20110630