FR2694131B1 - Procede et installation pour la fabrication d'un composant, notamment d'un composant optique, et composant optique ainsi obtenu. - Google Patents

Procede et installation pour la fabrication d'un composant, notamment d'un composant optique, et composant optique ainsi obtenu.

Info

Publication number
FR2694131B1
FR2694131B1 FR9308825A FR9308825A FR2694131B1 FR 2694131 B1 FR2694131 B1 FR 2694131B1 FR 9308825 A FR9308825 A FR 9308825A FR 9308825 A FR9308825 A FR 9308825A FR 2694131 B1 FR2694131 B1 FR 2694131B1
Authority
FR
France
Prior art keywords
component
optical component
manufacture
installation
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9308825A
Other languages
English (en)
Other versions
FR2694131A1 (fr
Inventor
Helmut Rudigier
Johannes Edlinger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OC Oerlikon Balzers AG
Original Assignee
Balzers AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CH229292A external-priority patent/CH686461A5/de
Application filed by Balzers AG filed Critical Balzers AG
Publication of FR2694131A1 publication Critical patent/FR2694131A1/fr
Application granted granted Critical
Publication of FR2694131B1 publication Critical patent/FR2694131B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
  • Optical Filters (AREA)
  • Surface Treatment Of Glass (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
FR9308825A 1992-07-21 1993-07-19 Procede et installation pour la fabrication d'un composant, notamment d'un composant optique, et composant optique ainsi obtenu. Expired - Fee Related FR2694131B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CH229292A CH686461A5 (de) 1992-07-21 1992-07-21 Verfahren zur Herstellung eines Bauelementes, optisches Bauelement und Anlage zur Durchfuehrung des Verfahrens.
US97008092A 1992-11-02 1992-11-02

Publications (2)

Publication Number Publication Date
FR2694131A1 FR2694131A1 (fr) 1994-01-28
FR2694131B1 true FR2694131B1 (fr) 1996-09-27

Family

ID=25690035

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9308825A Expired - Fee Related FR2694131B1 (fr) 1992-07-21 1993-07-19 Procede et installation pour la fabrication d'un composant, notamment d'un composant optique, et composant optique ainsi obtenu.

Country Status (6)

Country Link
US (1) US5667700A (fr)
JP (1) JP3626217B2 (fr)
DE (1) DE4324325B4 (fr)
FR (1) FR2694131B1 (fr)
GB (1) GB2271087B (fr)
NL (1) NL195025C (fr)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19538634C2 (de) * 1995-10-17 1997-09-04 Itt Ind Gmbh Deutsche Verfahren zum Vereinzeln von elektronischen Elementen aus einem Halbleiterwafer
DE19504434C1 (de) * 1995-02-10 1996-05-15 Siemens Ag Verfahren zur Herstellung siliziumhaltiger Masken
DE19641303B4 (de) * 1995-10-10 2006-11-23 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung eines optischen Elementes
US6120942A (en) 1997-02-18 2000-09-19 Micron Technology, Inc. Method for making a photomask with multiple absorption levels
JPH11237503A (ja) * 1997-12-03 1999-08-31 Canon Inc 回折光学素子及びそれを有する光学系
US6680900B1 (en) * 1999-06-04 2004-01-20 Ricoh Company, Ltd. Optical-pickup slider, manufacturing method thereof, probe and manufacturing method thereof, and probe array and manufacturing method thereof
JP3610863B2 (ja) * 2000-02-10 2005-01-19 株式会社村田製作所 誘電体線路の製造方法および誘電体線路
US6716362B1 (en) * 2000-10-24 2004-04-06 International Business Machines Corporation Method for thin film laser reflectance correlation for substrate etch endpoint
DE10111501B4 (de) * 2001-03-09 2019-03-21 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement und Verfahren zu dessen Herstellung
US6818493B2 (en) 2001-07-26 2004-11-16 Motorola, Inc. Selective metal oxide removal performed in a reaction chamber in the absence of RF activation
US6902681B2 (en) * 2002-06-26 2005-06-07 Applied Materials Inc Method for plasma etching of high-K dielectric materials
EP1591561A1 (fr) * 2004-04-28 2005-11-02 ALSTOM (Switzerland) Ltd Méthode pour l'application d'un revêtement protecteur sur une pièce soumettant à haute température
US20070221616A1 (en) * 2006-03-24 2007-09-27 Yi-Tyng Wu Etching method
JP4351229B2 (ja) * 2006-06-28 2009-10-28 ジーイー・メディカル・システムズ・グローバル・テクノロジー・カンパニー・エルエルシー 超音波探触子の製造方法
US8387230B2 (en) * 2010-08-27 2013-03-05 Transducerworks, Llc Method of making an ultrasonic transducer system
DE102013212957A1 (de) * 2013-07-03 2014-07-17 Carl Zeiss Sms Gmbh Verfahren zur Entladung von Photolithographiemasken und Vorrichtung hierfür
JP2018152418A (ja) * 2017-03-10 2018-09-27 東芝メモリ株式会社 半導体装置の製造方法及びエッチング用マスク
US11587362B2 (en) 2020-12-16 2023-02-21 Lenovo (Singapore) Pte. Ltd. Techniques for determining sign language gesture partially shown in image(s)
DE102022208658A1 (de) * 2022-08-22 2024-02-22 Carl Zeiss Smt Gmbh Zwischenprodukt zur Herstellung eines optischen Elements für eine Projektionsbelichtungsanlage, optisches Element für eine Projektionsbelichtungsanlage, Verfahren zur Herstellung eines Zwischenprodukts und Verfahren zur Herstellung eines optischen Elements

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3880684A (en) * 1973-08-03 1975-04-29 Mitsubishi Electric Corp Process for preparing semiconductor
US4141621A (en) * 1977-08-05 1979-02-27 Honeywell Inc. Three layer waveguide for thin film lens fabrication
US4270999A (en) * 1979-09-28 1981-06-02 International Business Machines Corporation Method and apparatus for gas feed control in a dry etching process
EP0049799B1 (fr) * 1980-10-09 1986-02-12 Dai Nippon Insatsu Kabushiki Kaisha Photoréserve vierge et photomasque
DE3040489A1 (de) * 1980-10-28 1982-05-27 Dr. Johannes Heidenhain Gmbh, 8225 Traunreut Aufzeichnungstraeger mit einer aufzeichnung hoher informationsdichte
US4569717A (en) * 1983-05-24 1986-02-11 Dainippon Screen Mfg. Co., Ltd. Method of surface treatment
US4534620A (en) * 1983-07-11 1985-08-13 Rca Corporation Standardized multi-stack dielectric-layer filter blank and method for fabricating color-encoding filter therefrom
DE3442208C3 (de) * 1984-11-19 1998-06-10 Leybold Ag Verfahren und Vorrichtung zum Herstellen harter Kohlenstoffschichten
DE3633386A1 (de) * 1986-10-01 1988-04-14 Leybold Ag Verfahren und vorrichtung zum behandeln von substraten im vakuum
US4780175A (en) * 1986-10-27 1988-10-25 Sharp Kabushiki Kaisha Method for the production of an optical phase-shifting board
JPH0797216B2 (ja) * 1986-10-29 1995-10-18 インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション マスクの製造方法
US4684436A (en) * 1986-10-29 1987-08-04 International Business Machines Corp. Method of simultaneously etching personality and select
US4923772A (en) * 1986-10-29 1990-05-08 Kirch Steven J High energy laser mask and method of making same
KR0129663B1 (ko) * 1988-01-20 1998-04-06 고다까 토시오 에칭 장치 및 방법
GB8916133D0 (en) * 1989-07-14 1989-08-31 Raychem Ltd Laser machining
US5082685A (en) * 1989-07-24 1992-01-21 Tdk Corporation Method of conducting plasma treatment
EP0716160B1 (fr) * 1989-11-13 2000-01-26 Optical Coating Laboratory, Inc. Géométrie et configurations d'un appareillage de pulvérisation à magnétron
JP2599513B2 (ja) * 1990-06-25 1997-04-09 インターナショナル・ビジネス・マシーンズ・コーポレイション アブレーション・マスク
JP3004699B2 (ja) * 1990-09-07 2000-01-31 東京エレクトロン株式会社 プラズマ処理方法
US5074456A (en) * 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes
US5252516A (en) * 1992-02-20 1993-10-12 International Business Machines Corporation Method for producing interlevel stud vias
US5254202A (en) * 1992-04-07 1993-10-19 International Business Machines Corporation Fabrication of laser ablation masks by wet etching

Also Published As

Publication number Publication date
DE4324325B4 (de) 2006-09-14
NL9301283A (nl) 1994-02-16
GB2271087B (en) 1997-01-08
DE4324325A1 (de) 1994-01-27
FR2694131A1 (fr) 1994-01-28
US5667700A (en) 1997-09-16
JPH06279059A (ja) 1994-10-04
NL195025C (nl) 2003-06-18
GB9314993D0 (en) 1993-09-01
GB2271087A (en) 1994-04-06
JP3626217B2 (ja) 2005-03-02

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20110331