FR2670050B1 - Detecteur optoelectronique a semiconducteurs. - Google Patents

Detecteur optoelectronique a semiconducteurs.

Info

Publication number
FR2670050B1
FR2670050B1 FR9013946A FR9013946A FR2670050B1 FR 2670050 B1 FR2670050 B1 FR 2670050B1 FR 9013946 A FR9013946 A FR 9013946A FR 9013946 A FR9013946 A FR 9013946A FR 2670050 B1 FR2670050 B1 FR 2670050B1
Authority
FR
France
Prior art keywords
semiconductor optoelectronic
optoelectronic detector
detector
semiconductor
optoelectronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9013946A
Other languages
English (en)
Other versions
FR2670050A1 (fr
Inventor
Alain Friederich
Pierre Leclerc
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR9013946A priority Critical patent/FR2670050B1/fr
Priority to EP91920432A priority patent/EP0510161A1/fr
Priority to PCT/FR1991/000868 priority patent/WO1992009106A1/fr
Priority to US07/849,366 priority patent/US5313058A/en
Publication of FR2670050A1 publication Critical patent/FR2670050A1/fr
Application granted granted Critical
Publication of FR2670050B1 publication Critical patent/FR2670050B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N39/00—Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00
FR9013946A 1990-11-09 1990-11-09 Detecteur optoelectronique a semiconducteurs. Expired - Fee Related FR2670050B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR9013946A FR2670050B1 (fr) 1990-11-09 1990-11-09 Detecteur optoelectronique a semiconducteurs.
EP91920432A EP0510161A1 (fr) 1990-11-09 1991-11-07 Detecteur optoelectronique a semiconducteurs
PCT/FR1991/000868 WO1992009106A1 (fr) 1990-11-09 1991-11-07 Detecteur optoelectronique a semiconducteurs
US07/849,366 US5313058A (en) 1990-11-09 1992-05-05 Semiconductor optoelectronic detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9013946A FR2670050B1 (fr) 1990-11-09 1990-11-09 Detecteur optoelectronique a semiconducteurs.

Publications (2)

Publication Number Publication Date
FR2670050A1 FR2670050A1 (fr) 1992-06-05
FR2670050B1 true FR2670050B1 (fr) 1997-03-14

Family

ID=9402044

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9013946A Expired - Fee Related FR2670050B1 (fr) 1990-11-09 1990-11-09 Detecteur optoelectronique a semiconducteurs.

Country Status (4)

Country Link
US (1) US5313058A (fr)
EP (1) EP0510161A1 (fr)
FR (1) FR2670050B1 (fr)
WO (1) WO1992009106A1 (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6392257B1 (en) * 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
JP2001284631A (ja) * 2000-03-30 2001-10-12 Toshiba Corp 光検出器及び光検出システム
FR2817077B1 (fr) 2000-11-17 2003-03-07 Thomson Csf Capacite variable commandable en tension par utilisation du phenomene de "blocage de coulomb"
US20020158245A1 (en) * 2001-04-26 2002-10-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing binary metal oxide layers
US20030012965A1 (en) * 2001-07-10 2003-01-16 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate comprising an oxygen-doped compound semiconductor layer
US20030012249A1 (en) * 2001-07-13 2003-01-16 Motorola, Inc. Monolithic piezoelectrically-tunable optoelectronic device structures and methods for fabricating same
US7019332B2 (en) * 2001-07-20 2006-03-28 Freescale Semiconductor, Inc. Fabrication of a wavelength locker within a semiconductor structure
US6916717B2 (en) * 2002-05-03 2005-07-12 Motorola, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
US20040079285A1 (en) * 2002-10-24 2004-04-29 Motorola, Inc. Automation of oxide material growth in molecular beam epitaxy systems
US6885065B2 (en) * 2002-11-20 2005-04-26 Freescale Semiconductor, Inc. Ferromagnetic semiconductor structure and method for forming the same
US6963090B2 (en) * 2003-01-09 2005-11-08 Freescale Semiconductor, Inc. Enhancement mode metal-oxide-semiconductor field effect transistor
FR2880131B1 (fr) * 2004-12-23 2007-03-16 Thales Sa Procede de mesure d'un champ magnetique faible et capteur de champ magnetique a sensibilite amelioree
US8531082B2 (en) * 2010-08-27 2013-09-10 Industrial Technology Research Institute Actuator and method for using the same
US11708572B2 (en) 2015-04-29 2023-07-25 Flodesign Sonics, Inc. Acoustic cell separation techniques and processes

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3792321A (en) * 1971-08-26 1974-02-12 F Seifert Piezoelectric semiconductor devices in which sound energy increases the breakdown voltage and power of capabilities
SE447935B (sv) * 1981-04-27 1986-12-22 Optisk Forskning Inst Linslos spektrumanalysator
DE3210086A1 (de) * 1982-03-19 1983-09-22 Siemens AG, 1000 Berlin und 8000 München Lumineszenzdiode, geeignet als drucksensor
US4935935A (en) * 1988-08-31 1990-06-19 Carnegie Mellon University Wavelength tunable electronic and electrooptical semiconductor devices
US5012304A (en) * 1989-03-16 1991-04-30 Bell Communications Research, Inc. Semiconductor devices having strain-induced lateral confinement of charge carriers
US5065205A (en) * 1989-05-12 1991-11-12 The United States Of America As Represented By The United States Department Of Energy Long wavelength, high gain InAsSb strained-layer superlattice photoconductive detectors
US4952792A (en) * 1989-10-13 1990-08-28 At&T Bell Laboratories Devices employing internally strained asymmetric quantum wells

Also Published As

Publication number Publication date
WO1992009106A1 (fr) 1992-05-29
US5313058A (en) 1994-05-17
FR2670050A1 (fr) 1992-06-05
EP0510161A1 (fr) 1992-10-28

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Legal Events

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