FR2656093B1 - Procede et dispositif de mesure de la temperature d'une source de lumiere en materiau semi-conducteur. - Google Patents

Procede et dispositif de mesure de la temperature d'une source de lumiere en materiau semi-conducteur.

Info

Publication number
FR2656093B1
FR2656093B1 FR9016036A FR9016036A FR2656093B1 FR 2656093 B1 FR2656093 B1 FR 2656093B1 FR 9016036 A FR9016036 A FR 9016036A FR 9016036 A FR9016036 A FR 9016036A FR 2656093 B1 FR2656093 B1 FR 2656093B1
Authority
FR
France
Prior art keywords
measuring
temperature
light source
semiconductor material
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9016036A
Other languages
English (en)
Other versions
FR2656093A1 (fr
Inventor
Charles R Winston Jr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Technologies Corp
Original Assignee
United Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Technologies Corp filed Critical United Technologies Corp
Publication of FR2656093A1 publication Critical patent/FR2656093A1/fr
Application granted granted Critical
Publication of FR2656093B1 publication Critical patent/FR2656093B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K11/00—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
    • G01K11/12—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using changes in colour, translucency or reflectance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/27—Control of temperature characterised by the use of electric means with sensing element responsive to radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06804—Stabilisation of laser output parameters by monitoring an external parameter, e.g. temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06808—Stabilisation of laser output parameters by monitoring the electrical laser parameters, e.g. voltage or current

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Automation & Control Theory (AREA)
  • Semiconductor Lasers (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
FR9016036A 1989-12-20 1990-12-20 Procede et dispositif de mesure de la temperature d'une source de lumiere en materiau semi-conducteur. Expired - Fee Related FR2656093B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/453,538 US5024535A (en) 1989-12-20 1989-12-20 Semiconductor light source temperature measurement

Publications (2)

Publication Number Publication Date
FR2656093A1 FR2656093A1 (fr) 1991-06-21
FR2656093B1 true FR2656093B1 (fr) 1994-10-07

Family

ID=23800951

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9016036A Expired - Fee Related FR2656093B1 (fr) 1989-12-20 1990-12-20 Procede et dispositif de mesure de la temperature d'une source de lumiere en materiau semi-conducteur.

Country Status (3)

Country Link
US (1) US5024535A (fr)
JP (1) JP3240475B2 (fr)
FR (1) FR2656093B1 (fr)

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WO1992019014A1 (fr) * 1991-04-15 1992-10-29 Honeywell Inc. Regulation de la temperature d'une source lumineuse a semiconducteur
JPH04373009A (ja) * 1991-06-21 1992-12-25 Hitachi Ltd クロック信号の位相調整方法及び電子装置
US5266792A (en) * 1991-10-28 1993-11-30 Simmonds Precision Products, Inc. Temperature compensated optical detector
WO1993016489A1 (fr) * 1992-02-10 1993-08-19 Sumitomo Electric Industries, Ltd. Procede pour mesurer la temperature d'une jonction de semi-conducteurs
US5230564A (en) * 1992-03-20 1993-07-27 Cray Research, Inc. Temperature monitoring system for air-cooled electric components
US5226733A (en) * 1992-07-23 1993-07-13 United Technologies Corporation Non-linear signal gain compression and sampling
JP2518148B2 (ja) * 1993-03-12 1996-07-24 日本電気株式会社 クロック従属同期方法
US5410515A (en) † 1993-04-29 1995-04-25 Honeywell Inc. Rapid turn-on source for fiber optic gyroscope
DE19502252A1 (de) * 1994-01-26 1995-07-27 Ahlers Horst Dr Ing Habil Temperatursensor
US5461307A (en) * 1994-03-03 1995-10-24 General Electric Company Electro-optical current sensing system and method for sensing and avoiding thermally induced measurement error therein
US5639163A (en) * 1994-11-14 1997-06-17 International Business Machines Corporation On-chip temperature sensing system
EP0766080A1 (fr) * 1995-09-29 1997-04-02 FINMECCANICA S.p.A. AZIENDA ANSALDO Système et procédé pour surveiller une combustion et des polluants à l'aide de diodes laser
US5926495A (en) * 1997-08-04 1999-07-20 Litton Systems, Inc. Laser diode pump wavelength sensing and control apparatus and method
US5961215A (en) * 1997-09-26 1999-10-05 Advanced Micro Devices, Inc. Temperature sensor integral with microprocessor and methods of using same
DE19746204A1 (de) 1997-10-18 1999-04-29 Deutsche Telekom Ag Halbleiterlaserchip
US5955793A (en) * 1998-02-11 1999-09-21 Therm-O-Disc, Incorporated High sensitivity diode temperature sensor with adjustable current source
US6342997B1 (en) 1998-02-11 2002-01-29 Therm-O-Disc, Incorporated High sensitivity diode temperature sensor with adjustable current source
US6359918B1 (en) 1998-06-30 2002-03-19 Honeywell International Inc. Light source control device
TW530198B (en) * 1999-04-13 2003-05-01 Via Tech Inc Method for detecting temperature in notebook computer and device thereof
DE10011179B4 (de) * 2000-03-08 2005-06-30 Infineon Technologies Ag Verfahren zur Ermittlung der Temperatur eines Halbleiter-Chips und Halbleiter-Chip mit Temperaturmessanordnung
JP2002048651A (ja) * 2000-08-04 2002-02-15 Nippon Precision Circuits Inc 半導体温度検出方法およびその回路
GB2369437A (en) * 2000-11-28 2002-05-29 Graviner Ltd Kidde An LED based temperature sensor
US6679628B2 (en) * 2001-08-14 2004-01-20 Schneider Automation Inc. Solid state temperature measuring device and method
US7269191B2 (en) * 2002-02-12 2007-09-11 Finisar Corporation Control circuit for optoelectronic module with integrated temperature control
US20040019459A1 (en) * 2002-07-29 2004-01-29 Paul Dietz Auto-characterization of optical devices
US7091462B2 (en) * 2002-08-26 2006-08-15 Jds Uniphase Corporation Transmitter with laser monitoring and wavelength stabilization circuit
US7058099B2 (en) 2002-11-08 2006-06-06 Finisar Corporation Age compensation in optoelectronic modules with integrated temperature control
US7035300B2 (en) 2002-11-05 2006-04-25 Finisar Corporation Calibration of a multi-channel optoelectronic module with integrated temperature control
US7236507B2 (en) 2002-11-08 2007-06-26 Finisar Corporation Time-based adjustment of temperature control of laser to stabilize wavelengths
US7830936B2 (en) * 2003-01-10 2010-11-09 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Calibration of laser systems
JP3984214B2 (ja) * 2003-10-21 2007-10-03 ローム株式会社 発光制御装置
US7054344B1 (en) 2003-11-17 2006-05-30 Finisar Corporation Method and system for equalizing transmission line loss of a laser drive signal
US7544545B2 (en) * 2005-12-28 2009-06-09 Vishay-Siliconix Trench polysilicon diode
US20070210818A1 (en) * 2006-03-09 2007-09-13 International Business Machines Corporation Temperature monitoring and control apparatus and method
US7642770B2 (en) * 2007-03-16 2010-01-05 Mediatek Inc. Light-driving system capable of providing signal-measured calibration and a method for performing the same
TWI447892B (zh) * 2009-04-20 2014-08-01 Ind Tech Res Inst 發光裝置與其製造方法
US8213018B2 (en) 2010-11-10 2012-07-03 Honeywell International Inc. Constant optical power sensor using a light source current servo combined with digital demodulation intensity suppression for radiation and vibration insensitivity in a fiber optic gyroscope
CN202329848U (zh) * 2011-11-23 2012-07-11 艾默生电气公司 测温装置
US9293447B2 (en) * 2012-01-19 2016-03-22 Epistar Corporation LED thermal protection structures
CN105784199B (zh) * 2016-03-17 2019-06-14 青岛海信宽带多媒体技术有限公司 一种光模块
CN105652918A (zh) * 2016-03-31 2016-06-08 南京铁道职业技术学院 一种激光器温度控制电路
US12022583B2 (en) * 2020-07-10 2024-06-25 Asiatelco Technologies, Inc. Portable devices, systems and methods with automated heat control assembly

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FR2241778B1 (fr) * 1973-07-13 1977-09-09 Thomson Csf
US3973852A (en) * 1974-08-30 1976-08-10 The Dow Chemical Company Method and apparatus for measuring particulate concentration in the atmosphere
US3996451A (en) * 1975-10-28 1976-12-07 Control Data Corporation Semiconductor diode temperature sensing device
US4123938A (en) * 1976-05-19 1978-11-07 University Patents, Inc. Device for measuring thermal parameters
DE2737345C2 (de) * 1976-08-20 1991-07-25 Canon K.K., Tokio/Tokyo Halbleiterlaser-Vorrichtung mit einem Peltier-Element
US4215577A (en) * 1978-08-28 1980-08-05 Purdue Research Foundation Utilization of diodes as wide range responsive thermometers
US4243898A (en) * 1978-11-16 1981-01-06 Motorola, Inc. Semiconductor temperature sensor
JPS57188894A (en) * 1981-05-18 1982-11-19 Hitachi Ltd Semiconductor laser device
US4484331A (en) * 1981-07-20 1984-11-20 Rca Corporation Regulator for bias current of semiconductor laser diode
US4536851A (en) * 1982-10-22 1985-08-20 Damon Germanton Electronic thermometer and associated apparatus
JPS5994891A (ja) * 1982-11-24 1984-05-31 Hitachi Ltd 半導体レ−ザ装置
GB8329622D0 (en) * 1983-11-05 1983-12-07 Systematic Micro Ltd Temperature monitoring system
US4636092A (en) * 1984-06-19 1987-01-13 Hegyi Dennis J Diode thermometer
EP0238484A1 (fr) * 1985-09-24 1987-09-30 Bell Communications Research, Inc. Stabilisation de la temperature de lasers a injection
US4808009A (en) * 1986-06-05 1989-02-28 Rosemount, Inc. Integrated semiconductor resistance temperature sensor and resistive heater
US4768170A (en) * 1986-06-06 1988-08-30 Intel Corporation MOS temperature sensing circuit

Also Published As

Publication number Publication date
FR2656093A1 (fr) 1991-06-21
JPH04112590A (ja) 1992-04-14
JP3240475B2 (ja) 2001-12-17
US5024535A (en) 1991-06-18

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TP Transmission of property
ST Notification of lapse

Effective date: 20100831