FR2653229B1 - CAPACITIVE ELECTROMAGNETIC WAVE DETECTOR. - Google Patents

CAPACITIVE ELECTROMAGNETIC WAVE DETECTOR.

Info

Publication number
FR2653229B1
FR2653229B1 FR8913326A FR8913326A FR2653229B1 FR 2653229 B1 FR2653229 B1 FR 2653229B1 FR 8913326 A FR8913326 A FR 8913326A FR 8913326 A FR8913326 A FR 8913326A FR 2653229 B1 FR2653229 B1 FR 2653229B1
Authority
FR
France
Prior art keywords
electromagnetic wave
wave detector
capacitive electromagnetic
capacitive
detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR8913326A
Other languages
French (fr)
Other versions
FR2653229A1 (en
Inventor
Rosencher Emmanuel
Vinter Borge
Bois Paul
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR8913326A priority Critical patent/FR2653229B1/en
Priority to DE69014815T priority patent/DE69014815T2/en
Priority to EP90402736A priority patent/EP0422990B1/en
Priority to US07/593,992 priority patent/US5086327A/en
Publication of FR2653229A1 publication Critical patent/FR2653229A1/en
Application granted granted Critical
Publication of FR2653229B1 publication Critical patent/FR2653229B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Light Receiving Elements (AREA)
FR8913326A 1989-10-12 1989-10-12 CAPACITIVE ELECTROMAGNETIC WAVE DETECTOR. Expired - Lifetime FR2653229B1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR8913326A FR2653229B1 (en) 1989-10-12 1989-10-12 CAPACITIVE ELECTROMAGNETIC WAVE DETECTOR.
DE69014815T DE69014815T2 (en) 1989-10-12 1990-10-03 Capacitive detector of electromagnetic waves.
EP90402736A EP0422990B1 (en) 1989-10-12 1990-10-03 Capacitive detector of electromagnetic waves
US07/593,992 US5086327A (en) 1989-10-12 1990-10-09 Capacitive detector of electromagnetic waves

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8913326A FR2653229B1 (en) 1989-10-12 1989-10-12 CAPACITIVE ELECTROMAGNETIC WAVE DETECTOR.

Publications (2)

Publication Number Publication Date
FR2653229A1 FR2653229A1 (en) 1991-04-19
FR2653229B1 true FR2653229B1 (en) 1992-01-17

Family

ID=9386316

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8913326A Expired - Lifetime FR2653229B1 (en) 1989-10-12 1989-10-12 CAPACITIVE ELECTROMAGNETIC WAVE DETECTOR.

Country Status (4)

Country Link
US (1) US5086327A (en)
EP (1) EP0422990B1 (en)
DE (1) DE69014815T2 (en)
FR (1) FR2653229B1 (en)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5206526A (en) * 1991-05-13 1993-04-27 At&T Bell Laboratories Staircase bandgap photodetector using recombination
FR2678774B1 (en) * 1991-07-05 1998-07-10 Thomson Csf ELECTROMAGNETIC WAVE DETECTOR.
FR2682477B1 (en) * 1991-10-11 1994-04-15 Thomson Csf SPECTROMETER.
FR2684807B1 (en) * 1991-12-10 2004-06-11 Thomson Csf QUANTUM WELL TRANSISTOR WITH RESONANT TUNNEL EFFECT.
FR2718571B1 (en) * 1994-04-08 1996-05-15 Thomson Csf Semiconductor hybrid component.
FR2726903B1 (en) * 1994-11-10 1996-12-06 Thomson Csf INTEGRATED ECARTOMETER
FR2736168B1 (en) * 1995-06-30 1997-07-25 Thomson Csf FREQUENCY CONVERTER COMPRISING A HETEROSTRUCTURE SEMICONDUCTOR GUIDE
FR2756666B1 (en) * 1996-12-04 1999-02-19 Thomson Csf ELECTROMAGNETIC WAVE DETECTOR
FR2756667B1 (en) * 1996-12-04 1999-02-19 Thomson Csf BISPECTRAL ELECTROMAGNETIC WAVE DETECTOR
FR2757684B1 (en) * 1996-12-20 1999-03-26 Thomson Csf INFRARED DETECTOR WITH QUANTUM STRUCTURE, UNCOOLED
FR2761537B1 (en) 1997-04-01 1999-06-11 Thomson Csf LASER COMPRISING A STACK OF EPITAXIAL LASER DIODES INCLUDED BETWEEN TWO BRAGG MIRRORS
FR2772919B1 (en) 1997-12-23 2000-03-17 Thomson Csf INFRARED IMAGER WITH QUANTUM STRUCTURE OPERATING AT AMBIENT TEMPERATURE
FR2780203B1 (en) * 1998-06-23 2003-07-04 Thomson Csf QUANTUM WELL DETECTOR WITH PHOTOEXCITED ELECTRON STORAGE LAYER
FR2808926B1 (en) * 2000-05-12 2003-08-01 Thomson Csf POLARIMETRIC OPTICAL DETECTOR
FR2808925B1 (en) 2000-05-12 2003-08-08 Thomson Csf BI-SPECTRAL OPTICAL DETECTOR
FR2811808B1 (en) 2000-07-11 2002-10-25 Thomson Csf SELF-COMPENSATION DEVICE FOR SUBTRACTIVE DETECTORS
FR2855654B1 (en) * 2003-05-27 2006-03-03 Thales Sa ELECTROMAGNETIC WAVE DETECTOR WITH OPTICAL COUPLING SURFACE COMPRISING LAMELLAR PATTERNS
FR2855653B1 (en) * 2003-05-27 2005-10-21 Thales Sa OPTICAL COUPLING AMORPHOUS STRUCTURE FOR ELECTROMAGNETIC WAVE SENSOR AND ASSOCIATED DETECTOR
FR2863774B1 (en) * 2003-12-16 2006-03-03 Thales Sa PHOTODETECTOR WITH CLOSELY FIELD CONCENTRATION
FR2937791B1 (en) * 2008-10-24 2010-11-26 Thales Sa POLARIMETRIC IMAGING DEVICE OPTIMIZED IN RELATION TO THE POLARIZATION CONTRAST
FR2937792B1 (en) * 2008-10-24 2011-03-18 Thales Sa MULTISPECTRAL IMAGING DEVICE BASED ON QUANTUM MULTI-WELLS

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4745452A (en) * 1984-09-24 1988-05-17 Massachusetts Institute Of Technology Tunneling transfer devices
US4905056A (en) * 1988-09-30 1990-02-27 Berndt Dale F Superlattice precision voltage reference
US4987458A (en) * 1989-06-30 1991-01-22 Georgia Tech Research Corporation Semiconductor biased superlattice tunable interference filter/emitter

Also Published As

Publication number Publication date
EP0422990A1 (en) 1991-04-17
FR2653229A1 (en) 1991-04-19
DE69014815T2 (en) 1995-05-04
EP0422990B1 (en) 1994-12-07
DE69014815D1 (en) 1995-01-19
US5086327A (en) 1992-02-04

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Legal Events

Date Code Title Description
CD Change of name or company name
ST Notification of lapse