FR2627013A1 - Semiconductor photovoltaic generator made on a substrate of different mesh parameter - Google Patents
Semiconductor photovoltaic generator made on a substrate of different mesh parameter Download PDFInfo
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- FR2627013A1 FR2627013A1 FR8801347A FR8801347A FR2627013A1 FR 2627013 A1 FR2627013 A1 FR 2627013A1 FR 8801347 A FR8801347 A FR 8801347A FR 8801347 A FR8801347 A FR 8801347A FR 2627013 A1 FR2627013 A1 FR 2627013A1
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- phosphide
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- 239000000758 substrate Substances 0.000 title claims abstract description 27
- 239000004065 semiconductor Substances 0.000 title claims description 8
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 19
- 239000010703 silicon Substances 0.000 claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 230000006978 adaptation Effects 0.000 claims description 6
- 239000011701 zinc Substances 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 229910017401 Au—Ge Inorganic materials 0.000 claims description 3
- 229910005540 GaP Inorganic materials 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910001020 Au alloy Inorganic materials 0.000 claims 4
- 229910000927 Ge alloy Inorganic materials 0.000 claims 2
- 229910001297 Zn alloy Inorganic materials 0.000 claims 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 15
- 230000005855 radiation Effects 0.000 description 7
- 230000002285 radioactive effect Effects 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000000407 epitaxy Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000001741 metal-organic molecular beam epitaxy Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Abstract
Description
GENERATEUR PHOTOVOLTAIQUE A
SEMICONDUCTEURS
REALISE SUR UN SUBSTRAT DE PARAMETRE
DE MAILLE DIFFERENT
L'invention concerne un générateur photovoltaïque à semiconducteurs réalisé sur un substrat de paramètre de maille différent de celui des matériaux semiconducteurs du générateur photovoltaÏque .PHOTOVOLTAIC GENERATOR A
SEMICONDUCTORS
REALIZED ON A SUBSTRATE OF PARAMETER
DIFFERENT MESH
The invention relates to a semiconductor photovoltaic generator produced on a substrate with a mesh parameter different from that of the semiconductor materials of the photovoltaic generator.
Les générateurs photovoltaïques trouvent des applica tions préférentielles dans l'lndustrie spatiale. Cependant dans l'envfronnement spatial ces générateurs sont soumis à des épreuves telles que des radiations radioactives qui peuvent perturber leur fonctionnement. Photovoltaic generators find preferred applications in the space industry. However, in the space environment, these generators are subjected to tests such as radioactive radiation which can disrupt their operation.
Les générateurs photovoltaïques à base de silicium semblent être parmi les moins coûteux mais ils ne possèdent un rendement quantique que de 20% et on observe dans ces générateurs une dégradation rapide des cellules dans l'espace à cause de la sensibilité du silicium aux radiations radioactives. The silicon-based photovoltaic generators seem to be among the least expensive but they only have a quantum efficiency of 20% and we observe in these generators a rapid degradation of the cells in space because of the sensitivity of silicon to radioactive radiation.
Les générateurs photovoltaïques à base d'arséniure de gallium (Ga As) sont plus utilisés dans l'industrie spatiale. Gallium arsenide (Ga As) photovoltaic generators are more widely used in the space industry.
Ils présentent généralement un rendement atteignant 25% et sont moins sensibles aux rayonnements radioactifs que les générateurs à base de silicium.They generally have an efficiency of up to 25% and are less sensitive to radioactive radiation than silicon-based generators.
Cependant les problèmes du rendement de ces générateurs et de leur sensibilité aux radiations radioactives restent cruciaux même dans les générateurs à base de Ga As. However, the problems of the efficiency of these generators and of their sensitivity to radioactive radiation remain crucial even in generators based on Ga As.
C'est pourquoi l'invention concerne un générateur photovoltaïque présentant les avantages suivants
- un rendement meilleur comparé aux générateurs exis tante
- une meilleure insensibüité aux radiations radloacti
- une possibilité de fabrication en grande surface
- une moins grande fragilité
- une bonne conductibilité thermique
- un coût réduit.This is why the invention relates to a photovoltaic generator having the following advantages
- better efficiency compared to existing generators
- better insensitivity to radloacti radiations
- a possibility of manufacturing in supermarkets
- less fragility
- good thermal conductivity
- a reduced cost.
L'invention concerne donc un générateur photovoltaïque à semiconducteurs comportant, sur un substrat, une couche de confinement, laquelle est recouverte par une couche active, elle-même recouverte par une couche de contact, la couche de contact possédant en outre au moins un premier contact métallique et le substrat possédant également au moins un deuxième contact métallique, caractérisé en ce que
- le substrat est en silicium dopé d'un premier type (n+ ou p
- la couche de confinement est en phosphure d'indium (InP) dopé du même type que le substrat (n+ ou
- la couche active est en phosphure d'indium non dopé,
- la couche de contact est en phosphure d'indium dopé d'un deuxième type (p + ou n+) différent du premier type
- le générateur photovoltaïque possède en outre entre le substrat et la couche de confinement au moins une couche d'adaptation.The invention therefore relates to a semiconductor photovoltaic generator comprising, on a substrate, a confinement layer, which is covered by an active layer, itself covered by a contact layer, the contact layer also having at least a first metal contact and the substrate also having at least one second metal contact, characterized in that
- the substrate is made of doped silicon of a first type (n + or p
- the confinement layer is indium phosphide (InP) doped of the same type as the substrate (n + or
- the active layer is made of undoped indium phosphide,
- the contact layer is of doped indium phosphide of a second type (p + or n +) different from the first type
the photovoltaic generator also has between the substrate and the confinement layer at least one adaptation layer.
Les différents objets et caractéristiques de l'invention apparaîtront plus clairement dans la description qui va suivre faite à titre d'exemple non limitatif en se reportant aux figures annexées qui représentent
- la figure 1, un exemple de réalisation du générateur photovoltaïque selon l'invention;
- la figure 2, une variante de réalisation du générateur photovoltaïque selon l'invention.The various objects and characteristics of the invention will emerge more clearly in the description which follows, given by way of nonlimiting example, with reference to the appended figures which represent
FIG. 1, an exemplary embodiment of the photovoltaic generator according to the invention;
- Figure 2, an alternative embodiment of the photovoltaic generator according to the invention.
En se reportant à la figure 1, on va décrire un exemple de réalisation du générateur photovoltaïque selon l'invention. Referring to FIG. 1, an exemplary embodiment of the photovoltaic generator according to the invention will be described.
Le- générateur comporte, sur un substrat 1 en silicium monocristallin dopé du type n+, une couche de confinement 2 en phosphure d'indium (@@@) dopé n+, une couche active @ en phosphure d'indium non dopée ou faiblement dopée n et une
+ couche de contact 4 en phosphure d'indium dopé p
En effet, selon l'invention on prévoit d'utiliser le phosphure d'indium pour la couche de confinement 2, la couche active 3 et la couche de contact 4. On obtient ainsi un générateur photovoltaïque ayant un bon rendement (dépassant 30%) et présentant une bonne insensibilité aux rayonnements radioactifs.The generator comprises, on a substrate 1 of n + type doped monocrystalline silicon, a confinement layer 2 of n + doped indium phosphide (@@@), an active layer @ of undoped or lightly n doped indium phosphide and an
+ p-doped indium phosphide contact layer 4
Indeed, according to the invention, provision is made to use indium phosphide for the confinement layer 2, the active layer 3 and the contact layer 4. A photovoltaic generator is thus obtained having a good efficiency (exceeding 30%). and exhibiting good insensitivity to radioactive radiation.
Le fait d'utiliser un substrat en silicium permet d'obtenir un générateur peu coûteux et d'avoir une bonne dissipation thermique.The fact of using a silicon substrate makes it possible to obtain an inexpensive generator and to have good heat dissipation.
Cependant la croissance de la couche de confinement 2 sur le substrat I donne lieu à des dislocations en raison des différences de mailles entre le silicium et le phosphure dtin- dium. Pour permettre la réalisation d'un tel dispositif, l'lnven- tion prévoit en outre, entre la couche de confinement 2 et le substrat 1, une couche d'adaptation ou réseau d'adaptation 7 appelé également super-réseau. However, the growth of the confinement layer 2 on the substrate I gives rise to dislocations due to the mesh differences between the silicon and the indium phosphide. To enable such a device to be produced, the invention further provides, between the confinement layer 2 and the substrate 1, an adaptation layer or adaptation network 7 also called a super-network.
Ce réseau d'adaptation comporte une alternance de couches de phosphure d'indium 70.1, 70.2, . 70.n et de couches d'un matériau semiconducteur 71.1, 71.2, .. 71 n dont le paramètre de maille est sensiblement égal à celui du silicium. This matching network comprises an alternation of layers of indium phosphide 70.1, 70.2,. 70.n and layers of a semiconductor material 71.1, 71.2, .. 71 n, the lattice parameter of which is substantially equal to that of silicon.
A titre d'exemple, le matériau utilisé pour les couches 71.1, 71.2, . 71.n pourra être au choix
- du phosphure d'arsénic, de gallium et d'indium, et on aura alors un super-réseau InP/Ga In As P;
- du phosphure de gallium et on aura alors un super-réseau InP/Ga P
- du phosphure d'indium et de gallium et on aura alors un super-réseau InP/Ga InP.For example, the material used for the layers 71.1, 71.2,. 71.n can be as desired
- arsenic, gallium and indium phosphide, and we will then have an InP / Ga In As P super-lattice;
- gallium phosphide and we will then have an InP / Ga P super-lattice
- indium and gallium phosphide and we will then have an InP / Ga InP super-lattice.
Pour réaliser une bonne adaptation une dizaine de couches de chaque type (70.1 à 70.n d'une part et 71.1 à 71.n d'autre part) convient avec des couches d'épaisseurs sensiblement égales conduisant à une épaisseur du super-réseau 7 pouvant atteindre environ 1000 Angstroems par exemple. To achieve a good adaptation, ten layers of each type (70.1 to 70.n on the one hand and 71.1 to 71.n on the other hand) are suitable with layers of substantially equal thickness leading to a thickness of the super-network 7 can reach around 1000 Angstroems for example.
A titre d'exemple de réalisation on peut également indiquer que
- la couche de confinement 2 peut avoir une épaisseur de 1 à 5 micromètres et être dopée à 1018 par cm3
- la couche active 3 peut avoir une épaisseur de 1 à 10 micromètres,
- la couche active 3 peut avoir une épaisseur de 1 à 10 micromètres,
- la couche de contact å une épaisseur de 1000
Angstroems et est dopée å 1018 par cm3. As an example of an embodiment, it can also be indicated that
- the confinement layer 2 can have a thickness of 1 to 5 micrometers and be doped at 1018 per cm3
- the active layer 3 can have a thickness of 1 to 10 micrometers,
- the active layer 3 can have a thickness of 1 to 10 micrometers,
- the contact layer has a thickness of 1000
Angstroems and is spiked to 1018 per cm3.
Un tel générateur photovoltaïque peut être réalisé par épitaxie sur une plaquette de substrat silicium par un procédé d'épitaxie tel que par
- MOCVD = Epitaxie en phase vapeur d'organométalliques;
- MOMBE = épitaxie par jet moléculaire d'organométalliques.Such a photovoltaic generator can be produced by epitaxy on a silicon substrate wafer by an epitaxy method such as by
- MOCVD = Vapor phase epitaxy of organometallics;
- MOMBE = epitaxy by molecular beam of organometallics.
On peut ainsi réaliser des générateurs sur des plaquettes de substrat silicium pouvant atteindre 8 pouces de diamètre et obtenir des cellules de cette dimension. It is thus possible to produce generators on silicon substrate wafers that can reach 8 inches in diameter and obtain cells of this dimension.
La surface supérieure 40 de la couche de contact 4 possède un élément de contact électrique 5. Selon un exemple de réallsation préféré, cet élément 5 est disposé à la périphérie de la surface 40 et entoure cette surface 40. Par exemple dans le cas d'une surface 40, de forme circulaire dans le cas où le dispositif est réalisé sur une plaquette 1 circulaire, le contact 5 a la forme d'une couronne. La lumière permettant le fonctionnement du générateur photovoltaïque accède ainsi à la couche active selon le chemin indiqué par les flèches F. The upper surface 40 of the contact layer 4 has an electrical contact element 5. According to a preferred embodiment, this element 5 is disposed at the periphery of the surface 40 and surrounds this surface 40. For example in the case of a surface 40, of circular shape in the case where the device is produced on a circular plate 1, the contact 5 has the shape of a ring. The light allowing the operation of the photovoltaic generator thus accesses the active layer according to the path indicated by the arrows F.
La surface inférieur 10 du substrat 1 possède également un élément de contact électrique 6. Pour des raisons d'efficacité, cet élément 6 recouvre de préférence toute la surface 10. The lower surface 10 of the substrate 1 also has an electrical contact element 6. For reasons of efficiency, this element 6 preferably covers the entire surface 10.
Les éléments de contact 5 et 6 permettent les con nexions électriques vers des organes utilisateurs non représen tés . Contact elements 5 and 6 allow electrical connections to user members not shown.
Selon l'exemple de réalisation de la figure 1, l'élément de contact 5 est en matériau à base d'or et de zinc (Au-Zn) et l'élément de contact 6 est en matériau à base d'or et de germanium (Au-Ge). According to the embodiment of FIG. 1, the contact element 5 is made of a material based on gold and zinc (Au-Zn) and the contact element 6 is made of a material based on gold and germanium (Au-Ge).
Selon une variante de réalisation représentée en fi~ gure 2, le substrat 1 en silicium peut être dopé de type p
La couche de confinement 2 est alors également dopé p, tandis que la couche de contact 4 est dopé n
Le contact 5 est alors réalisé h base d'or et de germa nium et le contact 6 est réalisé à base d'or et de zinc.According to an alternative embodiment shown in fi ~ Figure 2, the silicon substrate 1 can be p-type doped
The confinement layer 2 is then also p-doped, while the contact layer 4 is n-doped
Contact 5 is then made on a basis of gold and germa nium and contact 6 is made on a basis of gold and zinc.
On obtient ainsi en raison de l'utilisation d'un substrat silicium, un dispositif qui présente l'avantages d'être
- moins fragile;
- moins épais, la densité du silicium étant plus faible ce qui permet d'amincir la structure et de réduire le poids
- meilleur dissipateur thermique
- plus économique
- réalisable en grande surface.There is thus obtained, due to the use of a silicon substrate, a device which has the advantages of being
- less fragile;
- less thick, the density of the silicon being lower, which makes it possible to thin the structure and reduce the weight
- better heat sink
- more economical
- achievable in supermarkets.
La réalisation avec du phosphure d'indium apporte les avantages
- d'un meilleur rendement
- d'une meilleure insensibilité aux rayonnements radioactifs.The realization with indium phosphide brings the advantages
- better performance
- better insensitivity to radioactive radiation.
Il est bien évident que la description qui précède n'a été faite qu'a titre d'exemple non limitatif. Les exemples numériques, notamment, et les types de matériaux utilisables n'ont été indiquées que pour illustrer la description D'autres variantes peuvent être envisagées sans sortir du cadre de l'invention. It is obvious that the foregoing description has only been given by way of non-limiting example. The numerical examples, in particular, and the types of materials which can be used have been indicated only to illustrate the description. Other variants can be envisaged without departing from the scope of the invention.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8801347A FR2627013A1 (en) | 1988-02-05 | 1988-02-05 | Semiconductor photovoltaic generator made on a substrate of different mesh parameter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8801347A FR2627013A1 (en) | 1988-02-05 | 1988-02-05 | Semiconductor photovoltaic generator made on a substrate of different mesh parameter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR2627013A1 true FR2627013A1 (en) | 1989-08-11 |
Family
ID=9362969
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8801347A Pending FR2627013A1 (en) | 1988-02-05 | 1988-02-05 | Semiconductor photovoltaic generator made on a substrate of different mesh parameter |
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| Country | Link |
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| FR (1) | FR2627013A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2678774A1 (en) * | 1991-07-05 | 1993-01-08 | Thomson Csf | ELECTROMAGNETIC WAVE DETECTOR. |
| US6010937A (en) * | 1995-09-05 | 2000-01-04 | Spire Corporation | Reduction of dislocations in a heteroepitaxial semiconductor structure |
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|---|---|---|---|---|
| JPS59163878A (en) * | 1983-03-09 | 1984-09-14 | Fujitsu Ltd | Semiconductor photo detector |
| FR2549642A1 (en) * | 1983-07-18 | 1985-01-25 | Nippon Telegraph & Telephone | SOLAR CELL |
| JPS60218881A (en) * | 1984-04-13 | 1985-11-01 | Nippon Telegr & Teleph Corp <Ntt> | Gaas solar battery |
-
1988
- 1988-02-05 FR FR8801347A patent/FR2627013A1/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59163878A (en) * | 1983-03-09 | 1984-09-14 | Fujitsu Ltd | Semiconductor photo detector |
| FR2549642A1 (en) * | 1983-07-18 | 1985-01-25 | Nippon Telegraph & Telephone | SOLAR CELL |
| JPS60218881A (en) * | 1984-04-13 | 1985-11-01 | Nippon Telegr & Teleph Corp <Ntt> | Gaas solar battery |
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| Title |
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| PATENT ABSTRACTS OF JAPAN, vol. 10, no. 69 (E-389)[2126], 18 mars 1986; & JP-A-60 218 881 (NIPPON DENSHIN DENWA KOSHA) 01-11-1985 * |
| PATENT ABSTRACTS OF JAPAN, vol. 9, no. 15 (E-291)[1738], 22 janvier 1985; & JP-A-59 163 878 (FUJITSU K.K.) 14-09-1984 * |
| SOLAR CELLS, vol. 19, no. 1, novembre 1986, pages 85-96, Elsevier Sequoia, Lausanne, CH; M.YAMAGUCHI et al.: "A new approach for thin film InP solar cells" * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2678774A1 (en) * | 1991-07-05 | 1993-01-08 | Thomson Csf | ELECTROMAGNETIC WAVE DETECTOR. |
| EP0526265A1 (en) * | 1991-07-05 | 1993-02-03 | Thomson-Csf | Electromagnetic wave detector |
| US5326984A (en) * | 1991-07-05 | 1994-07-05 | Thomson-Csf | Electromagnetic wave detector |
| US6010937A (en) * | 1995-09-05 | 2000-01-04 | Spire Corporation | Reduction of dislocations in a heteroepitaxial semiconductor structure |
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