FR2626976B1 - Procede et dispositif pour l'analyse quantitative et differentielle en profondeur d'echantillons solides en mettant en oeuvre deux faisceaux d'ions - Google Patents
Procede et dispositif pour l'analyse quantitative et differentielle en profondeur d'echantillons solides en mettant en oeuvre deux faisceaux d'ionsInfo
- Publication number
- FR2626976B1 FR2626976B1 FR888817317A FR8817317A FR2626976B1 FR 2626976 B1 FR2626976 B1 FR 2626976B1 FR 888817317 A FR888817317 A FR 888817317A FR 8817317 A FR8817317 A FR 8817317A FR 2626976 B1 FR2626976 B1 FR 2626976B1
- Authority
- FR
- France
- Prior art keywords
- depth
- quantitative analysis
- ion beams
- solid samples
- samples
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
- G01N23/203—Measuring back scattering
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE3803424A DE3803424C2 (de) | 1988-02-05 | 1988-02-05 | Verfahren zur quantitativen, tiefendifferentiellen Analyse fester Proben |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2626976A1 FR2626976A1 (fr) | 1989-08-11 |
FR2626976B1 true FR2626976B1 (fr) | 1993-04-30 |
Family
ID=6346682
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR888817317A Expired - Fee Related FR2626976B1 (fr) | 1988-02-05 | 1988-12-28 | Procede et dispositif pour l'analyse quantitative et differentielle en profondeur d'echantillons solides en mettant en oeuvre deux faisceaux d'ions |
Country Status (6)
Country | Link |
---|---|
US (1) | US4982090A (fr) |
JP (1) | JP2740231B2 (fr) |
DE (1) | DE3803424C2 (fr) |
FR (1) | FR2626976B1 (fr) |
GB (1) | GB2215909B (fr) |
IT (1) | IT1230178B (fr) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4028044A1 (de) * | 1990-09-05 | 1992-03-12 | Geesthacht Gkss Forschung | Verfahren und vorrichtung zur analyse und bestimmung der konzentration von elementen in vorbestimmten tiefen von objekten |
FR2681472B1 (fr) | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
FR2748851B1 (fr) | 1996-05-15 | 1998-08-07 | Commissariat Energie Atomique | Procede de realisation d'une couche mince de materiau semiconducteur |
JP2001525991A (ja) * | 1997-05-12 | 2001-12-11 | シリコン・ジェネシス・コーポレーション | 制御された劈開プロセス |
US5985742A (en) | 1997-05-12 | 1999-11-16 | Silicon Genesis Corporation | Controlled cleavage process and device for patterned films |
US6033974A (en) * | 1997-05-12 | 2000-03-07 | Silicon Genesis Corporation | Method for controlled cleaving process |
US6291313B1 (en) | 1997-05-12 | 2001-09-18 | Silicon Genesis Corporation | Method and device for controlled cleaving process |
US20070122997A1 (en) * | 1998-02-19 | 2007-05-31 | Silicon Genesis Corporation | Controlled process and resulting device |
US6548382B1 (en) * | 1997-07-18 | 2003-04-15 | Silicon Genesis Corporation | Gettering technique for wafers made using a controlled cleaving process |
FR2773261B1 (fr) | 1997-12-30 | 2000-01-28 | Commissariat Energie Atomique | Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions |
US6291326B1 (en) | 1998-06-23 | 2001-09-18 | Silicon Genesis Corporation | Pre-semiconductor process implant and post-process film separation |
US6255662B1 (en) * | 1998-10-27 | 2001-07-03 | Axcelis Technologies, Inc. | Rutherford backscattering detection for use in Ion implantation |
US6500732B1 (en) | 1999-08-10 | 2002-12-31 | Silicon Genesis Corporation | Cleaving process to fabricate multilayered substrates using low implantation doses |
EP1212787B1 (fr) * | 1999-08-10 | 2014-10-08 | Silicon Genesis Corporation | Procede de clivage permettant de fabriquer des substrats multicouche a l'aide de faibles doses d'implantation |
US6263941B1 (en) | 1999-08-10 | 2001-07-24 | Silicon Genesis Corporation | Nozzle for cleaving substrates |
US6221740B1 (en) | 1999-08-10 | 2001-04-24 | Silicon Genesis Corporation | Substrate cleaving tool and method |
US6373070B1 (en) | 1999-10-12 | 2002-04-16 | Fei Company | Method apparatus for a coaxial optical microscope with focused ion beam |
FR2806527B1 (fr) * | 2000-03-20 | 2002-10-25 | Schlumberger Technologies Inc | Colonne a focalisation simultanee d'un faisceau de particules et d'un faisceau optique |
US6465776B1 (en) | 2000-06-02 | 2002-10-15 | Board Of Regents, The University Of Texas System | Mass spectrometer apparatus for analyzing multiple fluid samples concurrently |
FR2823599B1 (fr) | 2001-04-13 | 2004-12-17 | Commissariat Energie Atomique | Substrat demomtable a tenue mecanique controlee et procede de realisation |
US8187377B2 (en) * | 2002-10-04 | 2012-05-29 | Silicon Genesis Corporation | Non-contact etch annealing of strained layers |
FR2848336B1 (fr) * | 2002-12-09 | 2005-10-28 | Commissariat Energie Atomique | Procede de realisation d'une structure contrainte destinee a etre dissociee |
FR2856844B1 (fr) * | 2003-06-24 | 2006-02-17 | Commissariat Energie Atomique | Circuit integre sur puce de hautes performances |
FR2857953B1 (fr) | 2003-07-21 | 2006-01-13 | Commissariat Energie Atomique | Structure empilee, et procede pour la fabriquer |
FR2861497B1 (fr) * | 2003-10-28 | 2006-02-10 | Soitec Silicon On Insulator | Procede de transfert catastrophique d'une couche fine apres co-implantation |
US7354815B2 (en) * | 2003-11-18 | 2008-04-08 | Silicon Genesis Corporation | Method for fabricating semiconductor devices using strained silicon bearing material |
FR2889887B1 (fr) * | 2005-08-16 | 2007-11-09 | Commissariat Energie Atomique | Procede de report d'une couche mince sur un support |
FR2891281B1 (fr) | 2005-09-28 | 2007-12-28 | Commissariat Energie Atomique | Procede de fabrication d'un element en couches minces. |
JP5127148B2 (ja) * | 2006-03-16 | 2013-01-23 | 株式会社日立ハイテクノロジーズ | イオンビーム加工装置 |
US8293619B2 (en) | 2008-08-28 | 2012-10-23 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled propagation |
US9362439B2 (en) | 2008-05-07 | 2016-06-07 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled shear region |
US7811900B2 (en) * | 2006-09-08 | 2010-10-12 | Silicon Genesis Corporation | Method and structure for fabricating solar cells using a thick layer transfer process |
US8993410B2 (en) | 2006-09-08 | 2015-03-31 | Silicon Genesis Corporation | Substrate cleaving under controlled stress conditions |
FR2910179B1 (fr) * | 2006-12-19 | 2009-03-13 | Commissariat Energie Atomique | PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART |
FR2922359B1 (fr) * | 2007-10-12 | 2009-12-18 | Commissariat Energie Atomique | Procede de fabrication d'une structure micro-electronique impliquant un collage moleculaire |
FR2925221B1 (fr) * | 2007-12-17 | 2010-02-19 | Commissariat Energie Atomique | Procede de transfert d'une couche mince |
US8330126B2 (en) * | 2008-08-25 | 2012-12-11 | Silicon Genesis Corporation | Race track configuration and method for wafering silicon solar substrates |
US8329557B2 (en) * | 2009-05-13 | 2012-12-11 | Silicon Genesis Corporation | Techniques for forming thin films by implantation with reduced channeling |
FR2947098A1 (fr) * | 2009-06-18 | 2010-12-24 | Commissariat Energie Atomique | Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3415985A (en) * | 1962-11-28 | 1968-12-10 | Centre Nat Rech Scient | Ionic microanalyzer wherein secondary ions are emitted from a sample surface upon bombardment by neutral atoms |
NL7306378A (fr) * | 1973-05-08 | 1974-11-12 | ||
NL7317436A (nl) * | 1973-12-20 | 1975-06-24 | Philips Nv | Inrichting voor massa-analyse en structuur-analyse van een oppervlaklaag door middel van ionenver- strooiing. |
US3916190A (en) * | 1974-03-01 | 1975-10-28 | Minnesota Mining & Mfg | Depth profile analysis apparatus |
US4088895A (en) * | 1977-07-08 | 1978-05-09 | Martin Frederick Wight | Memory device utilizing ion beam readout |
DE3128814A1 (de) * | 1981-07-21 | 1983-02-10 | Siemens AG, 1000 Berlin und 8000 München | Elektrisch leitende probenhalterung fuer die analysentechnik der sekundaerionen-massenspektrometrie |
EP0175807B1 (fr) * | 1984-09-27 | 1988-12-07 | Leybold Aktiengesellschaft | Appareil pour la spectrométrie de masse de particules neutres pulvérisées |
US4633084A (en) * | 1985-01-16 | 1986-12-30 | The United States Of America As Represented By The United States Department Of Energy | High efficiency direct detection of ions from resonance ionization of sputtered atoms |
IE58049B1 (en) * | 1985-05-21 | 1993-06-16 | Tekscan Ltd | Surface analysis microscopy apparatus |
JPH0739987B2 (ja) * | 1988-06-28 | 1995-05-01 | 川崎製鉄株式会社 | 皮膜の厚みと組成の同時測定方法 |
-
1988
- 1988-02-05 DE DE3803424A patent/DE3803424C2/de not_active Expired - Fee Related
- 1988-12-28 FR FR888817317A patent/FR2626976B1/fr not_active Expired - Fee Related
- 1988-12-30 IT IT8823166A patent/IT1230178B/it active
-
1989
- 1989-01-31 GB GB8902064A patent/GB2215909B/en not_active Expired - Lifetime
- 1989-02-02 US US07/305,693 patent/US4982090A/en not_active Expired - Lifetime
- 1989-02-06 JP JP1025956A patent/JP2740231B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
GB2215909B (en) | 1992-09-16 |
DE3803424C2 (de) | 1995-05-18 |
DE3803424A1 (de) | 1989-08-17 |
FR2626976A1 (fr) | 1989-08-11 |
GB2215909A (en) | 1989-09-27 |
US4982090A (en) | 1991-01-01 |
JP2740231B2 (ja) | 1998-04-15 |
JPH01217249A (ja) | 1989-08-30 |
IT8823166A0 (it) | 1988-12-30 |
IT1230178B (it) | 1991-10-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |