FR2618945A1 - LINK FOR USE IN A SEMICONDUCTOR DEVICE - Google Patents
LINK FOR USE IN A SEMICONDUCTOR DEVICE Download PDFInfo
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- FR2618945A1 FR2618945A1 FR8710843A FR8710843A FR2618945A1 FR 2618945 A1 FR2618945 A1 FR 2618945A1 FR 8710843 A FR8710843 A FR 8710843A FR 8710843 A FR8710843 A FR 8710843A FR 2618945 A1 FR2618945 A1 FR 2618945A1
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- weight
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- gold
- barium
- connecting wire
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/02—Alloys based on gold
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H01L2924/01012—Magnesium [Mg]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01019—Potassium [K]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01022—Titanium [Ti]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01027—Cobalt [Co]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01047—Silver [Ag]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01056—Barium [Ba]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01058—Cerium [Ce]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/012—Semiconductor purity grades
- H01L2924/01204—4N purity grades, i.e. 99.99%
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/012—Semiconductor purity grades
- H01L2924/01205—5N purity grades, i.e. 99.999%
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
- H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12431—Foil or filament smaller than 6 mils
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12528—Semiconductor component
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
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- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Wire Bonding (AREA)
- Conductive Materials (AREA)
Abstract
L'invention concerne un fil de liaison destiné à être utilisé dans des dispositifs semi-conducteurs, lequel est constitué essentiellement de baryum à raison de 0,0003 à 0,01 % en poids et d'or pour le reste, la pureté de l'or dudit fil de liaison étant d'au moins 99,99 %. Le fil de liaison peut contenir en outre au moins un élément choisi dans le groupe constitué par l'aluminium à raison de 0,0005 à 0,005 % en poids, le calcium à raison de 0,0001 à 0,003 % en poids, l'argent à raison de 0,0005 à 0,005 % en poids, et le palladium à raison de 0,0005 à 0,005 % en poids. Les éléments et le baryum ont une teneur totale qui ne doit pas dépasser 0,01 % en poids, sur la base du poids du fil de liaison, si bien que la pureté de l'or du fil de liaison est d'au moins 99,99 %. Le fil de liaison ainsi réalisé convient pour le soudage automatique à grande vitesse.The invention relates to a connecting wire intended for use in semiconductor devices, which consists essentially of barium at a rate of 0.0003 to 0.01% by weight and gold for the rest, the purity of the 'Gold of said connecting wire being at least 99.99%. The connecting wire can also contain at least one element chosen from the group consisting of aluminum at a rate of 0.0005 to 0.005% by weight, calcium at a rate of 0.0001 to 0.003% by weight, silver from 0.0005 to 0.005% by weight, and palladium from 0.0005 to 0.005% by weight. The elements and the barium have a total content which must not exceed 0.01% by weight, based on the weight of the connecting wire, so that the purity of the gold of the connecting wire is at least 99 , 99%. The bonding wire thus produced is suitable for high speed automatic welding.
Description
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La présente invention concerne un fil de liaison destiné à être utilisé dans un dispositif semi-conducteur, en particulier pour la connexion entre un élément semi-conducteur et The present invention relates to a connecting wire intended to be used in a semiconductor device, in particular for the connection between a semiconductor element and
un fil conducteur externe.an external lead wire.
Comme procédé permettant de connecter électriquement une électrode d'un élément semi-conducteur et un fil conducteur externe, on a jusqu'ici largement pratiqué un procédé de liaison, ou soudage, de fil utilisant un très fin fil d'or, d'aluminium, etc., d'un diamètre de l'ordre de plusieurs microns à plusieurs dizaines de microns. En particulier, on a employé le plus couramment un fil d'or de pureté élevée,ayant une pureté de l'ordre de 99,99 %,dans ce procédé de liaison en raison de son excellente résistance à la corrosion, de ses possibilités d'extension et de la soudabilité du fil. Ce procédé de liaison, ou soudage, de fil utilisant un tel fil d'or a ordinairement été effectué à l'aide d'un processus de soudage par thermocompression. Dans le procédé de soudage par thermocompression, on coupe le fil d'or à l'aide d'un moyen électrique ou en le faisant fondre avec une flamme d'hydrogène afin de former une partie en forme de bille à l'extrémité du fil d'or, on connecte la partie As a method for electrically connecting an electrode of a semiconductor element and an external conductive wire, a method of bonding, or welding, of wire using a very fine gold or aluminum wire has hitherto been widely practiced. , etc., with a diameter on the order of several microns to several tens of microns. In particular, a gold wire of high purity, having a purity of the order of 99.99%, has most commonly been used in this bonding process because of its excellent resistance to corrosion, its possibilities of extension and solderability of the wire. This method of bonding, or welding, wire using such a gold wire has usually been carried out using a thermocompression welding process. In the thermocompression welding process, the gold wire is cut using an electric means or by melting it with a hydrogen flame in order to form a ball-shaped part at the end of the wire. gold, we connect the part
en forme de bille ainsi produite à une électrode d'un élément semi- in the form of a ball thus produced at an electrode of a semi-element
conducteur par thermocompression, puis on connecte l'autre partie conductor by thermocompression, then we connect the other part
terminale du fil d'or à un fil conducteur externe par thermocompres- end of the gold wire to an external conducting wire by thermocompres-
sion. On effectue ces étapes successives dans des conditions de tem- if we. These successive stages are carried out under time conditions.
pérature élevéesde 100 à 300 C.high temperatures from 100 to 300 C.
Récemment, des tentatives ont été faites pour obtenir Recently attempts have been made to obtain
une opération de soudage automatique à grande vitesse. Toutefois, - a high speed automatic welding operation. However -
lorsque l'on utilise un fil d'or pur classique dans le processus de when using a classic pure gold thread in the process of
soudage à grande vitesse, celui-ci subit des ruptures ou des ramol- high speed welding, it undergoes ruptures or softening
lissements à la chaleur produite pendant l'opération, ce qui le rend inutilisable. Ainsi, il existe une forte demande pour des fils de the heat produced during the operation, which makes it unusable. So there is a high demand for yarns of
liaison d'une plus grande fiabilité, les améliorations portant notam- improved reliability, improvements including
ment sur les propriétés suivantes. on the following properties.
(1) Ils ont une forte résistance mécanique, en particu- (1) They have strong mechanical strength, in particular
lier une résistance à la traction suffisamment élevée aux températures élevées, de sorte qu'ils ne subissent link a sufficiently high tensile strength at high temperatures, so that they do not undergo
pas de cassures pendant le processus de soudage. no breaks during the welding process.
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(2) Une boucLe de fil de liaison connectant une électrode d'un élément semi-conducteur et un fil conducteur (2) A loop of connecting wire connecting an electrode of a semiconductor element and a conducting wire
externe ne s'affaisse pas sous l'effet du ramollis- external does not collapse under the effect of softening
sement dû à la chaleur.due to heat.
(3) Ils ne subissent pas de déformations par ramollisse- ment pendant l'opération de moulage à l'aide d'une résine. (4) La forme de la bille formée à l'extrémité du fil est (3) They do not undergo softening deformation during the resin molding operation. (4) The shape of the ball formed at the end of the wire is
presque complètement sphérique et possède une dimen- almost completely spherical and has a dimension
sion uniforme, ce qui permet de minimiser la disper- uniform sion, which minimizes dispersion
sion des résistances mécaniques des soudures. the mechanical resistance of the welds.
Jusqu'ici, de nombreuses tentatives ont été faites par addition de divers éléments au fil d'or de grande pureté dans le but d'améliorer les propriétés ci-dessus indiquées. Par exemple, les brevets japonais publiés n 57-34 659 et 58-26 662 indiquent qu'on peut améliorer la résistance mécanique en ajoutant une très petite quantité de calcium ou de bérylium. En outre, l'utilisation de nombreux autres additifs, tels que platine, palladium, argent, To date, numerous attempts have been made by adding various elements to high purity gold thread in order to improve the properties indicated above. For example, Japanese published patents 57-34,659 and 58-26,662 indicate that mechanical strength can be improved by adding a very small amount of calcium or berylium. In addition, the use of many other additives, such as platinum, palladium, silver,
titane, magnésium, etc., a été proposée. titanium, magnesium, etc. has been proposed.
Un but de l'invention est de découvrir un élément An object of the invention is to discover an element
permettant d'améliorer efficacement les propriétés ci-dessus indi- for effectively improving the above properties indi-
quées et, donc, de produire un fil de liaison qui possède une compo- and, therefore, to produce a bonding wire which has a compound
sition nouvelle, en particulier un fil de liaison d'or possédant une résistance élevée à la traction qui peut commodément être utilisé new sition, in particular a gold bonding wire having a high tensile strength which can conveniently be used
dans le soudage à grande vitesse.in high speed welding.
La demanderesse a mené diverses études dans divers domaines sur divers éléments et a découvert que l'adjonction de The Applicant has conducted various studies in various fields on various elements and has discovered that the addition of
baryum à l'or avait un effet considérable sur les propriétés envisa- barium with gold had a considerable effect on the properties envisaged
gées par l'invention. En outre, il a été découvert que, lorsque l'on ajoutait du baryum à l'or en même temps qu'un ou plusieurs éléments managed by the invention. In addition, it has been discovered that when barium is added to gold together with one or more elements
additifs sélectionnés dans le groupe formé par l'aluminium, le cal- additives selected from the group formed by aluminum, cal-
cium, l'argent et le palladium, des effets de coopération pouvaient cium, silver and palladium, cooperative effects could
être obtenus et on pouvait réduire la quantité ajoutée de baryum. be obtained and the added amount of barium could be reduced.
Selon l'invention, il est proposé un fil de liaison destiné à être utilisé dans des dispositifs semi-conducteurs, lequel est essentiellement constitué de 0,0003 à 0,01 %, en poids, de According to the invention, a connecting wire is proposed for use in semiconductor devices, which essentially consists of 0.0003 to 0.01%, by weight, of
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baryum, Le reste étant de l'or, et la pureté de L'or dudit fil de barium, the remainder being gold, and the purity of the gold of said wire
liaison étant d'au moins 99,99 %.bond being at least 99.99%.
Le fil de liaison selon l'invention peut en outre contenir au moins un des éléments choisis dans le groupe qui comprend l'aluminium à raison de 0,0005 à 0,005 % en poids, le calcium à raison de 0,0001 à 0,0b3 % en poids, l'argent à raison de 0,0005 à 0,005 % The connecting wire according to the invention may also contain at least one of the elements chosen from the group which comprises aluminum in an amount of 0.0005 to 0.005% by weight, calcium in an amount of 0.0001 to 0.0b3 % by weight, silver at a rate of 0.0005 to 0.005%
en poids, et le palladium à raison de 0,0005 à 0,005 % en poids. by weight, and palladium at a rate of 0.0005 to 0.005% by weight.
Dans ce cas, la quantité totale des éléments et du baryum ne doit pas dépasser 0,01 % en poids, sur la base du poids du fil d'or, si bien In this case, the total amount of elements and barium should not exceed 0.01% by weight, based on the weight of the gold thread, so
que la pureté de l'or du fil de liaison est d'au moins 99,99 %. that the purity of the gold in the connecting wire is at least 99.99%.
Le fil de liaison en or selon l'invention contenant du baryum, avec ou sans d'autres éléments d'addition, présente des propriétés nettement supérieures, en particulier une résistance mécanique accrue à température ambiante ou à température élevée, The gold connecting wire according to the invention containing barium, with or without other addition elements, has clearly superior properties, in particular an increased mechanical resistance at room temperature or at elevated temperature,
une bille et une boucle du fil pouvant être formées suivant des confi- a ball and a loop of the wire can be formed according to confi-
gurations uniformes et voulues. Ainsi, le fil de liaison est extrême- uniform and desired gurations. So the bonding wire is extreme-
ment fiable pour être utilisé dans la liaison, ou soudage, par un fil, d'éléments semi-conducteurs et conduit à un rendement élevé. Cette combinaison souhaitable des propriétés rend le fil particulièrement reliable to be used in the connection, or welding, by a wire, of semiconductor elements and leads to a high efficiency. This desirable combination of properties makes the yarn particularly
adapté au soudage à grande vitesse. suitable for high speed welding.
Le fil d'or contenant du baryum selon l'invention possède une résistance mécanique élevée à la fois à la température ambiante et aux températures élevées lorsqu'on le compare à un fil d'or pur classique ne contenant pas de baryum et il peut être soudé The gold wire containing barium according to the invention has a high mechanical resistance both at room temperature and at high temperatures when compared to a conventional pure gold wire containing no barium and it can be welded
de manière entièrement satisfaisante à des parties devant être connec- completely satisfactorily to parties to be connected
tées par une soudeuse à grande vitesse, sans qu'il soit provoqué des cassures du fil, un affaissement d'une boucle du fil de liaison et une déformation due au ramollissement. Puisque la bille formée à l'extrémité du fil d'or selon l'invention est sphérique et qu'on peut minimiser les défauts d'uniformité de dimension, il est possible ted by a high speed welder, without causing breakage of the wire, sagging of a loop of the connecting wire and deformation due to softening. Since the ball formed at the end of the gold wire according to the invention is spherical and it is possible to minimize the dimensional uniformity defects, it is possible
d'obtenir une fiabilité extrêmement élevée. En outre, dans le proces- obtain extremely high reliability. In addition, in the process
sus de fabrication du fil, on peut minimiser les cassures du fil pendant l'opération de tirage en raison de la forte résistance du fil, et on obtient de bonnes possibilités de traitement. En outre, lorsqu'un ou plusieurs additifs choisis parmi les éléments ci-dessus indiqués sont contenus dans le fil de liaison d'or, en plus du baryum, on peut obtenir les mêmes avantageuses propriétés avec une quantité réduite de baryum. En particulier, lorsque l'on ajoute de L'aluminium ou-du calcium en combinaison avec le baryum, la In addition to wire production, wire breakage can be minimized during the drawing operation due to the high resistance of the wire, and good processing possibilities are obtained. In addition, when one or more additives chosen from the elements indicated above are contained in the gold connecting wire, in addition to barium, the same advantageous properties can be obtained with a reduced amount of barium. In particular, when aluminum or calcium is added in combination with barium, the
quantité totale des additifs en tant qu'impuretés diminue notable- total amount of additives as impurities decreases noticeably-
ment en raison de l'effet synergique du baryum et de L'aluminium due to the synergistic effect of barium and aluminum
ou du calcium.or calcium.
Selon l'invention, la teneur en baryum dans le fil de liaison doit être comprise dans l'intervalle de 0,0003 à 0,01 % en poids. Lorsque la teneur en baryum est inférieure à 0,0003 % According to the invention, the barium content in the binding wire should be in the range of 0.0003 to 0.01% by weight. When the barium content is less than 0.0003%
en poids, les avantages ci-dessus cités sont obtenus avec peine. by weight, the advantages mentioned above are obtained with difficulty.
Inversement, puisqu' une teneur dépassant 0,01 % en poids conduit Conversely, since a content exceeding 0.01% by weight leads
à un accroissement non favorable de la résistivité et rend impos- to an unfavorable increase in resistivity and makes it
sible la formation d'une bille d'une forme sphérique précise, une telle teneur excessive n'est pas souhaitable. Lorsqu'on ajoute le baryum aux autres éléments d'addition, il faut ajuster la quantité totale de baryum et d'éléments d'addition de façon que celle-ci ne dépasse pas la limite supérieure de 0,01 % en poids. Lorsque la teneur en aluminium dépasse 0, 005 % en poids, il est impossible de former une bille sphérique à l'extrémité du fil et, en outre, les If the formation of a ball of a precise spherical shape is possible, such an excessive content is undesirable. When adding barium to the other additives, the total amount of barium and additives must be adjusted so that it does not exceed the upper limit of 0.01% by weight. When the aluminum content exceeds 0.005% by weight, it is impossible to form a spherical ball at the end of the wire and, moreover, the
propriétés d'étirage se détériorent. Lorsque les quantités de cal- stretching properties deteriorate. When the quantities of cal-
cium, d'argent et de palladium dépassent les limites supérieures respectives de 0,003 % en poids, 0,005 % en poids et 0,005 % en poids, les propriétés d'étirage s'altèrent si bien que de telles cium, silver and palladium exceed the respective upper limits of 0.003% by weight, 0.005% by weight and 0.005% by weight, the stretching properties deteriorate so that
quantités en excès ne sont pas souhaitables. excess amounts are not desirable.
En outre, il est essentiel, du point de vue de la fiabilité, que le fil de liaison en or selon l'invention ait finalement une pureté en or d'au moins 99,99 %. En d'autres termes, la teneur en or du fil de liaison doit être d'au moins 99,99 % en poids. Pour assurer les qualités souhaitées du fil de liaison d'or résultant, on préfère que l'or utilisé comme matériau de départ ait été affiné jusqu'à un degré de pureté d'au moins 99,999 % et que le baryum et, si nécessaire, d'autres éléments d'addition In addition, it is essential, from the point of view of reliability, that the gold connecting wire according to the invention finally have a gold purity of at least 99.99%. In other words, the gold content of the link wire should be at least 99.99% by weight. To ensure the desired qualities of the resulting gold bonding wire, it is preferred that the gold used as starting material has been refined to a degree of purity of at least 99.999% and that the barium and, if necessary, other elements of addition
soient ajoutés à cet or hautement purifié. are added to this highly purified gold.
Le fil de liaison selon l'invention peut être préparé par n'importe quel procédé connu à ce jour. Par exemple, on ajoute une quantité prédéterminée de baryum à l'or, avec ou sans les autres The connecting wire according to the invention can be prepared by any method known to date. For example, we add a predetermined amount of barium to gold, with or without the others
éléments d'addition, puis on en forme un fil d'un diamètre de plu- addition elements, and then we form a wire with a diameter of more
2618 9 4 52618 9 4 5
sieurs microns à plusieurs dizaines de microns par une succession several microns to several tens of microns by a succession
d'opérations de fusion, moulage, forgeage ou laminage, et étirage. operations of melting, molding, forging or rolling, and drawing.
On va décrire plus spécialement l'invention en We will more specifically describe the invention in
relation avec les exemples et exemples comparatifs suivants. relationship to the following examples and comparative examples.
EXEMPLE 1EXAMPLE 1
A de l'or d'une pureté d'au moins 99,999 %, on ajoute du baryum à raison de 0,0005 % en poids sur la base de la quantité totale d'or et de baryum, et on fond le mélange résultant. On coule le matériau fondu, on le forge et on l'étire en un fil de liaison To gold with a purity of at least 99.999%, barium is added in an amount of 0.0005% by weight based on the total amount of gold and barium, and the resulting mixture is melted. The molten material is poured, forged and stretched into a bonding wire
d'un diamètre de 25/um.with a diameter of 25 µm.
On traite thermiquement le fil ainsi obtenu, si bien que l'allongement à la rupture à température ambiante est de 4 %, puis on mesure sa résistance à la traction à la fois à température ambiante et après avoir placé le fil à 250 C pendant 25 s. Les résultats des mesures sont donnés en même temps que l'allongement The wire thus obtained is heat treated, so that the elongation at break at room temperature is 4%, then its tensile strength is measured both at room temperature and after having placed the wire at 250 ° C. for 25 s. The results of the measurements are given at the same time as the elongation
sur le Tableau ci-après.in the table below.
EXEMPLE 2 - 4EXAMPLE 2 - 4
On prépare d'autres fils de liaison suivant le procédé décrit dans l'Exemple 1, sauf que l'on ajoute le baryum à raison de, respectivement, 0,002 % en poids, 0,006 % en poids, et 0,001 % en poids, sur la base de la quantité totale d'or et de baryum. On mesure la résistance à la traction à température ambiante et à une température élevée (250 C) pour ces fils de liaison, de la même manière que dans l'Exemple 1, et les résultats sont présentés sur le Other connecting wires are prepared according to the method described in Example 1, except that the barium is added in an amount of 0.002% by weight, 0.006% by weight and 0.001% by weight, respectively, over the basis of the total amount of gold and barium. The tensile strength at room temperature and at an elevated temperature (250 ° C.) is measured for these connecting wires, in the same manner as in Example 1, and the results are presented on the
Tableau en même temps que les allongements. Table at the same time as the extensions.
EXEMPLES 5 - 13EXAMPLES 5 - 13
On a préparé des fils de liaison de la même manière que dans l'Exemple 1, sauf que l'on a ajouté du baryum et un ou plusieurs éléments d'addition supplémentaires suivant les quantités indiquées dans le Tableau, et on les a soumis aux mêmes mesures de résistance à la traction suivant l'Exemple 1. Les résultats sont Binding wires were prepared in the same manner as in Example 1, except that barium and one or more additional additives were added in the amounts indicated in the Table, and were subjected to the same tensile strength measurements according to Example 1. The results are
présentés en même temps que les allongements dans le Tableau. presented together with the elongations in the Table.
2618 9 452618 9 45
Les quantités des éléments d'addition sont toutes données sur la The quantities of the addition elements are all given on the
base du poids total de l'or et des éléments d'addition. basis of the total weight of the gold and the elements of addition.
En plus d'une forte résistance à la traction; les fils de liaison obtenus dans les Exemples 1 à 13 présentent tous des résultats extrêmement bons en ce qui concerne la formation d'une bille sphérique et la forme d'une boucle produite pendant le In addition to a high tensile strength; the connecting wires obtained in Examples 1 to 13 all show extremely good results as regards the formation of a spherical ball and the shape of a loop produced during the
processus de soudage.welding process.
EXEMPLES COMPARATIFSCOMPARATIVE EXAMPLES
A-titre de comparaison, on a effectué les mêmes mesures sur un fil d'or pur classique d'une pureté d'au moins 99,99 %, d'un diamètre de 25jum, ne contenant pas de baryum, les résultats By way of comparison, the same measurements were made on a conventional pure gold wire with a purity of at least 99.99%, with a diameter of 25 μm, containing no barium, the results
étant présentés sur le Tableau.being presented on the Table.
Les puretés de l'or des fils de liaison sont également The purities of the gold of the connecting wires are also
indiquées dans le Tableau.indicated in the Table.
Sur le Tableau, il apparaît clairement que le fil de liaison selon l'invention présente de fortes améliorations de sa résistance mécanique tout en assurant des niveaux d'allongement In the Table, it clearly appears that the connecting wire according to the invention has strong improvements in its mechanical strength while ensuring levels of elongation
voulus à la fois à température ambiante et à une température élevée. desired both at room temperature and at a high temperature.
Bien entendu, l'homme de l'art sera en mesure Of course, those skilled in the art will be able
d'imaginer, à partir du fil de liaison dont la description vient to imagine, from the connecting thread whose description comes
d'être donnée à titre simplement illustratif et nullement limitatif, diverses variantes et modifications ne sortant pas du cadre de l'invention. to be given by way of illustration only and in no way limiting, various variants and modifications not departing from the scope of the invention.
TABLEAUBOARD
Exemple Pureté de Quantité d'additif (% pondéraI) Température ambiante 250 C Example Purity of quantity of additive (% by weight) Ambient temperature 250 C
l'or Baryum Aluminium Calcium Argent Palladium Résistance AllongeRésistance Allonge- Gold Barium Aluminum Calcium Silver Palladium Elongation Resistance Elongation Resistance-
(%) à la traction ment à la traction ment (g) (%) (g) (%) (%) tensile tensile (g) (%) (g) (%)
> 99,99 0,0005 - - - - 6,5 4,0 4,0 3,0 > 99.99 0.0005 - - - - 6.5 4.0 4.0 3.0
2 > 99,99 0,002 - - - - 8,0 4,0 5,0 2,8 2> 99.99 0.002 - - - - 8.0 4.0 5.0 2.8
3 > 99,99 0,006 - - - - 10,0 4,0 8,0 2,4 3> 99.99 0.006 - - - - 10.0 4.0 8.0 2.4
4 > 99,99 0,01 - - - - 11,0 4,0 8,2 2,0 4> 99.99 0.01 - - - - 11.0 4.0 8.2 2.0
> 99,99 0,005 0,002 - - - 10,7 4,0 8,0 2,4 > 99.99 0.005 0.002 - - - 10.7 4.0 8.0 2.4
6 > 99,99 0,005 - 0,0003 - - 10,0 4,0 7,5 3,2 6> 99.99 0.005 - 0.0003 - - 10.0 4.0 7.5 3.2
7 > 99,99 0,005 - - 0,002 - 8,0 4,0 6,0 2,0 7> 99.99 0.005 - - 0.002 - 8.0 4.0 6.0 2.0
8 > 99,99 0,005 - - - 0,002 8,2 4,0 6,5 2,5 8> 99.99 0.005 - - - 0.002 8.2 4.0 6.5 2.5
9 > 99,99 0,003 0,002 0,0003 - - 11,5 4,0 11,5 2,9 9> 99.99 0.003 0.002 0.0003 - - 11.5 4.0 11.5 2.9
> 99,99 0,003 0,0009 0,0003 - - 11,2 4,0 8,7 3,4 > 99.99 0.003 0.0009 0.0003 - - 11.2 4.0 8.7 3.4
il > 99,99 0,002 0,0009 0,0003 - - 11,0 4,0 8,2 3,7 il> 99.99 0.002 0.0009 0.0003 - - 11.0 4.0 8.2 3.7
12 > 99,99 0,002 - 0,001 - - 11,8 4,0 11,0 3,2 12> 99.99 0.002 - 0.001 - - 11.8 4.0 11.0 3.2
13 > 99,99 0,0015 0,0009 0,0003 - - 10,8 4,0 7,9 3,4 13> 99.99 0.0015 0.0009 0.0003 - - 10.8 4.0 7.9 3.4
Exemple comparatifComparative example
1 > 99,99 - - - - - 6,0 4,0 3,0 6,01> 99.99 - - - - - 6.0 4.0 3.0 6.0
Co oCo o
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61120790A JPS62278241A (en) | 1986-05-26 | 1986-05-26 | Bonding wire |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2618945A1 true FR2618945A1 (en) | 1989-02-03 |
| FR2618945B1 FR2618945B1 (en) | 1989-12-15 |
Family
ID=14795062
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR878710843A Expired FR2618945B1 (en) | 1986-05-26 | 1987-07-30 | LINK FOR USE IN A SEMICONDUCTOR DEVICE |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4752442A (en) |
| JP (1) | JPS62278241A (en) |
| FR (1) | FR2618945B1 (en) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4993622A (en) * | 1987-04-28 | 1991-02-19 | Texas Instruments Incorporated | Semiconductor integrated circuit chip interconnections and methods |
| GB2231336B (en) * | 1989-04-28 | 1993-09-22 | Tanaka Electronics Ind | Gold wire for the bonding of a semiconductor device |
| US5091188A (en) * | 1990-04-26 | 1992-02-25 | Haynes Duncan H | Phospholipid-coated microcrystals: injectable formulations of water-insoluble drugs |
| US5246707A (en) * | 1990-04-26 | 1993-09-21 | Haynes Duncan H | Sustained release delivery of water-soluble bio-molecules and drugs using phospholipid-coated microcrystals, microdroplets and high-concentration liposomes |
| US5364706A (en) * | 1990-07-20 | 1994-11-15 | Tanaka Denshi Kogyo Kabushiki Kaisha | Clad bonding wire for semiconductor device |
| DE19544641B4 (en) * | 1994-12-05 | 2005-08-25 | Eads Deutschland Gmbh | Solar Cell Connectors for Space Solar Generators |
| US7255877B2 (en) | 1996-08-22 | 2007-08-14 | Jagotec Ag | Fenofibrate microparticles |
| JP3126926B2 (en) * | 1996-09-09 | 2001-01-22 | 新日本製鐵株式会社 | Gold alloy fine wire for semiconductor element and semiconductor device |
| WO1999040906A2 (en) * | 1998-02-11 | 1999-08-19 | Research Triangle Pharmaceuticals | Method and composition for treatment of inflammatory conditions |
| US5993735A (en) * | 1998-05-29 | 1999-11-30 | Kang; Do-Won | Gold-based alloy for bonding wire of semiconductor device |
| US6610930B1 (en) * | 1998-09-16 | 2003-08-26 | Kulicke & Soffa Investments, Inc. | Composite noble metal wire |
| US6933468B2 (en) | 2000-10-10 | 2005-08-23 | Hobart Brothers Company | Aluminum metal-core weld wire and method for forming the same |
| JP4195495B1 (en) * | 2007-11-06 | 2008-12-10 | 田中電子工業株式会社 | Gold alloy wire for ball bonding |
| US8387238B2 (en) * | 2009-06-14 | 2013-03-05 | Jayna Sheats | Processes and structures for IC fabrication |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2803949A1 (en) * | 1978-01-30 | 1979-08-02 | Int Gold Corp Ltd | Gold alloys for jewellery etc. - having very fine grain size obtd. by adding barium and/or zirconium |
| GB2063913A (en) * | 1979-11-28 | 1981-06-10 | Tanaka Electronics Ind | Gold wire |
| JPS56122140A (en) * | 1980-02-29 | 1981-09-25 | Tanaka Denshi Kogyo Kk | Gold wire for bonding semiconductor element and semiconductor element |
| FR2517885A1 (en) * | 1981-12-04 | 1983-06-10 | Mitsubishi Metal Corp | END GOLD ALLOY WIRE FOR CONNECTING A SEMICONDUCTOR DEVICE |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5282183A (en) * | 1975-12-29 | 1977-07-09 | Nec Corp | Connecting wires for semiconductor devices |
| DE2733493C2 (en) * | 1976-05-17 | 1986-11-13 | Henkel KGaA, 4000 Düsseldorf | Smoothing agent for textile fiber material |
| JPS53105968A (en) * | 1977-02-26 | 1978-09-14 | Tanaka Electronics Ind | Gold wire for bonding semiconductor |
| JPS53112060A (en) * | 1977-03-11 | 1978-09-30 | Tanaka Electronics Ind | Gold wire for bonding semiconductor |
| JPS5734659A (en) * | 1980-08-07 | 1982-02-25 | Hitachi Maxell Ltd | Manufacture of granular positive mixture |
| JPS5826662A (en) * | 1981-08-11 | 1983-02-17 | Toyota Motor Corp | Method of controlling vehicle anti-skid unit upon trouble thereof |
| JPS6222448A (en) * | 1985-07-22 | 1987-01-30 | Nippon Kogaku Kk <Nikon> | Wafer to which ic is formed |
-
1986
- 1986-05-26 JP JP61120790A patent/JPS62278241A/en active Granted
-
1987
- 1987-07-16 US US07/074,421 patent/US4752442A/en not_active Expired - Lifetime
- 1987-07-30 FR FR878710843A patent/FR2618945B1/en not_active Expired
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2803949A1 (en) * | 1978-01-30 | 1979-08-02 | Int Gold Corp Ltd | Gold alloys for jewellery etc. - having very fine grain size obtd. by adding barium and/or zirconium |
| GB2063913A (en) * | 1979-11-28 | 1981-06-10 | Tanaka Electronics Ind | Gold wire |
| JPS56122140A (en) * | 1980-02-29 | 1981-09-25 | Tanaka Denshi Kogyo Kk | Gold wire for bonding semiconductor element and semiconductor element |
| FR2517885A1 (en) * | 1981-12-04 | 1983-06-10 | Mitsubishi Metal Corp | END GOLD ALLOY WIRE FOR CONNECTING A SEMICONDUCTOR DEVICE |
Non-Patent Citations (2)
| Title |
|---|
| METALLWISSENSCHAFT UND TECHNIK, vol. 34, no. 7, juillet 1980, pages 629-633; D. OTT et al.: "Einfluss kleiner Zus{tze auf die Eigenschaften von Gold und Goldlegierungen - Teil I: Gold" * |
| PATENT ABSTRACTS OF JAPAN, vol. 5, no. 198 (E-87)[870], 16 décembre 1981; & JP-A-56 122 140 (TANAKA DENSHI KOGYO K.K.) 25-09-1981 * |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2618945B1 (en) | 1989-12-15 |
| US4752442A (en) | 1988-06-21 |
| JPS62278241A (en) | 1987-12-03 |
| JPH0555579B2 (en) | 1993-08-17 |
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