FR2604299B1 - BIPOLAR TRANSISTOR COMPRISING A MULTI-LAYER TRANSMITTER PROVIDING THE CONTAINMENT OF THE HOLES - Google Patents

BIPOLAR TRANSISTOR COMPRISING A MULTI-LAYER TRANSMITTER PROVIDING THE CONTAINMENT OF THE HOLES

Info

Publication number
FR2604299B1
FR2604299B1 FR8613268A FR8613268A FR2604299B1 FR 2604299 B1 FR2604299 B1 FR 2604299B1 FR 8613268 A FR8613268 A FR 8613268A FR 8613268 A FR8613268 A FR 8613268A FR 2604299 B1 FR2604299 B1 FR 2604299B1
Authority
FR
France
Prior art keywords
containment
holes
bipolar transistor
layer transmitter
transmitter providing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR8613268A
Other languages
French (fr)
Other versions
FR2604299A1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to FR8613268A priority Critical patent/FR2604299B1/en
Publication of FR2604299A1 publication Critical patent/FR2604299A1/en
Application granted granted Critical
Publication of FR2604299B1 publication Critical patent/FR2604299B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H01L29/151—Compositional structures
    • H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
    • H01L29/155—Comprising only semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H01L29/7376—Resonant tunnelling transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
FR8613268A 1986-09-23 1986-09-23 BIPOLAR TRANSISTOR COMPRISING A MULTI-LAYER TRANSMITTER PROVIDING THE CONTAINMENT OF THE HOLES Expired - Lifetime FR2604299B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8613268A FR2604299B1 (en) 1986-09-23 1986-09-23 BIPOLAR TRANSISTOR COMPRISING A MULTI-LAYER TRANSMITTER PROVIDING THE CONTAINMENT OF THE HOLES

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8613268A FR2604299B1 (en) 1986-09-23 1986-09-23 BIPOLAR TRANSISTOR COMPRISING A MULTI-LAYER TRANSMITTER PROVIDING THE CONTAINMENT OF THE HOLES

Publications (2)

Publication Number Publication Date
FR2604299A1 FR2604299A1 (en) 1988-03-25
FR2604299B1 true FR2604299B1 (en) 1992-02-07

Family

ID=9339183

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8613268A Expired - Lifetime FR2604299B1 (en) 1986-09-23 1986-09-23 BIPOLAR TRANSISTOR COMPRISING A MULTI-LAYER TRANSMITTER PROVIDING THE CONTAINMENT OF THE HOLES

Country Status (1)

Country Link
FR (1) FR2604299B1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63140570A (en) * 1986-12-03 1988-06-13 Hitachi Ltd Semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2436502A1 (en) * 1978-09-12 1980-04-11 Ankri David Plane structure hetero-junction bipolar transistor - is esp. for HF types and has doped emitter definition zone
JPH0665216B2 (en) * 1981-12-28 1994-08-22 日本電気株式会社 Semiconductor device
JPS6158268A (en) * 1984-08-30 1986-03-25 Fujitsu Ltd High speed semiconductor d4evice

Also Published As

Publication number Publication date
FR2604299A1 (en) 1988-03-25

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Legal Events

Date Code Title Description
TP Transmission of property
TP Transmission of property
ST Notification of lapse