FR2603415A1 - Circuit de sortie d'un dispositif de charge couplee - Google Patents

Circuit de sortie d'un dispositif de charge couplee

Info

Publication number
FR2603415A1
FR2603415A1 FR8711120A FR8711120A FR2603415A1 FR 2603415 A1 FR2603415 A1 FR 2603415A1 FR 8711120 A FR8711120 A FR 8711120A FR 8711120 A FR8711120 A FR 8711120A FR 2603415 A1 FR2603415 A1 FR 2603415A1
Authority
FR
France
Prior art keywords
output circuit
charging device
transistor
receive
coupled charging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8711120A
Other languages
English (en)
Other versions
FR2603415B1 (fr
Inventor
Masafumi Kimata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2603415A1 publication Critical patent/FR2603415A1/fr
Application granted granted Critical
Publication of FR2603415B1 publication Critical patent/FR2603415B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage

Landscapes

  • Charge And Discharge Circuits For Batteries Or The Like (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

UN CIRCUIT DE SORTIE D'UN DISPOSITIF DE CHARGE COUPLEE COMPREND UN TRANSISTOR 4, 5, 6 AYANT UNE DIFFUSION FLOTTANTE 5 PREVUE POUR RECEVOIR UNE SERIE DE CHARGES DE SIGNAL DE LA SECTION DE TRANSFERT DE CHARGE. CHAQUE CHARGE DE SIGNAL EST TRANSFEREE A LA DIFFUSION FLOTTANTE EN SYNCHRONISME AVEC UNE HORLOGE D'ENTRAINEMENT APPLIQUEE A LA SECTION DE TRANSFERT DE CHARGE. LE TRANSISTOR A UNE ELECTRODE PORTE 4 CONNECTEE POUR RECEVOIR UNE HORLOGE R DE RETABLISSEMENT APPLIQUEE SUR UN INTERVALLE PLUS LONG QUE LA PERIODE DE L'HORLOGE D'ENTRAINEMENT.
FR8711120A 1986-08-29 1987-08-05 Circuit de sortie d'un dispositif de charge couplee Expired - Fee Related FR2603415B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61204498A JPS6358968A (ja) 1986-08-29 1986-08-29 電荷結合素子

Publications (2)

Publication Number Publication Date
FR2603415A1 true FR2603415A1 (fr) 1988-03-04
FR2603415B1 FR2603415B1 (fr) 1993-10-08

Family

ID=16491524

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8711120A Expired - Fee Related FR2603415B1 (fr) 1986-08-29 1987-08-05 Circuit de sortie d'un dispositif de charge couplee

Country Status (3)

Country Link
US (1) US4803709A (fr)
JP (1) JPS6358968A (fr)
FR (1) FR2603415B1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH084137B2 (ja) * 1988-01-12 1996-01-17 日本電気株式会社 電荷転送装置の出力回路
JPH0771235B2 (ja) * 1989-01-10 1995-07-31 三菱電機株式会社 電荷検出回路の駆動方法
US5349303A (en) * 1993-07-02 1994-09-20 Cirque Corporation Electrical charge transfer apparatus
US6128039A (en) * 1999-01-11 2000-10-03 Omnivision Technologies, Inc. Column amplifier for high fixed pattern noise reduction
US6730863B1 (en) 1999-06-22 2004-05-04 Cirque Corporation Touchpad having increased noise rejection, decreased moisture sensitivity, and improved tracking
US6532574B1 (en) * 2000-08-17 2003-03-11 International Business Machines Corporation Post-manufacture signal delay adjustment to solve noise-induced delay variations
US8508638B2 (en) * 2005-03-14 2013-08-13 Intellectual Ventures Ii Llc 3T pixel for CMOS image sensors with low reset noise and low dark current generation utilizing parametric reset

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3999171A (en) * 1975-11-17 1976-12-21 Texas Instruments Incorporated Analog signal storage using recirculating CCD shift register with loss compensation
US4309624A (en) * 1979-07-03 1982-01-05 Texas Instruments Incorporated Floating gate amplifier method of operation for noise minimization in charge coupled devices
EP0074150A2 (fr) * 1981-09-08 1983-03-16 Koninklijke Philips Electronics N.V. Détection d'information binaire d'un dispositif de transfer de charge
US4499497A (en) * 1982-12-27 1985-02-12 Rca Corporation CCD Imager with improved low light level response

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USB299480I5 (fr) * 1972-10-20
US4454435A (en) * 1981-08-07 1984-06-12 Hewlett-Packard Company CCD Amplifier using second correlated sampling and negative feedback for noise reduction
JPS58103172A (ja) * 1981-12-16 1983-06-20 Nec Corp 電荷転送装置
US4556851A (en) * 1983-08-22 1985-12-03 Rca Corporation Reduction of noise in signal from charge transfer devices
JPS6086980A (ja) * 1983-10-18 1985-05-16 Toshiba Corp 固体撮像装置
JPS6086981A (ja) * 1983-10-18 1985-05-16 Toshiba Corp 固体撮像装置
US4608606A (en) * 1984-03-15 1986-08-26 Rca Corporation CCD floating-element output stages providing low reset noise with single sampling
JPH0669049B2 (ja) * 1984-08-20 1994-08-31 株式会社東芝 Ｃｃｄ出力信号処理回路
US4661788A (en) * 1985-05-10 1987-04-28 Rca Corporation Tapped CCD delay line with non-destructive charge sensing using floating diffusions
JPS6265371A (ja) * 1985-09-17 1987-03-24 Matsushita Electronics Corp 電荷転送装置
NL8502860A (nl) * 1985-10-21 1987-05-18 Philips Nv Besturingswerkwijze voor een geintegreerd circuit uitgevoerd met een gemeenschappelijke schakelelektrode voor ten minste twee tegengesteld schakelbare transistoren, en daartoe geschikte inrichting.
US4689808A (en) * 1986-01-31 1987-08-25 Rca Corporation Low noise signal detection for a charge transfer device by quadrature phasing of information and reset noise signals
US4644287A (en) * 1986-03-10 1987-02-17 Rca Corporation Low noise synchronous detection for a charge transfer device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3999171A (en) * 1975-11-17 1976-12-21 Texas Instruments Incorporated Analog signal storage using recirculating CCD shift register with loss compensation
US4309624A (en) * 1979-07-03 1982-01-05 Texas Instruments Incorporated Floating gate amplifier method of operation for noise minimization in charge coupled devices
EP0074150A2 (fr) * 1981-09-08 1983-03-16 Koninklijke Philips Electronics N.V. Détection d'information binaire d'un dispositif de transfer de charge
US4499497A (en) * 1982-12-27 1985-02-12 Rca Corporation CCD Imager with improved low light level response

Also Published As

Publication number Publication date
JPS6358968A (ja) 1988-03-14
FR2603415B1 (fr) 1993-10-08
US4803709A (en) 1989-02-07

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Legal Events

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D6 Patent endorsed licences of rights
ST Notification of lapse