FR2593642B1 - MATRIX INFRARED DETECTOR. - Google Patents
MATRIX INFRARED DETECTOR.Info
- Publication number
- FR2593642B1 FR2593642B1 FR8209263A FR8209263A FR2593642B1 FR 2593642 B1 FR2593642 B1 FR 2593642B1 FR 8209263 A FR8209263 A FR 8209263A FR 8209263 A FR8209263 A FR 8209263A FR 2593642 B1 FR2593642 B1 FR 2593642B1
- Authority
- FR
- France
- Prior art keywords
- infrared detector
- matrix infrared
- matrix
- detector
- infrared
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000011159 matrix material Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8209263A FR2593642B1 (en) | 1982-05-27 | 1982-05-27 | MATRIX INFRARED DETECTOR. |
GB838313092A GB8313092D0 (en) | 1982-05-27 | 1983-05-12 | Matrical infra-red detector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8209263A FR2593642B1 (en) | 1982-05-27 | 1982-05-27 | MATRIX INFRARED DETECTOR. |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2593642A1 FR2593642A1 (en) | 1987-07-31 |
FR2593642B1 true FR2593642B1 (en) | 1990-10-12 |
Family
ID=9274405
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8209263A Expired - Fee Related FR2593642B1 (en) | 1982-05-27 | 1982-05-27 | MATRIX INFRARED DETECTOR. |
Country Status (2)
Country | Link |
---|---|
FR (1) | FR2593642B1 (en) |
GB (1) | GB8313092D0 (en) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4061916A (en) * | 1976-11-01 | 1977-12-06 | The United States Of America As Represented By The Secretary Of The Army | Silicon-insulator-polysilicon infrared imaging device and method of making same |
FR2484705A1 (en) * | 1977-12-29 | 1981-12-18 | Thomson Csf | Solid state array of charge coupled device - includes photodetectors for producing two dimensional image, esp. from infrared incident light |
JPS5643773A (en) * | 1979-09-17 | 1981-04-22 | Mitsubishi Electric Corp | Semiconductor device for detection of light |
-
1982
- 1982-05-27 FR FR8209263A patent/FR2593642B1/en not_active Expired - Fee Related
-
1983
- 1983-05-12 GB GB838313092A patent/GB8313092D0/en active Pending
Also Published As
Publication number | Publication date |
---|---|
GB8313092D0 (en) | 1987-04-15 |
FR2593642A1 (en) | 1987-07-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CL | Concession to grant licences | ||
ST | Notification of lapse |