FR2593642B1 - MATRIX INFRARED DETECTOR. - Google Patents

MATRIX INFRARED DETECTOR.

Info

Publication number
FR2593642B1
FR2593642B1 FR8209263A FR8209263A FR2593642B1 FR 2593642 B1 FR2593642 B1 FR 2593642B1 FR 8209263 A FR8209263 A FR 8209263A FR 8209263 A FR8209263 A FR 8209263A FR 2593642 B1 FR2593642 B1 FR 2593642B1
Authority
FR
France
Prior art keywords
infrared detector
matrix infrared
matrix
detector
infrared
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR8209263A
Other languages
French (fr)
Other versions
FR2593642A1 (en
Inventor
Andre Gauthier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Societe Anonyme de Telecommunications SAT
Original Assignee
Societe Anonyme de Telecommunications SAT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Societe Anonyme de Telecommunications SAT filed Critical Societe Anonyme de Telecommunications SAT
Priority to FR8209263A priority Critical patent/FR2593642B1/en
Priority to GB838313092A priority patent/GB8313092D0/en
Publication of FR2593642A1 publication Critical patent/FR2593642A1/en
Application granted granted Critical
Publication of FR2593642B1 publication Critical patent/FR2593642B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1832Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers
    • H01L27/14649Infrared imagers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
FR8209263A 1982-05-27 1982-05-27 MATRIX INFRARED DETECTOR. Expired - Fee Related FR2593642B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR8209263A FR2593642B1 (en) 1982-05-27 1982-05-27 MATRIX INFRARED DETECTOR.
GB838313092A GB8313092D0 (en) 1982-05-27 1983-05-12 Matrical infra-red detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8209263A FR2593642B1 (en) 1982-05-27 1982-05-27 MATRIX INFRARED DETECTOR.

Publications (2)

Publication Number Publication Date
FR2593642A1 FR2593642A1 (en) 1987-07-31
FR2593642B1 true FR2593642B1 (en) 1990-10-12

Family

ID=9274405

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8209263A Expired - Fee Related FR2593642B1 (en) 1982-05-27 1982-05-27 MATRIX INFRARED DETECTOR.

Country Status (2)

Country Link
FR (1) FR2593642B1 (en)
GB (1) GB8313092D0 (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4061916A (en) * 1976-11-01 1977-12-06 The United States Of America As Represented By The Secretary Of The Army Silicon-insulator-polysilicon infrared imaging device and method of making same
FR2484705A1 (en) * 1977-12-29 1981-12-18 Thomson Csf Solid state array of charge coupled device - includes photodetectors for producing two dimensional image, esp. from infrared incident light
JPS5643773A (en) * 1979-09-17 1981-04-22 Mitsubishi Electric Corp Semiconductor device for detection of light

Also Published As

Publication number Publication date
GB8313092D0 (en) 1987-04-15
FR2593642A1 (en) 1987-07-31

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Legal Events

Date Code Title Description
CL Concession to grant licences
ST Notification of lapse